| 臺大學術典藏 |
2018-09-10T07:08:02Z |
Band alignment and valence band anticrossing model for InAsSb/InAsPSb heterojunction
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Origin of the annealing-induced blue-shift in GaAsSbN
|
Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
GaAsSbN/GaAs long wavelength PIN detectors
|
C. K. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Dilute nitride GaAsSbN grown by gas source molecular beam epitaxy
|
H. H. Lin; T. C. Ma; Y. T. Lin; C. K. Chen; T. Y. Chen; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum well
|
C. J. Wu;G. Tsai;H. H. Lin; C. J. Wu; G. Tsai; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics
|
Q. Zhuang,;A. Godenir,;A. Krier, G. Tsai,;H. H. Lin,; Q. Zhuang,; A. Godenir,; A. Krier, G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:01Z |
Band alignment of InAsSb/InAsPSb quantum wells
|
C. J. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Design and fabrication of AlGaAs ambient light detectors
|
T. C. Lin; T. C. Ma; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Molecular beam epitaxial growth of InAsN:Sb for mid-infrared optoelectronics
|
Q. Zhuang,;A. Godenir,;A. Krier,;G. Tsai,;H. H. Lin,; Q. Zhuang,; A. Godenir,; A. Krier,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:08:00Z |
Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance
|
S. A. Cripps; T. J. C. Hosea; A. Krier; V. Smirnov; P. J. Batty; Q. D. Zhuang; H. H. Lin; P. W. Liu; G. Tsai; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy
|
T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy
|
Hsu, Hung-Pin;Huang, Yen-Neng;Huang, Ying-Sheng;Lin, Yang-Ting;Ma, Ta-Chun;Lin, Hao-Hsiung;Tiong, Kwong-Kau;Sitarek, Piotr;Misiewicz, Jan; Hsu, Hung-Pin; Huang, Yen-Neng; Huang, Ying-Sheng; Lin, Yang-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Tiong, Kwong-Kau; Sitarek, Piotr; Misiewicz, Jan; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:59Z |
Photoluminescence of InAs0.04P0.67Sb0.29
|
Tsai, Gene; Wang, De-Lun; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:58Z |
Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells
|
T. S. Wang;J. T. Tsai;K. I. Lin;J. S. Hwang;H. H. Lin;L. C. Chou; T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; H. H. Lin; L. C. Chou; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T07:07:58Z |
Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers
|
Chen, Cheng-Yuan; Lee, Jia-Ren; Lu, Chien-Rong; Liu, Hsiang-Lin; Sun, Li-Wen; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors
|
Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Effect of thermal annealing on the optical properties of GaAsSbN
|
Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally
|
C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Origin of the annealing-induced blue-shift in GaAsSbN bulk layers
|
Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy
|
G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:46Z |
類人眼之光偵測器
|
林浩雄; 馬大鈞; 吳俊逸; HAO-HSIUNG LIN; 林浩雄; 馬大鈞; 吳俊逸 |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy
|
C. J. Wu,; G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy
|
G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates
|
T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T06:34:45Z |
Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m
|
C. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN |
