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Showing items 1-50 of 752 (16 Page(s) Totally)
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| 臺大學術典藏 |
2022-04-25T06:12:47Z |
Thickness-dependent topological phase transition and Rashba-like preformed topological surface states of α-Sn(001) thin films on InSb(001)
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Chen K.H.M;Lin K.Y;Lien S.W;Huang S.W;Cheng C.K;Lin H.Y;Hsu C.-H;Chang T.-R;Cheng C.-M;Hong M;Kwo J.; Chen K.H.M; Lin K.Y; Lien S.W; Huang S.W; Cheng C.K; Lin H.Y; Hsu C.-H; Chang T.-R; Cheng C.-M; Hong M; Kwo J.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2022-03-22T15:05:12Z |
Attainment of low subthreshold slope in planar inversion-channel InGaAs MOSFET with in situ deposited Al2O3/Y2O3as a gate dielectric
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Young, L. B.; Liu, J.; Lin, Y. H.G.; Wan, H. W.; Chiang, L. S.; Kwo, J.; Hong, M. |
| 臺大學術典藏 |
2022-02-21T23:31:11Z |
Thickness-dependent topological phase transition and Rashba-like preformed topological surface states of α-Sn(001) thin films on InSb(001)
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Chen, K. H.M.; Lin, K. Y.; Lien, S. W.; Huang, S. W.; Cheng, C. K.; HSIN-YI LIN; Hsu, C. H.; Chang, T. R.; Cheng, C. M.; Hong, M.; Kwo, J. |
| 國立成功大學 |
2022 |
Thickness-dependent topological phase transition and Rashba-like preformed topological surface states of α-Sn(001) thin films on InSb(001)
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Chen, K.H.M.;Lin, K.Y.;Lien, S.W.;Huang, S.W.;Cheng, Cheng C.K.;Lin, H.Y.;Hsu, C.-H.;Chang, T.-R.;Cheng, Cheng C.-M.;Hong, M.;Kwo, J. |
| 國立成功大學 |
2022 |
Enormous Berry-Curvature-Based Anomalous Hall Effect in Topological Insulator (Bi,Sb)2Te3 on Ferrimagnetic Europium Iron Garnet beyond 400 K
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Zou, W.-J.;Guo, M.-X.;Wong, J.-F.;Huang, Z.-P.;Chia, J.-M.;Chen, W.-N.;Wang, S.-X.;Lin, K.-Y.;Young, L.B.;Lin, Y.G.;Yahyavi, M.;Wu, C.-T.;Jeng, H.-T.;Lee, S.-F.;Chang, T.-R.;Hong, M.;Kwo, J. |
| 臺大學術典藏 |
2021-07-26T09:44:18Z |
Enhancement of effective dielectric constant using high-temperature mixed and sub-nano-laminated atomic layer deposited Y2O3/Al2O3 on GaAs(001)
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Lin K.Y;Young L.B;Cheng C.K;Chen K.H;Lin Y.H;Wan H.W;Cai R.F;Lo S.C;Li M.Y;Kwo J;Hong M.; Lin K.Y; CHIA-KUEN CHENG et al. |
| 臺大學術典藏 |
2021-07-26T09:44:18Z |
A new stable, crystalline capping material for topological insulators
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Lin H.Y;Cheng C.K;Chen K.H.M;Tseng C.C;Huang S.W;Chang M.T;Tseng S.C;Hong M;Kwo J.; Lin H.Y; Cheng C.K; Chen K.H.M; Tseng C.C; Huang S.W; Chang M.T; Tseng S.C; Hong M; Kwo J.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-07-26T09:44:18Z |
Atomic layer deposited single-crystal hexagonal perovskite YAlO3 epitaxially on GaAs(111)A
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Young L.B;Cheng C.-K;Lu G.-J;Lin K.-Y;Lin Y.-H;Wan H.-W;Li M.-Y;Cai R.-F;Lo S.-C;Hsu C.-H;Kwo J;Hong M.; Young L.B; CHIA-KUEN CHENG et al. |
| 臺大學術典藏 |
2021-07-26T09:44:17Z |
Strongly exchange-coupled and surface-state-modulated magnetization dynamics in Bi2Se3/yttrium iron garnet heterostructures
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Fanchiang Y.T;Chen K.H.M;Tseng C.C;Chen C.C;Cheng C.K;Yang S.R;Wu C.N;Lee S.F;Hong M;Kwo J.; Fanchiang Y.T; Chen K.H.M; Tseng C.C; Chen C.C; Cheng C.K; Yang S.R; Wu C.N; Lee S.F; Hong M; Kwo J.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-07-26T09:44:17Z |
Low-Temperature-Grown Single-Crystal Si Epitaxially on Ge, Followed by Direct Deposition of High-κ Dielectrics-Attainment of Low Interfacial Traps and Highly Reliable Ge MOS
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Wan H.-W;Hong Y.-J;Cheng Y.-T;Cheng C.-K;Hsu C.-H;Wu C.-T;Pi T.-W;Kwo J;Hong M.; Wan H.-W; Hong Y.-J; Cheng Y.-T; Cheng C.-K; Hsu C.-H; Wu C.-T; Pi T.-W; Kwo J; Hong M.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-07-26T09:44:17Z |
