| 臺大學術典藏 |
2018-09-10T07:41:17Z |
Effects of plasma conditions on the nitrogen incorporation behaviors in GaAsSbN grown by plasma-assisted gas-source molecular beam epitaxy
|
T. C. Ma;H. H. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:17Z |
Thermal quenching of the photoluminescence of InAsSb/InAsPSb multiple quantum wells
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C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:17Z |
Nitrogen atomic rearrangement in thermally annealed GaAsSbN
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Y. T. Lin,;T. C. Ma,;H. H. Lin,;J. D. Wu,;Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; J. D. Wu,; Y. S. Huang,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:17Z |
Ambient light sensor utilizing combination of filter layer and absorption layer to achieve similar sensitivity to the light as the human eye
|
H. H. Lin;T. C. Ma;Y. R. Lin;J. P. Wang;C. H. Huang; H. H. Lin; T. C. Ma; Y. R. Lin; J. P. Wang; C. H. Huang; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:16Z |
Photoluminescence of InAsSb/InAsPSb quantum well
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C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:16Z |
The analysis of precursor state in thermodynamic model fro the growth of GaAsSb/GaAs multiple quantum wells
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J. M. Lin,;L. C. Chou,;H. H. Lin; J. M. Lin,; L. C. Chou,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:16Z |
Molecular-beam epitaxy of mid-infrared InAsPSb/InAsSb heterostrucrures
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H. H. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:16Z |
A comparative study of GaAsSbN epilayers grown by gas-source molecular-beam epitaxy with different plasma nitrogen species
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Y. T. Lin;T. C. Ma;H. H. Lin; Y. T. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:15Z |
InAsSb/InAsPSb multiple quantum wells grown by molecular beam epitaxy
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C. J. Wu,;G. Tsai,;H. H. Lin,; C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:15Z |
Comparison of InGaPSb/GaAs and InGaP/GaAs HBTs grown by MOCVD
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Y. C. Chin;H. H. Lin;C. H. Huang;M. N. Tseng; Y. C. Chin; H. H. Lin; C. H. Huang; M. N. Tseng; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Growth and characterization of InAsN on InAs substrate by using RF plasma assisted gas source molecular beam epitaxy
|
J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Studies on the photoluminescence of thermal annealed InAs(N)/InGaAs quantum wells
|
G. R. Chen,; J. S. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Light emission and detection by metal oxide silicon tunneling diodes
|
C. W. Liu,; M. H. Lee,; C. F. Lin,; I. C. Lin,; W. T. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Characterization of a nitrogen radio-frequency plasma source for growing dilute nitride GaAsSbN
|
T. C. Ma;H. H. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:14Z |
Comparision of annealing effects on the electrical and optical properties of GaAsN, GaAsSb, and GaAsSbN
|
Y. T. Lin;T. C. Ma;S. P. Wang;H. H. Lin; Y. T. Lin; T. C. Ma; S. P. Wang; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:13Z |
Band alignment of InAs1-xSbx (0.05 < x < 0.13)/ InAs0.67P0.23Sb0.10 heterostructures
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C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:13Z |
Effects of annealing on the electrical and optical properties of dilute nitride GaAsSbN
|
S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:13Z |
InAsN/InGaAsP multiple quantum wells on InP substrates grown by gas source molecular beam epitaxy
|
J. S. Wang,; G. R. Chen,; L. W. Sung,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
Above-barrier states in GaAs-AlGaAs superlattices studied by photoconductivity and photoreflectance
|
J. C. Fan; Y. F. Chen; D. Y. Lin; Y. S. Huang; M. C. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy
|
K. T. Tsen; D. K. Ferry; J. S. Wang; C. S. Huang; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
|
Y. R. Lin,;Y. F. Lai,;C. P. Liu,;H. H. Lin,; Y. R. Lin,; Y. F. Lai,; C. P. Liu,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy,
|
H. P. Hsu,;Y. N. Huang,;Y. S. Huang,;Y. T. Lin,;T. C. Ma,;H. H. Lin,;K. K. Tiong,;P. Sitarek,;J. Misiewicz,; H. P. Hsu,; Y. N. Huang,; Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; K. K. Tiong,; P. Sitarek,; J. Misiewicz,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer
|
Y. R. Lin, H. H. Lin,;J. H. Chu; Y. R. Lin, H. H. Lin,; J. H. Chu; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:12Z |
Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures
|
P. Sitarek,;H. P. Hsu,;Y. S. Huang,;J. M. Lin,;H. H. Lin,;K. K. Tiong,; P. Sitarek,; H. P. Hsu,; Y. S. Huang,; J. M. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:41:11Z |
Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy
|
J. S. Liu,; J. S. Wang,; K. Y. Hsieh,; H. H. Lin,; HAO-HSIUNG LIN |
