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Institution Date Title Author
國立成功大學 2008-10-01 Self-assembled InN dots grown on GaN with an In0.08Ga0.92N intermediate layer by metal organic chemical vapor deposition Fu, Y. K.; Kuo, C. H.; Tun, Chun-Ju; Kuo, C. W.; Lai, Wei-Chih; Chi, Gou-Chung; Pan, Ching-Jen; Chen, M. C.; Hong, H. F.; Lan, S. M.
國立臺灣大學 2004 Effects of proton irradiations on GaN-based materials Chang, J. P.; Lin, T. Y.; Hong, H. F.; Gunng, T. C.; Shen, J. L.; Chen, Y. F.

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