High-quality thulium iron garnet films with tunable perpendicular magnetic anisotropy by off-axis sputtering – correlation between magnetic properties and film strain
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Wu C.N;Tseng C.C;Fanchiang Y.T;Cheng C.K;Lin K.Y;Yeh S.L;Yang S.R;Wu C.T;Liu T;Wu M;Hong M;Kwo J.; Wu C.N; CHIA-KUEN CHENG et al. |
| 臺大學術典藏 |
2021-07-26T09:44:17Z |
GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3
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Wan H.W;Lin K.Y;Cheng C.K;Su Y.K;Lee W.C;Hsu C.H;Pi T.W;Kwo J;Hong M.; Wan H.W; Lin K.Y; Cheng C.K; Su Y.K; Lee W.C; Hsu C.H; Pi T.W; Kwo J; Hong M.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-07-26T09:44:16Z |
Van der Waals epitaxy of topological insulator Bi2Se3 on single layer transition metal dichalcogenide MoS2
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Chen K.H.M;Lin H.Y;Yang S.R;Cheng C.K;Zhang X.Q;Cheng C.M;Lee S.F;Hsu C.H;Lee Y.H;Hong M;Kwo J.; Chen K.H.M; CHIA-KUEN CHENG et al. |
| 臺大學術典藏 |
2021-07-21T23:21:09Z |
In situ Y2O3 on p-In0.53Ga0.47As—Attainment of low interfacial trap density and thermal stability at high temperatures
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Lin, Y. H.G.; Wan, H. W.; Young, L. B.; Liu, J.; Cheng, Y. T.; Lin, K. Y.; Hong, Y. J.; Wu, C. T.; Kwo, J.; Hong, M. |
| 臺大學術典藏 |
2021-06-22T02:00:32Z |
Epitaxy from a periodic y–o monolayer: Growth of single-crystal hexagonal YALO3 perovskite
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Hong, M.;Cheng, C.-K.;Lin, Y.-H.;Young, L.B.;Cai, R.-F.;Hsu, C.-H.;Wu, C.-T.;Kwo, J.; Hong, M.; Cheng, C.-K.; Lin, Y.-H.; Young, L.B.; Cai, R.-F.; Hsu, C.-H.; Wu, C.-T.; Kwo, J.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-06-22T02:00:31Z |
Epitaxy of High-Quality Single-Crystal Hexagonal Perovskite YAlO3 on GaAs(111)A Using Laminated Atomic Layer Deposition
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Young, L.B.;Cheng, C.-K.;Lin, K.-Y.;Lin, Y.-H.;Wan, H.-W.;Cai, R.-F.;Lo, S.-C.;Li, M.-Y.;Hsu, C.-H.;Kwo, J.;Hong, M.; Young, L.B.; Cheng, C.-K.; Lin, K.-Y.; Lin, Y.-H.; Wan, H.-W.; Cai, R.-F.; Lo, S.-C.; Li, M.-Y.; Hsu, C.-H.; Kwo, J.; Hong, M.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-06-22T02:00:30Z |
Topological insulator Bi 2 Se 3 films on rare earth iron garnets and their high-quality interfaces
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Chen, C.C.;Chen, K.H.M.;Fanchiang, Y.T.;Tseng, C.C.;Yang, S.R.;Wu, C.N.;Guo, M.X.;Cheng, C.K.;Huang, S.W.;Lin, K.Y.;Wu, C.T.;Hong, M.;Kwo, J.; Chen, C.C.; Chen, K.H.M.; Fanchiang, Y.T.; Tseng, C.C.; Yang, S.R.; Wu, C.N.; Guo, M.X.; Cheng, C.K.; Huang, S.W.; Lin, K.Y.; Wu, C.T.; Hong, M.; Kwo, J.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-06-22T02:00:30Z |
Surface electronic structure of Si1-xGe x(001)-2 × 1: A synchrotron radiation photoemission study
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Cheng, Y.-T.;Wan, H.-W.;Cheng, C.-K.;Cheng, C.-P.;Kwo, J.;Hong, M.;Pi, T.-W.; Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-K.; Cheng, C.-P.; Kwo, J.; Hong, M.; Pi, T.-W.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-06-22T02:00:30Z |
Low-temperature grown single-crystal Si on epi Ge(001)-2 × 1 and its oxidation: Electronic structure study via synchrotron radiation photoemission
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Cheng, Y.-T.;Wan, H.-W.;Cheng, C.-K.;Cheng, C.-P.;Kwo, J.R.;Hong, M.;Pi, T.-W.; Cheng, Y.-T.; Wan, H.-W.; Cheng, C.-K.; Cheng, C.-P.; Kwo, J.R.; Hong, M.; Pi, T.-W.; CHIA-KUEN CHENG |
| 臺大學術典藏 |
2021-04-21T23:30:16Z |
High κ Gate Dielectrics for Compound Semiconductors
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Kwo, J.; Hong, M. |
| 國立交通大學 |
2020-07-01T05:21:21Z |
Exciton Localization of High-Quality ZnO/MgxZn1-x Multiple Quantum Wells on Si (111) with a Y2O3 Buffer Layer
