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机构 日期 题名 作者
臺大學術典藏 2018-09-10T07:41:12Z GaAAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer Y. R. Lin,;Y. F. Lai,;C. P. Liu,;H. H. Lin,; Y. R. Lin,; Y. F. Lai,; C. P. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:12Z Piezoreflectance and photoreflectance study of annealing effects on GaAs0.946Sb0.084 and GaAs0.906Sb0.075N0.019 films on GaAs grown by gas-source molecular beam epitaxy, H. P. Hsu,;Y. N. Huang,;Y. S. Huang,;Y. T. Lin,;T. C. Ma,;H. H. Lin,;K. K. Tiong,;P. Sitarek,;J. Misiewicz,; H. P. Hsu,; Y. N. Huang,; Y. S. Huang,; Y. T. Lin,; T. C. Ma,; H. H. Lin,; K. K. Tiong,; P. Sitarek,; J. Misiewicz,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:12Z GaAs0.7Sb0.3/GaAs type-II quantum well laser with an adjacent InAs quantum-dot layer Y. R. Lin, H. H. Lin,;J. H. Chu; Y. R. Lin, H. H. Lin,; J. H. Chu; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:12Z Optical studies of type-I GaAs1-xSbx/GaAs multiple quantum well structures P. Sitarek,;H. P. Hsu,;Y. S. Huang,;J. M. Lin,;H. H. Lin,;K. K. Tiong,; P. Sitarek,; H. P. Hsu,; Y. S. Huang,; J. M. Lin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:11Z Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy J. S. Liu,; J. S. Wang,; K. Y. Hsieh,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:41:11Z Growth and postgrowth rapid thermal annealing of InAsN/InGaAs single quantum well on InP grown by gas source molecular beam epitaxy Wang, Jyh-Shyang; Lin, Hao-Hsiung; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:02Z Effect of annealing on the electrical and optical properties of dilute nitride GaAsSbN S. P. Wang;T. C. Ma;Y. T. Lin;H. H. Lin; S. P. Wang; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:02Z Band structure of dilute nitride GaAsSbN Y. T. Lin;T. C. Ma;T. Y. Chen;H. H. Lin; Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:02Z Photoluminescence study of InAsPSb epilayers grown on GaAs substrates Y. C. Chou,;G. Tsai,;H. H. Lin,; Y. C. Chou,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏 2018-09-10T07:08:02Z Effect of adjacent quantum dots on the characteristics of GaAsSb/GaAs type-II quantum well lasers Y. R. Lin;J. H. Chu;H. H. Lin; Y. R. Lin; J. H. Chu; H. H. Lin; HAO-HSIUNG LIN

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