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Showing items 161-210 of 292 (6 Page(s) Totally)
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Institution	Date	Title	Author
臺大學術典藏	2018-09-10T07:07:59Z	Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy	T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:07:59Z	Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy	Hsu, Hung-Pin;Huang, Yen-Neng;Huang, Ying-Sheng;Lin, Yang-Ting;Ma, Ta-Chun;Lin, Hao-Hsiung;Tiong, Kwong-Kau;Sitarek, Piotr;Misiewicz, Jan; Hsu, Hung-Pin; Huang, Yen-Neng; Huang, Ying-Sheng; Lin, Yang-Ting; Ma, Ta-Chun; Lin, Hao-Hsiung; Tiong, Kwong-Kau; Sitarek, Piotr; Misiewicz, Jan; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:07:59Z	Photoluminescence of InAs0.04P0.67Sb0.29	Tsai, Gene; Wang, De-Lun; Lin, Hao-Hsiung; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:07:58Z	Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells	T. S. Wang;J. T. Tsai;K. I. Lin;J. S. Hwang;H. H. Lin;L. C. Chou; T. S. Wang; J. T. Tsai; K. I. Lin; J. S. Hwang; H. H. Lin; L. C. Chou; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T07:07:58Z	Optical properties of InGaNAs/GaAs quantum well structures with GaNAs strain relief buffer layers	Chen, Cheng-Yuan; Lee, Jia-Ren; Lu, Chien-Rong; Liu, Hsiang-Lin; Sun, Li-Wen; Lin, Hao-Hsiung; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Strain-induced GaAsSb/GaAs quantum dot by self-organized InAs quantum-dot stressors	Y. R. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Effect of thermal annealing on the optical properties of GaAsSbN	Y. T. Lin; T. C. Ma; T. Y. Chen; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary ally	C. J. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Origin of the annealing-induced blue-shift in GaAsSbN bulk layers	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	Photoluminescence study on InAs0.04P0.665Sb0.295 quarternary alloy	G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:46Z	類人眼之光偵測器	林浩雄; 馬大鈞; 吳俊逸; HAO-HSIUNG LIN; 林浩雄; 馬大鈞; 吳俊逸
臺大學術典藏	2018-09-10T06:34:45Z	InAsSb/InAsPSb quantum wells grown by gas source molecular beam epitaxy	C. J. Wu,; G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Photoluminescence study on InAsPSb grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Temperature dependence of the energy gaps of GaAsSbN epilayers on GaAs substrates	T. C. Ma,; T. Y. Chen,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Dilute nitride GaAs0.852Sb0.117N0.031/ GaAs PIN detector with a cut-off wavelength>1.5m	C. K. Chen; T. C. Ma; Y. T. Lin; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Burstein-Moss shift in heavily Be-doped InAs0.66P0.24Sb0.10	I. C. Chen; G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:45Z	Optical properties of (100) and (111)B GaAsSb grown by Gas-Source Molecular Beam Epitaxy	L. C. Chou; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:44Z	Mid-infrared photoreflectance study of InAs-rich InAsSb and GaInAsPSb, indicating negligible bowing for the spin-orbit splitting energy	S. A. Cripps,; T. J. C. Hosea,; A. Krier,; V. Smirnov,; P. J. Batty,; Q. D. Zhuang,; H. H. Lin,; P. W. Liu,; G. Tsai,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:44Z	The dependence of terahertz radiation on the built-in electric field in semiconductor microstructures	Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei; HAO-HSIUNG LIN; Hwang, Jenn-Shyong; Lin, Hui-Ching; Chang, Chin-Kuo; Wang, Tai-Shen; Chang, Liang-Son; Chyi, Jen-Inn; Liu, Wei-Sheng; Chen, Shu-Han; Lin, Hao-Hsiung; Liu, Po-Wei
臺大學術典藏	2018-09-10T06:34:44Z	Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy	Chan, C. H.;Lee, C. H.;Huang, Y. S.;Wang, J. S.;Lin, H. H.; Chan, C. H.; Lee, C. H.; Huang, Y. S.; Wang, J. S.; Lin, H. H.; Chan, C. H.; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:44Z	Incorporation behaviors of group V elements in GaAsSbN grown by gas source molecular beam epitaxy	T. C. Ma,; Y. T. Lin,; T. Y. Chen,; L. C. Chou,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:43Z	Unusual optical properties of type-II InAs/GaAs0.7Sb0.3 quantum dots by photoluminescence studies	T. T. Chen,; C. L. Cheng,; Y. F. Chen,; F. Y. Chang,; H. H. Lin,; C. T. Wu,; C. H. Chen,; HAO-HSIUNG LIN; YANG-FANG CHEN
臺大學術典藏	2018-09-10T06:34:43Z	InAsPSb quaternary alloy grown by gas source molecular beam epitaxy	Y. T. Lin,; H. H. Lin; HAO-HSIUNG LIN; G. Tsai,; D. L. Wang,; C. E. Wu,; C. J. Wu,
臺大學術典藏	2018-09-10T06:34:43Z	Comparative study of InAs quantum dots with different InGaAs capping methods	C. H. Lin; W. W. Pai; F. Y. Chang; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:34:43Z	Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells	H. P. Hsu,; P. Sitarek,; Y. S. Huang,; P. W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:20:13Z	Optical and structural properties of vertically stacked and electronically coupled quantum dots in InAs/GaAs multilayer structures	Yu, S.H.; Lin, Y.R.; Lin, H.H.; Yang, C.S.; Chen, T.T.; Chen, Y.F.; Shu, G.W.; Shen, J.L.; Hsiao, R.S.; Chen, J.F.; Chi, J.Y.; Wang, J.S.; HAO-HSIUNG LIN; YANG-FANG CHENet al.