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Liu, Wei-Rein; Huang, Wei-Lun; Wu, Yung-Chi; Lai, Liang-Hsun; Hsu, Chia-Hung; Hsieh, Wen-Feng; Chiang, Tsung-Hung; Wan, H. W.; Hong, M.; Kao, J. |
| 臺大學術典藏 |
2020-04-24T08:53:15Z |
Transmission electron microscopy characterization of HfO 2/GaAs(001) heterostructures grown by molecular beam epitaxy
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Liou, S.C.; Chu, M.-W.; Chen, C.H.; Lee, Y.J.; Chang, P.; Lee, W.C.; Hong, M.; Kwo, J. |
| 臺大學術典藏 |
2020-04-24T08:53:13Z |
Surface exciton polariton in monoclinic HfO2: An electron energy-loss spectroscopy study
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Chen, C.H.; Kwo, J.; Liou, S.C.; Chu, M.-W.; Lee, Y.J.; Hong, M. |
| 臺大學術典藏 |
2020-04-24T08:53:11Z |
High-quality nanothickness single-crystal [formula omitted] film grown on Si(111)
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Gustafsson, T.; Garfunkel, E.; Goncharova, L.V.; Chen, C.H.; Chu, M.-W.; Kwo, J.; Hong, M.; Kortan, A.R.; Chang, P.; Huang, Y.L.; Chen, C.P.; Chou, H.Y.; Lee, H.Y. |
| 臺大學術典藏 |
2020-03-31T08:25:13Z |
Strongly enhanced spin current in topological insulator/ferromagnetic metal heterostructures by spin pumping
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Kwo, J.; Hong, M.; Lee, S. F.; Lin, J. G.; Lin, P. H.; Lin, H. Y.; Hung, H. Y.; Fanchiang, Y. T.; Lin, Y. H.; Wu, C. N. |
| 臺大學術典藏 |
2019-12-27T07:49:59Z |
Magneto-optical study of uranium additions to amorphous Tb xFe1-x
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Albiston, S.D.; MINGHWEI HONG; Gyorgy, E.M.; Van Dover, R.B.; Hong, M.; J.F.; Dillon Jr.; Dillon Jr.;J.F.;Van Dover, R.B.;Hong, M.;Gyorgy, E.M.;Albiston, S.D. |
| 臺大學術典藏 |
2019-12-27T07:49:59Z |
Metallic Multilayers and Epitaxy
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Hong, M.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Novel Ga 2 O 3 (Gd 2 O 3 ) passivation techniques to produce low D it oxide-GaAs interfaces
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Hong, M.; Mannaerts, J.P.; Bower, J.E.; Kwo, J.; Passlack, M.; Hwang, W.-Y.; Tu, L.W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga2O3(Gd2O3) as gate oxide
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Ren, F.; Hong, M.; Hobson, W.S.; Kuo, J.M.; Lothian, J.R.; Mannaerts, J.P.; Kwo, J.; Chu, S.N.G.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy
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Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Thermodynamic and photochemical stability of low interface state density Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy
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Passlack, M.; Hong, M.; Mannaerts, J.P.; Opila, R.L.; Ren, F.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Observation of inversion layers at GA2O3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy
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Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
C-V and G-V characterization of in-situ fabricated Ga2O3-GaAs interfaces for inversion/accumulation device and surface passivation applications
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Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:57Z |
Effect of temperature on Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors
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Ren, F.; Hong, M.; Chu, S.N.G.; Marcus, M.A.; Schurman, M.J.; Baca, A.; Pearton, S.J.; Abernathy, C.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:57Z |
Ga 2 O 3 (Gd 2 O 3 ) as a dielectric insulator for GaAs device applications
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Lay, T.S.; Hong, M.; Mannaerts, J.P.; Liu, C.T.; Kwo, J.; Ren, F.; Marcus, M.A.; Ng, K.K.; Chen, Y.K.; Chou, L.J.; Hsieh, K.C.; Cheng, K.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:57Z |
Insulator passivation of Ino 0.2Ga 0.8As-GaAs surface quantum wells
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Passlack, M.; Hong, M.; Harris, T.D.; Mannaerts, J.P.; Vakhshoori, D.; Schnoes, M.L.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:57Z |
