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"hong m"
Showing items 576-600 of 752 (31 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
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MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Rapid post-metallization annealing effects on high-k Y 2 O 3/Si capacitor
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Lay, TS;Liao, YY;Liu, WD;Lai, YH;Hung, Wei-Hsiu;Kwo, J;Hong, M;Mannaerts, JP; Lay, TS; Liao, YY; Liu, WD; Lai, YH; Hung, Wei-Hsiu; Kwo, J; Hong, M; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Multifilamentary superconducting (NbTa)-Sn composite wire by solid-liquid reaction for possible application above 20 tesla
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Hong, M;Hull, GW;Fuchs, EO;Holthuis, JT; Hong, M; Hull, GW; Fuchs, EO; Holthuis, JT; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Superconducting properties of a liquid-infiltration Nb-Nb3Sn composite formed during a low-temperature reaction
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Hong, M;Hull Jr, GW;Holthuis, JT;Hassenzahl, WV;Hong, JM; Hong, M; Hull Jr, GW; Holthuis, JT; Hassenzahl, WV; Hong, JM; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Schottky barrier height and interfacial state density on oxide-GaAs interface
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Hwang, Jenn-Shyong;Chang, CC;Chen, MF;Chen, CC;Lin, KI;Tang, FC;Hong, M;Kwo, J; Hwang, Jenn-Shyong; Chang, CC; Chen, MF; Chen, CC; Lin, KI; Tang, FC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3) as gate dielectric
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Yang, B;Ye, PD;Kwo, J;Frei, MR;Gossmann, H-JL;Mannaerts, JP;Sergent, M;Hong, M;Ng, K;Bude, J; Yang, B; Ye, PD; Kwo, J; Frei, MR; Gossmann, H-JL; Mannaerts, JP; Sergent, M; Hong, M; Ng, K; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
Magnetic properties of epitaxial single crystal ultrathin Fe3Si films on GaAs (001)
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Liou, Sy\\_Hwang;Malhotra, SS;Shen, JX;Hong, M;Kwo, J;Chen, HS;Mannaerts, JP; Liou, Sy\\_Hwang; Malhotra, SS; Shen, JX; Hong, M; Kwo, J; Chen, HS; Mannaerts, JP; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:34Z |
The microstructure and critical current characteristic of a bronze-processed multifilamentary Nb3Sn superconducting wire
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Wu, IW;Dietderich, DR;Holthuis, JT;Hong, M;Hassenzahl, WV;Morris Jr, JW; Wu, IW; Dietderich, DR; Holthuis, JT; Hong, M; Hassenzahl, WV; Morris Jr, JW; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
Relative intensity noise of vertical cavity surface emitting lasers
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Lau, KY; Smith, JS; Hong, M; Mannaerts, JP; MINGHWEI HONG; Kuchta, Daniel M;Gamelin, J;Walker, JD;Lin, J;Lau, KY;Smith, JS;Hong, M;Mannaerts, JP; Kuchta, Daniel M; Gamelin, J; Walker, JD; Lin, J |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
Multifilamentary Nb-Nb 3 Sn composite by liquid infiltration method: Superconducting, metallurgical, and mechanical properties
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Hong, M;Hull Jr, GW;Holthuis, JT;Hassenzahl, WV;Ekin, JW; Hong, M; Hull Jr, GW; Holthuis, JT; Hassenzahl, WV; Ekin, JW; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:33Z |
NaCl: OH^-color center laser modelocked by a novel bonded saturable Bragg reflector
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Mozdy, EJ;Jaspan, MA;Zhu, Z;Lo, Y-h;Pollock, CR;Bhat, R;Hong, M; Mozdy, EJ; Jaspan, MA; Zhu, Z; Lo, Y-h; Pollock, CR; Bhat, R; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma processing of GaAs and AlGaAs
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Choquette, Kent D;Freund, RS;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC; Choquette, Kent D; Freund, RS; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching
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Hong, M;Freund, RS;Choquette, KD;Luftman, HS;Mannaerts, JP;Wetzel, RC; Hong, M; Freund, RS; Choquette, KD; Luftman, HS; Mannaerts, JP; Wetzel, RC; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
