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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:58:33Z |
Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor
|
Chao, TS; Liaw, MC; Chu, CH; Chang, CY; Chien, CH; Hao, CP; Lei, TF |
| 國立交通大學 |
2014-12-08T15:02:21Z |
Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor
|
Chao, TS; Liaw, MC; Chu, CH; Chang, CY; Chien, CH; Hao, CP; Lei, TF |
| 國立交通大學 |
2014-12-08T15:01:56Z |
Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantation
|
Chao, TS; Chien, CH; Hao, CP; Liaw, MC; Chu, CH; Chang, CY; Lei, TF; Sun, WT; Hsu, CH |
Showing items 1-3 of 3 (1 Page(s) Totally)
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