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Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
Publisher's Note:``Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation''[Appl. Phys. Lett. 98, 062108 (2011)]
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Lin, CA;Chiu, HC;Chiang, TH;Lin, TD;Chang, YH;Chang, WH;Chang, YC;Wang, W-E;Dekoster, J;Hoffmann, TY;others; Lin, CA; Chiu, HC; Chiang, TH; Lin, TD; Chang, YH; Chang, WH; Chang, YC; Wang, W-E; Dekoster, J; Hoffmann, TY; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:13Z |
Publisher's Note:``Attainment of low interfacial trap density absent of a large midgap peak in In0. 2Ga0. 8As by Ga2O3 (Gd2O3) passivation''[Appl. Phys. Lett. 98, 062108 (2011)]
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Lin, CA;Chiu, HC;Chiang, TH;Lin, TD;Chang, YH;Chang, WH;Chang, YC;Wang, W-E;Dekoster, J;Hoffmann, TY;others; Lin, CA; Chiu, HC; Chiang, TH; Lin, TD; Chang, YH; Chang, WH; Chang, YC; Wang, W-E; Dekoster, J; Hoffmann, TY; others; MINGHWEI HONG |
Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
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