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Showing items 11-25 of 25 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:32:25Z |
High voltage characteristics of junctionless poly-silicon thin film transistors
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Cheng, Ya-Chi; Wu, Yung-Chun; Chen, Hung-Bin; Han, Ming-Hung; Lu, Nan-Heng; Su, Jun-Ji; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:32:24Z |
Temperature-dependent characteristics of junctionless bulk transistor
|
Han, Ming-Hung; Chen, Hung-Bin; Yen, Shiang-Shiou; Shao, Chi-Shen; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:32:05Z |
Characteristics of Gate-All-Around Junctionless Poly-Si TFTs With an Ultrathin Channel
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Chen, Hung-Bin; Chang, Chun-Yen; Lu, Nan-Heng; Wu, Jia-Jiun; Han, Ming-Hung; Cheng, Ya-Chi; Wu, Yung-Chun |
| 國立交通大學 |
2014-12-08T15:30:40Z |
Improving Breakdown Voltage of LDMOS Using a Novel Cost Effective Design
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Han, Ming-Hung; Chen, Hung-Bin; Chang, Chia-Jung; Tsai, Chi-Chong; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:30:35Z |
Device and Circuit Performance Estimation of Junctionless Bulk FinFETs
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Han, Ming-Hung; Chang, Chun-Yen; Chen, Hung-Bin; Cheng, Ya-Chi; Wu, Yung-Chun |
| 國立交通大學 |
2014-12-08T15:29:10Z |
Characteristic of p-Type Junctionless Gate-All-Around Nanowire Transistor and Sensitivity Analysis
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Han, Ming-Hung; Chang, Chun-Yen; Jhan, Yi-Ruei; Wu, Jia-Jiun; Chen, Hung-Bin; Cheng, Ya-Chi; Wu, Yung-Chun |
| 國立交通大學 |
2014-12-08T15:29:10Z |
Performance Comparison Between Bulk and SOI Junctionless Transistors
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Han, Ming-Hung; Chang, Chun-Yen; Chen, Hung-Bin; Wu, Jia-Jiun; Cheng, Ya-Chi; Wu, Yung-Chun |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Statistical Analysis of Metal Gate Workfunction Variability, Process Variation, and Random Dopant Fluctuation in Nano-CMOS Circuits
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Hwang, Chih-Hong; Li, Tien-Yeh; Han, Ming-Hung; Lee, Kuo-Fu; Cheng, Hui-Wen; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:23:18Z |
A Novel Cost Effective Double Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor Design for Improving Off-State Breakdown Voltage
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Han, Ming-Hung; Chen, Hung-Bin; Chang, Chia-Jung; Wu, Jia-Jiun; Chen, Wen-Chong; Tsai, Chi-Chong; Chang, Chun-Yen |
| 國立交通大學 |
2014-12-08T15:22:31Z |
Effect of Process Variation on 15-nm-Gate Stacked Multichannel Surrounding-Gate Field Effect Transistor
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Han, Ming-Hung; Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:13:32Z |
The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit
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Han, Ming-Hung; Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:13:07Z |
Statistical variability in FinFET devices with intrinsic parameter fluctuations
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Hwang, Chih-Hong; Li, Yiming; Han, Ming-Hung |
| 國立交通大學 |
2014-12-08T15:07:40Z |
Discrete-Dopant-Induced Power-Delay Characteristic Fluctuation in 16 nm Complementary Metal-Oxide-Semiconductor with High Dielectric Constant Material
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Han, Ming-Hung; Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:07:27Z |
Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies
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Li, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh; Han, Ming-Hung |
| 國立交通大學 |
2014-12-08T15:07:15Z |
Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuations
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Li, Yiming; Hwang, Chih-Hong; Han, Ming-Hung |
Showing items 11-25 of 25 (1 Page(s) Totally)
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