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"hao hsiung lin"的相關文件
顯示項目 26-75 / 292 (共6頁)
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| 臺大學術典藏 |
2020-06-11T06:39:43Z |
Characteristics of Si-doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source
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HAO-HSIUNG LIN; Liu, C.-W.;Chen, S.-L.;Lay, J.-P.;Lee, S.-C.;Lin, H.-H.; Liu, C.-W.; Chen, S.-L.; Lay, J.-P.; Lee, S.-C.; Lin, H.-H. |
| 臺大學術典藏 |
2020-06-11T06:39:42Z |
Optical characterization of GaAs 0.7Sb 0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot layer composite structures
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Wu, J.D.;Lin, Y.J.;Huang, Y.S.;Lin, Y.R.;Lin, H.H.; Wu, J.D.; Lin, Y.J.; Huang, Y.S.; Lin, Y.R.; Lin, H.H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:40Z |
Single and multiple AlGaAs quantum-well structures grown by liquid-phase epitaxy
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Chen, J.-A.;Wang, C.-K.;Lin, H.-H.;Wang, W.-S.;Lee, S.-C.; Chen, J.-A.; Wang, C.-K.; Lin, H.-H.; Wang, W.-S.; Lee, S.-C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:40Z |
Studies of low-surface 2-kT recombination current of the emitter-base heterojunction of heterojunction bipolar transistors
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Wu, C.-C.;Ting, J.-L.;Lee, S.-C.;Lin, H.-H.; Wu, C.-C.; Ting, J.-L.; Lee, S.-C.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:40Z |
Abrupt heterointerfaces in Al0.35Ga0.65As/Al 0.05Ga0.95As/Al0.35Ga0.65As quantum well structure grown by liquid-phase epitaxy
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Chen, J.-A.;Lee, J.-H.;Lee, S.-C.;Lin, H.-H.; Chen, J.-A.; Lee, J.-H.; Lee, S.-C.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:40Z |
Design of n-p-n AlGaAs double-heterojunction bipolar transistors
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Chen, C.-Z.;Lee, S.-C.;Lin, H.-H.; Chen, C.-Z.; Lee, S.-C.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:39Z |
Current transport across the emitter-base potential spike in AlGaAs/GaAs heterojunction bipolar transistors
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Lee, S.-C.;Kau, J.-N.;Lin, H.-H.; Lee, S.-C.; Kau, J.-N.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:39Z |
Transport theory of the double heterojunction bipolar transistor based on current balancing concept
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Lee, S.-C.;Lin, H.-H.; Lee, S.-C.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:38Z |
Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance
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Chen, Y.F.;Shen, J.L.;Dai, Y.D.;Jan, G.J.;Lin, H.H.; Chen, Y.F.; Shen, J.L.; Dai, Y.D.; Jan, G.J.; Lin, H.H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:38Z |
Dependence of electron effective mass on alloy composition of InAlGaAs lattice matched to InP studied by optically detected cyclotron resonance
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Chen, Y.F.;Dai, Y.T.;Fan, J.C.;Lee, T.L.;Lin, H.H.; Chen, Y.F.; Dai, Y.T.; Fan, J.C.; Lee, T.L.; Lin, H.H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:38Z |
Erratum: Study of InAlAs/InGaAs heterojunction bipolar transistor layers by optically detected cyclotron resonance" (Applied Physics Letters (1995) 66 (2543))
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Chen, Y.F.;Shen, J.L.;Dai, Y.D.;Jan, G.J.;Lin, H.H.; Chen, Y.F.; Shen, J.L.; Dai, Y.D.; Jan, G.J.; Lin, H.H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:37Z |
Photoreflectance characterization of an InAlAs/InGaAs heterostructure bipolar transistor
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Hsu, K.T.; Chen, Y.H.; Chen, K.L.; Chen, H.P.; Lin, H.H.; Jan, G.J.; HAO-HSIUNG LIN; Hsu, K.T.;Chen, Y.H.;Chen, K.L.;Chen, H.P.;Lin, H.H.;Jan, G.J. |
| 臺大學術典藏 |
2020-06-11T06:39:37Z |