GaAs surface reconstruction obtained using a dry process
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Choquette, Kent D;Hong, M;Luftman, HS;Chu, SNG;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Luftman, HS; Chu, SNG; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy
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Choquette, Kent D;Hong, M;Chu, SNG;Luftman, HS;Mannaerts, JP;Wetzel, RC;Freund, RS; Choquette, Kent D; Hong, M; Chu, SNG; Luftman, HS; Mannaerts, JP; Wetzel, RC; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:32Z |
Vertical-cavity surface-emitting laser diodes fabricated by in situ dry etching and molecular beam epitaxial regrowth
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Choquette, Kent D;Hong, M;Freund, RS;Mannaerts, JP;Wetzel, RC;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Mannaerts, JP; Wetzel, RC; Leibenguth, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Buried heterostructure surface emitting laser diodes fabricated using integrated vacuum processing
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Hong, M;Vakhshoori, D;Grover, LH;Mannaerts, JP;Wynn, JD;Freund, RS; Hong, M; Vakhshoori, D; Grover, LH; Mannaerts, JP; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Vacuum integrated fabrication of vertical-cavity surface emitting lasers
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Choquette, Kent D;Hong, M;Freund, RS;Chu, SNG;Wetzel, RC;Mannaerts, JP;Leibenguth, RE; Choquette, Kent D; Hong, M; Freund, RS; Chu, SNG; Wetzel, RC; Mannaerts, JP; Leibenguth, RE; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes
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Hong, M;Vahkshoori, D;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Hong, M; Vahkshoori, D; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:31Z |
Ultralow timing jitter in electrically gain-switched vertical cavity surface emitting lasers
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Pepeljugoski, P;Lin, J;Gamelin, J;Hong, M;Lau, KY; Pepeljugoski, P; Lin, J; Gamelin, J; Hong, M; Lau, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
980nm Zone Lasers
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Vakhshoori, D;Hong, M;Asom, M;Kojima, K; Vakhshoori, D; Hong, M; Asom, M; Kojima, K; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
980 nm zone lasers [InGaAs quantum wells]
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Vakhshoori, D;Hong, M;Asom, M;Kojima, K;Leibenguth, RE;Wynn, JD; Vakhshoori, D; Hong, M; Asom, M; Kojima, K; Leibenguth, RE; Wynn, JD; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:30Z |
Buried AlGaAs/GaAs/InGaAs laser diodes fabricated by in-situ anisotropic etching and molecular beam epitaxy
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Vakhshoori, D;Hong, M;Grober, LH;Mannaerts, JP;Chu, SNG;Wynn, JD;Freund, RS; Vakhshoori, D; Hong, M; Grober, LH; Mannaerts, JP; Chu, SNG; Wynn, JD; Freund, RS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:29Z |
Direct determination of the stacking order in Gd ${$sub 2$}$ O ${$sub 3$}$ epi-layers on GaAs.
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Clarke, R; others; MINGHWEI HONG; Hong, M; MacHarrie, R; Pitney, J; Stern, E; Walko, D; Cross, J; Yacoby, Y;Sowwan, M;Pindak, R;Cross, J;Walko, D;Stern, E;Pitney, J;MacHarrie, R;Hong, M;Clarke, R;others; Yacoby, Y; Sowwan, M; Pindak, R |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
TRANSMISSION ELECTRON-MICROSCOPY STUDY OF INTERMETALLIC COMPOUND FE3ALXSI1-X EPITAXIALLY GROWN ON GAAS
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Hsieh, YF;Hong, M;Kwo, J;Kortan, AR;Chen, HS;Mannaerts, JP; Hsieh, YF; Hong, M; Kwo, J; Kortan, AR; Chen, HS; Mannaerts, JP; MINGHWEI HONG |
Showing items 576-600 of 752 (31 Page(s) Totally)
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View [10|25|50] records per page
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