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Showing items 1-10 of 18  (2 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2019-04-02T05:59:47Z A three-parameters-only MOSFET subthreshold current CAD model considering back-gate bias and process variation Chen, MJ; Ho, JS
國立交通大學 2014-12-08T15:49:13Z High-pressure synthesis and characterization of rare-earth substituted (Y,R)(2)Ba4Cu7O15-delta (R = La, Tb, Yb, Lu) cuprates Chen, TM; Lee, SY; Ho, JS
國立交通大學 2014-12-08T15:40:27Z Burst synchronization of slotted random access with preamble power ramping in the reverse link of CDMA systems Sheen, WH; Tseng, CC; Ho, JS
國立交通大學 2014-12-08T15:39:15Z A low-power ASIC design for cell search in the W-CDMA system Li, CF; Chu, YS; Sheen, WH; Tian, FC; Ho, JS
國立交通大學 2014-12-08T15:04:58Z MICROSTRUCTURE, THERMOELECTRIC-POWER AND MAGNETIC IRREVERSIBILITY OF COPRECIPITATED YBA2CU4O8 POWDERS LIU, RS; ZHENG, DN; OBERTELLI, SD; HO, JS; CHEN, TM; EDWARDS, PP; CHANG, CT
國立交通大學 2014-12-08T15:04:20Z SYNTHESIS OF A 90 K Y2BA4CU7O15-X SUPERCONDUCTOR UNDER AMBIENT-PRESSURE BY TRIETHYLAMMONIUMOXALATE COPRECIPITATION CHEN, TM; HO, JS; LIU, RS; KOO, HS
國立交通大學 2014-12-08T15:02:53Z High gain p-n-p gated lateral bipolar action in a fully depleted counter-type: Channel p-MOSFET structure Ho, JS; Huang, TH; Chen, MJ
國立交通大學 2014-12-08T15:02:41Z Optimizing the match in weakly inverted MOSFET's by gated lateral bipolar action Chen, MJ; Ho, JS; Chang, DY
國立交通大學 2014-12-08T15:02:35Z Back-gate forward bias method for low-voltage CMOS digital circuits Chen, MJ; Ho, JS; Huang, TH; Yang, CH; Jou, YN; Wu, T
國立交通大學 2014-12-08T15:01:53Z A three-parameters-only MOSFET subthreshold current CAD model considering back-gate bias and process variation Chen, MJ; Ho, JS

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