A New Analytic Formula for Minority Carrier Decay Length Extraction from Scanning Photocurrent Profiles in Ohmic-Contact Nanowire Devices
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Chu, Cheng-Hao;Mao, Ming-Hua;Yang, Che-Wei;Lin, Hao-Hsiung; Chu, Cheng-Hao; Mao, Ming-Hua; Yang, Che-Wei; Lin, Hao-Hsiung; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:37Z |
Nonlinear refractive-index and two photon-absorption near half the band gap in AlGaAs
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Villeneuve, A.;Yang, C.C.;Stegeman, G.I.;Lin, C.-H.;Lin, H.-H.; Villeneuve, A.; Yang, C.C.; Stegeman, G.I.; Lin, C.-H.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:37Z |
Measurements of two-photon absorption coefficient and induced nonlinear refractive-index in GaAs/AlGaAs multiquantum well waveguides
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Yang, C.C.;Villeneuve, A.;Stegeman, G.I.;Lin, C.-H.;Lin, H.-H.; Yang, C.C.; Villeneuve, A.; Stegeman, G.I.; Lin, C.-H.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:36Z |
Influence of tunneling barrier width on the forward current characteristics of InAs-based microwave p-n diode
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Yang, C.C.;Su, Y.K.;Lin, H.H.; Yang, C.C.; Su, Y.K.; Lin, H.H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:35Z |
Optical and structural characteristics of Bridgman grown cubic Zn1-xMnxTe alloys
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Talwar, D.N.;Becla, P.;Lin, H.-H.;Feng, Z.C.; Talwar, D.N.; Becla, P.; Lin, H.-H.; Feng, Z.C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:35Z |
First attempt to identify site occupation preference coefficients of a quaternary alloy: The InAsxPySb1-x-y system
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Robouch, B.V.;Lin, H.-H.;Valeev, R.G.;Trigub, A.L.;Omar, J.;Kisiel, A.;Marcelli, A.; Robouch, B.V.; Lin, H.-H.; Valeev, R.G.; Trigub, A.L.; Omar, J.; Kisiel, A.; Marcelli, A.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:35Z |
Evolution of the local structure and crystal phase for thin ZnGaO films grown by metal organic chemical vapor deposition
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HAO-HSIUNG LIN; Lin, Xiwen;Chen, Daihua;Niu, Wenlong;Huang, Chiung-Yi;Horng, Ray Hua;Cheng, Li-Chung;Talwar, Devki N.;Lin, Hao Hsiung;Lee, Jyh-Fu;Feng, Zhe Chuan;Wan, Lingyu; Lin, Xiwen; Chen, Daihua; Niu, Wenlong; Huang, Chiung-Yi; Horng, Ray Hua; Cheng, Li-Chung; Talwar, Devki N.; Lin, Hao Hsiung; Lee, Jyh-Fu; Feng, Zhe Chuan; Wan, Lingyu |
| 臺大學術典藏 |
2020-06-11T06:39:34Z |
The incorporation behavior of As and P in GaInAsP (λ ? μm) on InP grown by gas source molecular beam epitaxy
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Lee, T.-L.;Liu, J.-S.;Lin, H.-H.; Lee, T.-L.; Liu, J.-S.; Lin, H.-H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:34Z |
Surface/structural characteristics and band alignments of thin Ga 2 O 3 films grown on sapphire by pulse laser deposition
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Yang, H.;Qian, Y.;Zhang, C.;Wuu, D.-S.;Talwar, D.N.;Lin, H.-H.;Lee, J.-F.;Wan, L.;He, K.;Feng, Z.C.; Yang, H.; Qian, Y.; Zhang, C.; Wuu, D.-S.; Talwar, D.N.; Lin, H.-H.; Lee, J.-F.; Wan, L.; He, K.; Feng, Z.C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:34Z |
An AlGaAs-GaAs dual-wavelength photodetector with 500 ? resolution
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Lee, S.C.;Lin, H.H.;Chiou, Y.L.; Lee, S.C.; Lin, H.H.; Chiou, Y.L.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:33Z |
Phonon characteristics of Si-doped InAs grown by gas-source molecular beam epitaxy
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Talwar, Devki N.;Lin, Hao-Hsiung;Feng, Zhe Chuan; Talwar, Devki N.; Lin, Hao-Hsiung; Feng, Zhe Chuan; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:33Z |
A novel coplanar waveguide series stub matching structure for a broadband amplifier
