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"hong m"的相關文件
顯示項目 26-50 / 752 (共31頁)
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| 臺大學術典藏 |
2019-12-27T07:49:59Z |
Magneto-optical study of uranium additions to amorphous Tb xFe1-x
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Albiston, S.D.; MINGHWEI HONG; Gyorgy, E.M.; Van Dover, R.B.; Hong, M.; J.F.; Dillon Jr.; Dillon Jr.;J.F.;Van Dover, R.B.;Hong, M.;Gyorgy, E.M.;Albiston, S.D. |
| 臺大學術典藏 |
2019-12-27T07:49:59Z |
Metallic Multilayers and Epitaxy
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Hong, M.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Novel Ga 2 O 3 (Gd 2 O 3 ) passivation techniques to produce low D it oxide-GaAs interfaces
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Hong, M.; Mannaerts, J.P.; Bower, J.E.; Kwo, J.; Passlack, M.; Hwang, W.-Y.; Tu, L.W.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Demonstration of enhancement-mode p- and n-channel GaAs MOSFETs with Ga2O3(Gd2O3) as gate oxide
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Ren, F.; Hong, M.; Hobson, W.S.; Kuo, J.M.; Lothian, J.R.; Mannaerts, J.P.; Kwo, J.; Chu, S.N.G.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Quasistatic and high frequency capacitance-voltage characterization of Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy
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Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Thermodynamic and photochemical stability of low interface state density Ga2O3-GaAs structures fabricated by in situ molecular beam epitaxy
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Passlack, M.; Hong, M.; Mannaerts, J.P.; Opila, R.L.; Ren, F.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
Observation of inversion layers at GA2O3-GaAs interfaces fabricated by in-situ molecular-beam epitaxy
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Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:58Z |
C-V and G-V characterization of in-situ fabricated Ga2O3-GaAs interfaces for inversion/accumulation device and surface passivation applications
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Passlack, M.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:57Z |
Effect of temperature on Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors
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Ren, F.; Hong, M.; Chu, S.N.G.; Marcus, M.A.; Schurman, M.J.; Baca, A.; Pearton, S.J.; Abernathy, C.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:57Z |
Ga 2 O 3 (Gd 2 O 3 ) as a dielectric insulator for GaAs device applications
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Lay, T.S.; Hong, M.; Mannaerts, J.P.; Liu, C.T.; Kwo, J.; Ren, F.; Marcus, M.A.; Ng, K.K.; Chen, Y.K.; Chou, L.J.; Hsieh, K.C.; Cheng, K.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:57Z |
Insulator passivation of Ino 0.2Ga 0.8As-GaAs surface quantum wells
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Passlack, M.; Hong, M.; Harris, T.D.; Mannaerts, J.P.; Vakhshoori, D.; Schnoes, M.L.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:57Z |
GaAs MOSFET using MBE-grown Ga 2 O 3 (Gd 2 O 3 ) as gate oxide
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Kim, S.-J.; Park, J.-W.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:57Z |
Wet chemical and plasma etching of Ga2O3(Gd2O3)
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Ren, F.; Hong, M.; Mannaerts, J.P.; Lothian, J.R.; Cho, A.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:56Z |
Demonstration of submicron depletion-mode GaAs MOSFET's with negligible drain current drift and hysteresis
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Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Kwo, J.; Tsai, H.S.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:56Z |
Passivation of GaAs using (Ga2O3)1 - x(Gd2O3)x, 0?x?1.0 films
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Kwo, J.; Murphy, D.W.; Hong, M.; Opila, R.L.; Mannaerts, J.P.; Sergent, A.M.; Masaitis, R.L.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:56Z |
GaN metal oxide semiconductor field effect transistors
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Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Schurman, M.J.; Lothian, J.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:56Z |
Ga 2 O 3 (Gd 2 O 3 )/GaAs power MOSFETs
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Wang, Y.C.; Hong, M.; Kuo, J.M.; Mannaerts, J.P.; Tsai, H.S.; Kwo, J.; Krajewski, J.J.; Chen, Y.K.; Cho, A.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:54Z |
New phase formation of Gd2O3films on GaAs(100)
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Kortan, A.R.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Krajewski, J.J.; Kopylov, N.; Steiner, C.; Bolliger, B.; Erbudak, M.; MINGHWEI HONG; Kortan, A.R.;Hong, M.;Kwo, J.;Mannaerts, J.P.;Krajewski, J.J.;Kopylov, N.;Steiner, C.;Bolliger, B.;Erbudak, M. |
| 臺大學術典藏 |
2019-12-27T07:49:54Z |
C-V and G-V characterisation of Ga2O3(Gd2O3)/GaN capacitor with low interface state density
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Lay, T.S.;Liu, W.D.;Hong, M.;Kwo, J.;Mannaerts, J.P.; Lay, T.S.; Liu, W.D.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:54Z |
Properties of high 庥 gate dielectrics Gd2O3 and Y2O3 for Si
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Rosamilia, J.M.; MINGHWEI HONG; Krautter, H.W.; Sergnt, A.M.; Krajewski, J.J.; Boone, T.; Lay, T.S.; Mannaerts, J.P.; Sapjeta, B.J.; Muller, D.A.; Chu, S.N.G.; Opila, R.L.; Chabal, Y.J.; Queeney, K.L.; Hong, M.; Kortan, A.R.; Kwo, J.; Kwo, J.;Hong, M.;Kortan, A.R.;Queeney, K.L.;Chabal, Y.J.;Opila, R.L.;Muller, D.A.;Chu, S.N.G.;Sapjeta, B.J.;Lay, T.S.;Mannaerts, J.P.;Boone, T.;Krautter, H.W.;Krajewski, J.J.;Sergnt, A.M.;Rosamilia, J.M. |
| 臺大學術典藏 |
2019-12-27T07:49:54Z |
Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy
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Lay, T.S.;Huang, K.H.;Hung, W.H.;Hong, M.;Kwo, J.;Mannaerts, J.P.; Lay, T.S.; Huang, K.H.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallisation annealing
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Lay, T.S.;Liu, W.D.;Kwo, J.;Hong, M.;Mannaerts, J.P.; Lay, T.S.; Liu, W.D.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Structure of Gd2O3 films epitaxially grown on GaAs(100) and GaN(0001) surfaces
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Fl?ckiger, T.;Erbudak, M.;Hensch, A.;Weisskopf, Y.;Hong, M.;Kortan, A.R.; Fl?ckiger, T.; Erbudak, M.; Hensch, A.; Weisskopf, Y.; Hong, M.; Kortan, A.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric
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Ng, K.; Bude, J.; MINGHWEI HONG; Yang, B.;Ye, P.D.;Kwo, J.;Frei, M.R.;Gossmann, H.-J.L.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.;Bude, J.; Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces
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Lay, T.S.;Hong, M.;Kwo, J.;Mannaerts, J.P.;Hung, W.H.;Huang, D.J.; Lay, T.S.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Hung, W.H.; Huang, D.J.; MINGHWEI HONG |
顯示項目 26-50 / 752 (共31頁)
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