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显示项目 66-90 / 752 (共31页)
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机构 日期 题名 作者
臺大學術典藏 2019-12-27T07:49:47Z Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectrics Lee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:47Z III-V MOSFET's with advanced high 庥 dielectrics Hong, M.; Kwo, J.; Chen, C.P.; Chang, Y.C.; Huang, M.L.; Lin, T.D.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:47Z Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As Chang, C.-H.; Chiou, Y.-K.; Chang, Y.-C.; Lee, K.-Y.; Lin, T.-D.; Wu, T.-B.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:47Z Structure of HfO2films epitaxially grown on GaAs (001) Hsu, C.-H.; Chang, P.; Lee, W.C.; Yang, Z.K.; Lee, Y.J.; Hong, M.; Kwo, J.; Huang, C.M.; Lee, H.Y.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:46Z Structural and magnetic properties of epitaxial Fe3Si/GaAs heterostructures MINGHWEI HONG; Kwo, J.; Hsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; Hong, M.
臺大學術典藏 2019-12-27T07:49:46Z Effect of Al incorporation in the thermal stability of atomic-layer- deposited HfO2 for gate dielectric applications Chiou, Y.-K.; Chang, C.-H.; Wang, C.-C.; Lee, K.-Y.; Wu, T.-B.; Kwo, R.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:46Z Structural and electrical characteristics of Ga2 O3 (Gd2 O3) GaAs under high temperature annealing Chen, C.P.; Lee, Y.J.; Chang, Y.C.; MINGHWEI HONG; Lay, T.S.; Yang, Z.K.; Hong, M.; Kwo, J.; Lee, H.Y.
臺大學術典藏 2019-12-27T07:49:45Z Cubic HfO2 doped with y2O2 epitaxial films on GaAs (001) of enhanced dielectric constant Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:45Z MBE grown high-quality Gd2O3/Si(1 1 1) hetero-structure Lin, T.D.; Hang, M.C.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:45Z A novel approach of using a MBE template for ALD growth of high-庥 dielectrics Lee, K.Y.; Lee, W.C.; Huang, M.L.; Chang, C.H.; Lee, Y.J.; Chiu, Y.K.; Wu, T.B.; Hong, M.; Kwo, R.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:45Z MBE grown high 庥 dielectrics Ga2O3(Gd2O3) on GaN Chang, Y.C.; Lee, Y.J.; Chiu, Y.N.; Lin, T.D.; Wu, S.Y.; Chiu, H.C.; Kwo, J.; Wang, Y.H.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:45Z Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3 ) as a gate dielectric Tsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:44Z Local environment surrounding Co in MBE-grown Co-doped Hf O2 thin films probed by EXAFS Soo, Y.L.; Weng, S.C.; Sun, W.H.; Chang, S.L.; Lee, W.C.; Chang, Y.S.; Kwo, J.; Hong, M.; Ablett, J.M.; Kao, C.-C.; Liu, D.G.; Lee, J.F.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:44Z Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O2 films Chang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; Hong, M.; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:44Z Structural and electrical characteristics of atomic layer deposited high 庥 HfO2on GaN Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Huang, M.L.; Lee, K.Y.; Hong, M.; Chiu, Y.N.; Kwo, J.; Wang, Y.H.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:44Z Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineering Hong, M.; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:44Z III-V metal-oxide-semiconductor field-effect transistors with high 庥 dielectrics Hong, M.; Kwo, J.R.; Tsai, P.-C.; Chang, Y.; Huang, M.-L.; Chen, C.-P.; Lin, T.-D.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:43Z Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics You, S.L.; Huang, C.C.; Wang, C.J.; Ho, H.C.; Kwo, J.; Lee, W.C.; Lee, K.Y.; Wu, Y.D.; Lee, Y.J.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:43Z Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:43Z Self-aligned inversion n-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3 (Gd2O 3) dielectric MINGHWEI HONG;Kwo, J.R.;Hong, M.;Chang, Y.-C.;Lin, T.-D.;Chen, C.-P.; Chen, C.-P.; Lin, T.-D.; Chang, Y.-C.; Hong, M.; Kwo, J.R.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:43Z InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation MINGHWEI HONG;Lay, T.S.;Cheng, K.Y.;Liao, C.C.;Kwo, J.;Hong, M.;Lin, T.D.;Lee, K.Y.;Lee, Y.J.;Huang, M.L.;Chang, Y.C.; Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:43Z Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111) Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:42Z 1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors Shiu, K.H.;Chiang, T.H.;Chang, P.;Tung, L.T.;Hong, M.;Kwo, J.;Tsai, W.; Shiu, K.H.; Chiang, T.H.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:42Z Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (1 1 1) using a 帠-Al2O3 buffer layer Liu, W.-R.; Li, Y.-H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:42Z Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters Chang, Y.C.; Huang, M.L.; Lee, K.Y.; Lee, Y.J.; Lin, T.D.; Hong, M.; Kwo, J.; Lay, T.S.; Liao, C.C.; Cheng, K.Y.; MINGHWEI HONG

显示项目 66-90 / 752 (共31页)
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