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Chiou, H.?K.;Chang, C.?Y.;Lin, H.?H.; Chiou, H.?K.; Chang, C.?Y.; Lin, H.?H.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2020-06-11T06:39:32Z |
Short range structure of dilute nitride GaAsSbN
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Lin, H.-H.;Chiou, C.-L.;Lin, Y.-T.;Ma, T.-C.;Wu, J.-S.;Feng, Z.-C.; Lin, H.-H.; Chiou, C.-L.; Lin, Y.-T.; Ma, T.-C.; Wu, J.-S.; Feng, Z.-C.; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T15:25:55Z |
Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques
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H. P. Hsu,;J. D. Wu,;Y. J. Lin,;Y. S. Huang,;Y. R. Lin,;H. H. Lin,; H. P. Hsu,; J. D. Wu,; Y. J. Lin,; Y. S. Huang,; Y. R. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T15:23:17Z |
InAsSb/InAsPSb multiple quantum well disk cavities with pedestal structures on a GaSb substrate for mid-infrared whispering-gallery-mode emission beyond 4 μm
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Lin, Y.-C.;Mao, M.-H.;Wu, C.-J.;Lin, H.-H.; Lin, Y.-C.; Mao, M.-H.; Wu, C.-J.; Lin, H.-H.; MING-HUA MAO; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T15:00:12Z |
X-ray absorption near edge structure of silicon in indium arsenide
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M. C. Liu,;Z. C. Feng,;H. H. Lin,; M. C. Liu,; Z. C. Feng,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T15:00:12Z |
Study of power-dependence Raman spectroscopy of undoped InAs epitaxial layer
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T. H. Huang,;W. C. Chen,;K. C. Chen,;H. H. Lin,; T. H. Huang,; W. C. Chen,; K. C. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T15:00:12Z |
Polarized Raman spectroscopy of 3C-SiC film grown on 4H-SiC substrate
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C. Y. Tsai,;B. Xin,;Z. C. Feng,;Y. M. Zhang,;R. X. Jia,;H. H. Lin,; C. Y. Tsai,; B. Xin,; Z. C. Feng,; Y. M. Zhang,; R. X. Jia,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T15:00:11Z |
Ordering InGaP epilayer grown on Ge substrate
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H. M. Wu,;S. J. Tsai,;Y. C. Chang,;Y. R. Chen,;H. H. Lin,; H. M. Wu,; S. J. Tsai,; Y. C. Chang,; Y. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T15:00:11Z |
Bond distortion in GaPSb alloys studied by reciprocal space mapping and extended X-ray absorption fine structure
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C. Y. Tsai;M. C. Liu;Y. C. Chin;Z. C. Feng;H. H. Lin; C. Y. Tsai; M. C. Liu; Y. C. Chin; Z. C. Feng; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T15:00:11Z |
Structural properties of GaAsSb grown on (111)B GaAs
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Y. H. Lin,;S. C. Chen,;Y. R. Chen,;H. H. Lin,; Y. H. Lin,; S. C. Chen,; Y. R. Chen,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T15:00:11Z |
Mid-infrared whispering gallery mode emission from InAsSb/InAsPSb multiple quantum wells in a disk cavity
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H. H. Lin,; HAO-HSIUNG LIN; Y. C. Lin,; M. H. Mao,; C. J. Wu,; Y. C. Lin,;M. H. Mao,;C. J. Wu,;H. H. Lin, |
| 臺大學術典藏 |
2018-09-10T15:00:11Z |
Band discontinuity in InAsPSb alloy system
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C. Y. Tsai;W. C. Chen;P. H. Chang;C. I. Wu;H. H. Lin; C. Y. Tsai; W. C. Chen; P. H. Chang; C. I. Wu; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T15:00:11Z |
Effect of focued ion beam imaging process on the crystallinity of InAs
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T. H. Huang;W. C. Chen;K. C. Chen;H. H. Lin; T. H. Huang; W. C. Chen; K. C. Chen; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T15:00:11Z |
Photoluminescence and Raman scattering of degenerate InN