GaAs MOSFET using MBE-grown Ga 2 O 3 (Gd 2 O 3 ) as gate oxide
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Kim, S.-J.; Park, J.-W.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:57Z |
Wet chemical and plasma etching of Ga2O3(Gd2O3)
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Ren, F.; Hong, M.; Mannaerts, J.P.; Lothian, J.R.; Cho, A.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:56Z |
Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis
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Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Kwo, J.; Tsai, H.S.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:56Z |
Passivation of GaAs using (Ga2O3)1 - x(Gd2O3)x, 0?x?1.0 films
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Kwo, J.; Murphy, D.W.; Hong, M.; Opila, R.L.; Mannaerts, J.P.; Sergent, A.M.; Masaitis, R.L.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:56Z |
GaN metal oxide semiconductor field effect transistors
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Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Schurman, M.J.; Lothian, J.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:56Z |
Ga 2 O 3 (Gd 2 O 3 )/GaAs power MOSFETs
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Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Tsai, H.S.; Kwo, J.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:54Z |
New phase formation of Gd2O3films on GaAs(100)
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Kortan, A.R.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Kopylov, N.; Steiner, C.; Bolliger, B.; Erbudak, M.; MINGHWEI HONG; Kortan, A.R.;Hong, M.;Kwo, J.;Mannaerts, J.P.;Krajewski, J.J.;Kopylov, N.;Steiner, C.;Bolliger, B.;Erbudak, M. |
| 臺大學術典藏 |
2019-12-27T07:49:54Z |
C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density
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Lay, T.S.;Liu, W.D.;Hong, M.;Kwo, J.;Mannaerts, J.P.; Lay, T.S.; Liu, W.D.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:54Z |
Properties of high 庥 gate dielectrics Gd2O3 and Y2O3 for Si
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Rosamilia, J.M.; MINGHWEI HONG; Krautter, H.W.; Sergnt, A.M.; Krajewski, J.J.; Boone, T.; Lay, T.S.; Mannaerts, J.P.; Sapjeta, B.J.; Muller, D.A.; Chu, S.N.G.; Opila, R.L.; Chabal, Y.J.; Queeney, K.L.; Hong, M.; Kortan, A.R.; Kwo, J.; Kwo, J.;Hong, M.;Kortan, A.R.;Queeney, K.L.;Chabal, Y.J.;Opila, R.L.;Muller, D.A.;Chu, S.N.G.;Sapjeta, B.J.;Lay, T.S.;Mannaerts, J.P.;Boone, T.;Krautter, H.W.;Krajewski, J.J.;Sergnt, A.M.;Rosamilia, J.M. |
| 臺大學術典藏 |
2019-12-27T07:49:54Z |
Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy
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Lay, T.S.;Huang, K.H.;Hung, W.H.;Hong, M.;Kwo, J.;Mannaerts, J.P.; Lay, T.S.; Huang, K.H.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallisation annealing
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Lay, T.S.;Liu, W.D.;Kwo, J.;Hong, M.;Mannaerts, J.P.; Lay, T.S.; Liu, W.D.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Structure of Gd2O3 films epitaxially grown on GaAs(100) and GaN(0001) surfaces
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Fl?ckiger, T.;Erbudak, M.;Hensch, A.;Weisskopf, Y.;Hong, M.;Kortan, A.R.; Fl?ckiger, T.; Erbudak, M.; Hensch, A.; Weisskopf, Y.; Hong, M.; Kortan, A.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric
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Ng, K.; Bude, J.; MINGHWEI HONG; Yang, B.;Ye, P.D.;Kwo, J.;Frei, M.R.;Gossmann, H.-J.L.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.;Bude, J.; Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces
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Lay, T.S.;Hong, M.;Kwo, J.;Mannaerts, J.P.;Hung, W.H.;Huang, D.J.; Lay, T.S.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Hung, W.H.; Huang, D.J.; MINGHWEI HONG |
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