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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 亞洲大學 |
2015-03 |
High Voltage NLDMOS with Multiple-RESURF Structure to Achieve Improved On-resistance
|
楊紹明;Yang, Shao-Ming;*; Hema, EP;Hema, EP;Mri, Aryadeep;Mrinal, Aryadeep;許健;Sheu, Gene;陳柏安;Chen, PA |
| 亞洲大學 |
2015-03 |
A HSPICE Macro Model for the ESD Behavior of Gate Grounded NMOS and Gate coupled NMOS
|
楊紹明;Yang, Shao-Ming;Hema, EP;Hema, EP;許健;Sheu, Gene;Mri, Aryadeep;Mrinal, Aryadeep;Md.Amanulla;Md.Amanullah;陳柏安;Chen, PA |
| 亞洲大學 |
2015-03 |
High Voltage NLDMOS with Multiple-RESURF Structure to Achieve Improved On-resistance
|
楊紹明;Yang, Shao-Ming;Hema, EP;Hema, EP;Mri, Aryadeep;Mrinal, Aryadeep;許健;Sheu, Gene;陳柏安;Chen, PA |
| 亞洲大學 |
2015-03 |
A HSPICE Macro Model for the ESD Behavior of Gate Grounded NMOS and Gate coupled NMOS
|
楊紹明;Yang, Shao-Ming;Hema, EP;Hema, EP;許健;Sheu, Gene;Mri, Aryadeep;Mrinal, Aryadeep;Md.Amanulla;Md.Amanullah;陳柏安;Chen, PA |
Showing items 1-4 of 4 (1 Page(s) Totally)
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