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| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga2O3(Gd2O3) as gate oxide
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Ren, F.; Hong, M.; Hobson, W.S.; Kuo, J.M.; Lothian, J.R.; Mannaerts, J.P.; Kwo, J.; Chu, S.N.G.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG |
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