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F. W. Pranoto,;C. Y. Tsai,;Y. C. Liao,;L. C. Chen,;K. H. Chen,;H. H. Lin,;Z. C. Feng,; F. W. Pranoto,; C. Y. Tsai,; Y. C. Liao,; L. C. Chen,; K. H. Chen,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T15:00:11Z |
Study of twin defects in (111)B GaAsSb by X-ray diffraction
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S. C. Chen,;Y. H. Lin,;H. H. Lin,; S. C. Chen,; Y. H. Lin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T15:00:10Z |
Temperature dependence study of near-band-edge transitions of compressively strained quaternary GaAsPSb layer by photoreflectance and piezoreflectance spectroscopy
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H. P. Hsu,;P. H. Wu,;J. Y. Chen,;B. H. Chen,;Y. S. Huang,;Y. C. Chin,;H. H. Lin,;K. K. Tiong,; H. P. Hsu,; P. H. Wu,; J. Y. Chen,; B. H. Chen,; Y. S. Huang,; Y. C. Chin,; H. H. Lin,; K. K. Tiong,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T14:58:01Z |
All-optical switching in GaAs microdisk resonators by a femtosecond pump-probe technique through tapered-fiber coupling
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Lin, Y.-C.;Mao, M.-H.;Lin, Y.-R.;Lin, H.-H.;Lin, C.-A.;Wang, L.A.; Lin, Y.-C.; Mao, M.-H.; Lin, Y.-R.; Lin, H.-H.; Lin, C.-A.; Wang, L.A.; MING-HUA MAO; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:19Z |
Investigation of the Optical and Structural Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes
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C. X. Wang,;Y. T. He,;M. T. Niu,;J. Y. Yao,;E. Jones,;Z. R. Qiu,;X. Zhang,;H. H. Lin,;Z. C. Feng,; C. X. Wang,; Y. T. He,; M. T. Niu,; J. Y. Yao,; E. Jones,; Z. R. Qiu,; X. Zhang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:19Z |
Raman spectroscopy of GaAsPSb alloys
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C. Y. Tsai,;Y. C. Chin,;H. H. Lin,; C. Y. Tsai,; Y. C. Chin,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:19Z |
Properties of Variable Al Content of AlGaN Layers Grown by MOCVD
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C. X. Wang,;F. D. Li,;S. C. Wang,;M. Zhu,;X. Zhang,;H. H. Lin,;Z. C. Feng,; C. X. Wang,; F. D. Li,; S. C. Wang,; M. Zhu,; X. Zhang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Short range structure of dilute nitride GaAsSbN
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H. H. Lin,;C. L. Chiou,;Y. T. Lin,;T. C. Ma,;J. S. Wu,;Z. C. Feng,; H. H. Lin,; C. L. Chiou,; Y. T. Lin,; T. C. Ma,; J. S. Wu,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxy
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Y. R. Chen,;L. C. Chou,;Y. J. Yang,;H. H. Lin,; Y. R. Chen,; L. C. Chou,; Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001)
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D. N. Talwar,;T. R. Yang,;H. H. Lin,;Z. C. Feng,; D. N. Talwar,; T. R. Yang,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation
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K. I. Lin;K. L. Lin;B. W. Wang;H. H. Lin;J. S. Huang; K. I. Lin; K. L. Lin; B. W. Wang; H. H. Lin; J. S. Huang; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Raman characterization of primary and double twinning for (111)B GaAsSb grown on GaAs
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Y. R. Chen,;H. H. Lin; Y. R. Chen,; H. H. Lin; HAO-HSIUNG LIN |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Ge out-diffusion and its effect on ordering phase in InGaP grown on Ge substrate
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Y. J. Yang,; H. H. Lin,; HAO-HSIUNG LIN; H. M. Wu,;Y. J. Yang,;H. H. Lin,; H. M. Wu, |
| 臺大學術典藏 |
2018-09-10T09:50:18Z |
Ordering effect of MOCVD-grown InGaP/GaAs studied by Raman scattering
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B. W. Wang,;C. J. Hong-Liao,;H. H. Lin,;Z. C. Feng,; B. W. Wang,; C. J. Hong-Liao,; H. H. Lin,; Z. C. Feng,; HAO-HSIUNG LIN |
顯示項目 26-75 / 292 (共6頁)
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