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Institution Date Title Author
國立交通大學 2014-12-08T15:23:38Z Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching Kuo, Chien-I; Hsu, Heng-Tung; Hsu, Ching-Yi; Yu, Chia-Hui; Ho, Han-Chieh; Chang, Edward Yi; Chyi, Jen-Inn

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