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"hollenberg l c l"的相关文件
显示项目 1-12 / 12 (共1页)
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| 臺大學術典藏 |
2019-12-20T01:18:43Z |
Progress in silicon-based quantum computing
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Brenner, R.; Buehler, T.M.; Chan, V.; Curson, N.J.; Dzurak, A.S.; Gauja, E.; Goan, H.S.; Greentree, A.D.; Hallam, T.; Hamilton, A.R.; Hollenberg, L.C.L.; Jamieson, D.N.; Mccallum, J.C.; Milburn, G.J.; O'Brien, J.L.; Oberbeck, L.; Pakes, C.I.; Prawer, S.D.; Reilly, D.J.; Ruess, F.J.; Schofield, S.R.; Simmons, M.Y.; Stanley, F.E.; Starrett, R.P.; Wellard, C.; Yang, C.; HSI-SHENG GOAN; Clark, R.G.;Brenner, R.;Buehler, T.M.;Chan, V.;Curson, N.J.;Dzurak, A.S.;Gauja, E.;Goan, H.S.;Greentree, A.D.;Hallam, T.;Hamilton, A.R.;Hollenberg, L.C.L.;Jamieson, D.N.;Mccallum, J.C.;Milburn, G.J.;O'Brien, J.L.;Oberbeck, L.;Pakes, C.I.;Prawer, S.D.;Reilly, D.J.;Ruess, F.J.;Schofield, S.R.;Simmons, M.Y.;Stanley, F.E.;Starrett, R.P.;Wellard, C.;Yang, C.; Clark, R.G. |
| 臺大學術典藏 |
2019-12-20T01:18:43Z |
Progress in silicon-based quantum computing
|
Brenner, R.; Buehler, T.M.; Chan, V.; Curson, N.J.; Dzurak, A.S.; Gauja, E.; Goan, H.S.; Greentree, A.D.; Hallam, T.; Hamilton, A.R.; Hollenberg, L.C.L.; Jamieson, D.N.; Mccallum, J.C.; Milburn, G.J.; O'Brien, J.L.; Oberbeck, L.; Pakes, C.I.; Prawer, S.D.; Reilly, D.J.; Ruess, F.J.; Schofield, S.R.; Simmons, M.Y.; Stanley, F.E.; Starrett, R.P.; Wellard, C.; Yang, C.; HSI-SHENG GOAN; Clark, R.G.;Brenner, R.;Buehler, T.M.;Chan, V.;Curson, N.J.;Dzurak, A.S.;Gauja, E.;Goan, H.S.;Greentree, A.D.;Hallam, T.;Hamilton, A.R.;Hollenberg, L.C.L.;Jamieson, D.N.;Mccallum, J.C.;Milburn, G.J.;O'Brien, J.L.;Oberbeck, L.;Pakes, C.I.;Prawer, S.D.;Reilly, D.J.;Ruess, F.J.;Schofield, S.R.;Simmons, M.Y.;Stanley, F.E.;Starrett, R.P.;Wellard, C.;Yang, C.; Clark, R.G. |
| 臺大學術典藏 |
2019-12-20T01:18:42Z |
Voltage control of exchange coupling in phosphorus doped silicon
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Wellard, C.J.;Hollenberg, L.C.L.;Kettle, L.M.;Goan, H.-S.; Wellard, C.J.; Hollenberg, L.C.L.; Kettle, L.M.; Goan, H.-S.; HSI-SHENG GOAN |
| 臺大學術典藏 |
2019-12-20T01:18:42Z |
Voltage control of exchange coupling in phosphorus doped silicon
|
Wellard, C.J.;Hollenberg, L.C.L.;Kettle, L.M.;Goan, H.-S.; Wellard, C.J.; Hollenberg, L.C.L.; Kettle, L.M.; Goan, H.-S.; HSI-SHENG GOAN |
| 臺大學術典藏 |
2018-09-10T05:20:09Z |
Fast donor based electron spin quantum computing
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Hill, C.D.; Hollenberg, L.C.L.; Fowler, A.G.; Wellard, C.J.; Greentree, A.D.; Goan, H.-S.; Hill, C.D.; Hollenberg, L.C.L.; Fowler, A.G.; Wellard, C.J.; Greentree, A.D.; Goan, H.-S.; HSI-SHENG GOAN |
| 臺大學術典藏 |
2018-09-10T05:20:09Z |
Fast donor based electron spin quantum computing
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Hill, C.D.; Hollenberg, L.C.L.; Fowler, A.G.; Wellard, C.J.; Greentree, A.D.; Goan, H.-S.; Hill, C.D.; Hollenberg, L.C.L.; Fowler, A.G.; Wellard, C.J.; Greentree, A.D.; Goan, H.-S.; HSI-SHENG GOAN |
| 臺大學術典藏 |
2018-09-10T04:51:04Z |
The effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture
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Kettle, L.M.;Goan, H.-S.;Smith, S.C.;Hollenberg, L.C.L.;Wellard, C.J.; Kettle, L.M.; Goan, H.-S.; Smith, S.C.; Hollenberg, L.C.L.; Wellard, C.J.; HSI-SHENG GOAN |
| 臺大學術典藏 |
2018-09-10T04:51:04Z |
The effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture
|
Kettle, L.M.;Goan, H.-S.;Smith, S.C.;Hollenberg, L.C.L.;Wellard, C.J.; Kettle, L.M.; Goan, H.-S.; Smith, S.C.; Hollenberg, L.C.L.; Wellard, C.J.; HSI-SHENG GOAN |
| 臺大學術典藏 |
2018-09-10T04:51:03Z |
Voltage control of exchange coupling in phosphorus doped silicon
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Wellard, C.J.;Hollenberg, L.C.L.;Kettle, L.M.;Goan, H.-S.; Wellard, C.J.; Hollenberg, L.C.L.; Kettle, L.M.; Goan, H.-S.; HSI-SHENG GOAN |
| 臺大學術典藏 |
2018-09-10T04:51:03Z |
Voltage control of exchange coupling in phosphorus doped silicon
|
Wellard, C.J.;Hollenberg, L.C.L.;Kettle, L.M.;Goan, H.-S.; Wellard, C.J.; Hollenberg, L.C.L.; Kettle, L.M.; Goan, H.-S.; HSI-SHENG GOAN |
| 臺大學術典藏 |
2018-09-10T04:30:48Z |
Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces
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Kettle, L.M.;Goan, H.-S.;Smith, S.C.;Wellard, C.J.;Hollenberg, L.C.L.;Pakes, C.I.; Kettle, L.M.; Goan, H.-S.; Smith, S.C.; Wellard, C.J.; Hollenberg, L.C.L.; Pakes, C.I.; HSI-SHENG GOAN |
| 臺大學術典藏 |
2018-09-10T04:30:48Z |
Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces
|
Kettle, L.M.;Goan, H.-S.;Smith, S.C.;Wellard, C.J.;Hollenberg, L.C.L.;Pakes, C.I.; Kettle, L.M.; Goan, H.-S.; Smith, S.C.; Wellard, C.J.; Hollenberg, L.C.L.; Pakes, C.I.; HSI-SHENG GOAN |
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