臺大學術典藏	2018-09-10T06:18:12Z	An experimental study on Γ(2) modular symmetry in the quantum Hall system with a small spin splitting	Huang, C.F.; Chang, Y.H.; Cheng, H.H.; Yang, Z.P.; Yeh, H.D.; Hsu, C.H.; Liang, C.-T.; Hang, D.R.; Lin, H.H.; CHI-TE LIANG; YUAN-HUEI CHANG; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:01Z	Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy	T. C. Ma; Y. T. Lin; T. Y. Chen; H. H. Lin; T. C. Ma,; Y. T. Lin,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:00Z	Negative deviation from Vegard’s law in GaAsSbN grown by gas-source molecular beam epitaxy	Y. T. Lin,; T. C. Ma,; T. Y. Chen,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:00Z	A thermodynamic model for As and Sb incorporation behavior in GaAsSb/GaAs multiple quantum wells grown by gas source molecular beam epitaxy	J. M. Lin; L. C. Chou; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:02:00Z	Optical properties of InAsPSb alloys grown by gas-source molecular beam epitaxy	D. L. Wang,; G. Tsai,; C. J. Wu,; C. E. Wu,; F. Tseng,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	MBE growth of quaternary InAsPSb alloy	H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	GaAsSbN grown on GaAs by gas source molecular beam epitaxy	T. C. Ma,; T. Y. Chen,; S. K. Chang,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	InAsPsb quaternary for mid-infrared application grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	Mid-infrared InAsPSb/InAsSb quantum-well light emitter	C. E. Wu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	InAsPSb bulk layer and quantum well grown by gas source molecular beam epitaxy	G. Tsai,; D. L. Wang,; C. E. Wu,; C. R. Wu,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:59Z	Photoluminescence study on GaAsSbN grown by gas source molecular beam epitaxy	T. Y. Chen,; T. C. Ma,; Y. T. Lin,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:58Z	InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer	C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:58Z	Mid-infrared electroluminescence at room temperature from InAsSb multi-quantum well light emitting diodes	A. Krier,; M. Stone,; Q. D. Zhuang,; P. W. Liu,; G. Tsai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:58Z	Compositional dependence of longitudinal sound velocities of piezoelectric (111) InxGa1-xAs measured by picosecond ultrasonics	Y. C. Wen; K. H. Lin; T. F. Kao; L. C. Chou; H. H. Lin; C. K. Sun; HAO-HSIUNG LIN; CHI-KUANG SUN
臺大學術典藏	2018-09-10T06:01:58Z	Photoluminescence and bowing parameters of InAsSb/InAs multiple quantum wells grown by molecular beam epitaxy	P. W. Liu,; G. Tsai,; H. H. Lin,; A. Krier,; Q. D. Zhuang,; M. Stone,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T06:01:57Z	Modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells	Hsu, H. P.; Sitarek, P.; Huang, Y. S.; Liu, P.W.; Lin, J.M.; Lin, H. H.; Tiong, K.K.; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	Photoluminescence study on InAsSb/InAs multiple quantum well grown by molecular epitaxy	P. W. Liu,; G. Tsai,; H. H. Lin,; T. Krier,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	Growth of InPSb on InAs inside a miscibility gap using gas source MBE	G. Tsai; H. H. Lin; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	Optical biased contactless electroreflectance and surface photovoltage spectroscopy study of type-II GaAsSb/GaAs multiple quantum wells	H. P. Hsu,; Y. S. Huang,; P.W. Liu,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	Numerical simulation on optical properties of GaN/AlN quantum dots	C. Y. Chen,; C. M. Lai,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:32Z	The photoluminescence spectrum study of different source growth GaAsSb/GaAs type II quantum well	G. L. Wang,; Y. S. Huang,; H. H. Lin,; C. H. Chan,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:31Z	GaAsSb/GaAs quantum wells grown by MBE	H. H. Lin,; P. W. Liu,; C. L. Tsai,; G. H. Liao,; J. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:31Z	Study on the band line-up of GaAsSb/GaAs quantum wells	C. L. Tsai,; P. W. Liu,; G. H. Liao,; M. H. Lee,; H. H. Lin,; HAO-HSIUNG LIN
臺大學術典藏	2018-09-10T05:26:31Z	InAs/InGaAs/GaAs coupled quantum-dot laser	C. S. Lee,; F. Y. Chang,; D. S. Liu,; H. H. Lin,; HAO-HSIUNG LIN

Showing items 161-210 of 292 (6 Page(s) Totally)
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