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Showing items 151-175 of 752 (31 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:28Z |
Strong crystal anisotropy of magneto-transport property in Fe3Si epitaxial film
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Hung, H.Y.;Huang, S.Y.;Chang, P.;Lin, W.C.;Liu, Y.C.;Lee, S.F.;Hong, M.;Kwo, J.; Hung, H.Y.; Huang, S.Y.; Chang, P.; Lin, W.C.; Liu, Y.C.; Lee, S.F.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:28Z |
Low interfacial density of states around midgap in MBE-Ga2O 3(Gd2O3)/In0.2Ga0.8As
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Lin, C.A.;Chiu, H.C.;Chiang, T.H.;Chang, Y.C.;Lin, T.D.;Kwo, J.;Wang, W.-E.;Dekoster, J.;Heyns, M.;Hong, M.; Lin, C.A.; Chiu, H.C.; Chiang, T.H.; Chang, Y.C.; Lin, T.D.; Kwo, J.; Wang, W.-E.; Dekoster, J.; Heyns, M.; Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:27Z |
The growth of an epitaxial ZnO film on Si(111) with a Gd2O 3(Ga2O3) buffer layer
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Lin, B.H.;Liu, W.R.;Yang, S.;Kuo, C.C.;Hsu, C.-H.;Hsieh, W.F.;Lee, W.C.;Lee, Y.J.;Hong, M.;Kwo, J.; Lin, B.H.; Liu, W.R.; Yang, S.; Kuo, C.C.; Hsu, C.-H.; Hsieh, W.F.; Lee, W.C.; Lee, Y.J.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:27Z |
Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics
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Chang, Y.C.;Huang, M.L.;Chang, Y.H.;Lee, Y.J.;Chiu, H.C.;Kwo, J.;Hong, M.; Chang, Y.C.; Huang, M.L.; Chang, Y.H.; Lee, Y.J.; Chiu, H.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:27Z |
In situ atomic layer deposition and synchrotron-radiation photoemission study of Al2O3 on pristine n-GaAs(0 0 1)-4 ? 6 surface
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Chang, Y.H.;Huang, M.L.;Chang, P.;Shen, J.Y.;Chen, B.R.;Hsu, C.L.;Pi, T.W.;Hong, M.;Kwo, J.; Chang, Y.H.; Huang, M.L.; Chang, P.; Shen, J.Y.; Chen, B.R.; Hsu, C.L.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:27Z |
Direct measurement of interfacial structure in epitaxial Gd 2O3 on GaAs (0 0 1) using scanning tunneling microscopy
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Shen, J.Y.; Huang, M.L.; Lee, W.C.; Chang, P.; Chiang, T.H.; Hong, M.; Kwo, J.; MINGHWEI HONG; Huang, B.C.; Chiu, Y.P.; Shih, M.C.; Chiu, Y.P.;Shih, M.C.;Huang, B.C.;Shen, J.Y.;Huang, M.L.;Lee, W.C.;Chang, P.;Chiang, T.H.;Hong, M.;Kwo, J. |
| 臺大學術典藏 |
2019-12-27T07:49:27Z |
MBE - Enabling technology beyond Si CMOS
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Chang, P.;Lee, W.C.;Lin, T.D.;Hsu, C.H.;Kwo, J.;Hong, M.; Chang, P.; Lee, W.C.; Lin, T.D.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Atomic-scale determination of band offsets at the Gd2O 3/GaAs (100) hetero-interface using scanning tunneling spectroscopy
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Chiu, Y.P.;Huang, B.C.;Shih, M.C.;Shen, J.Y.;Chang, P.;Chang, C.S.;Huang, M.L.;Tsai, M.-H.;Hong, M.;Kwo, J.; Chiu, Y.P.; Huang, B.C.; Shih, M.C.; Shen, J.Y.; Chang, P.; Chang, C.S.; Huang, M.L.; Tsai, M.-H.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Self-aligned inversion-channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as gate dielectrics
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Chang, P.;Chiu, H.-C.;Lin, T.-D.;Huang, M.-L.;Wen-Hsin Chang;Wu, S.-Y.;Wu, K.-H.;Hong, M.;Kwo, J.; Chang, P.; Chiu, H.-C.; Lin, T.-D.; Huang, M.-L.; Wen-Hsin Chang, Wu, S.-Y.; Wu, K.-H.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Achieving a low interfacial density of states with a flat distribution in high-K Ga2O3(Gd2O3) directly deposited on Ge
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Lin, C.;Lin, H.;Chiang, T.;Chu, R.;Chu, L.;Lin, T.;Chang, Y.;Wang, W.-E.;Kwo, J.R.;Hong, M.; Lin, C.; Lin, H.; Chiang, T.; Chu, R.; Chu, L.; Lin, T.; Chang, Y.; Wang, W.-E.; Kwo, J.R.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
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Merckling, C.;Chang, Y.C.;Lu, C.Y.;Penaud, J.;Brammertz, G.;Scarrozza, M.;Pourtois, G.;Kwo, J.;Hong, M.;Dekoster, J.;Meuris, M.;Heyns, M.;Caymax, M.; Merckling, C.; Chang, Y.C.; Lu, C.Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:25Z |
Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics
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Chu, L.K.;Merckling, C.;Alian, A.;Dekoster, J.;Kwo, J.;Hong, M.;Caymax, M.;Heyns, M.; Chu, L.K.; Merckling, C.; Alian, A.; Dekoster, J.; Kwo, J.; Hong, M.; Caymax, M.; Heyns, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:24Z |
Surface-atom core-level shift in GaAs(111)A-2
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MINGHWEI HONG; Kwo, J.; Hong, M.; Wertheim, G.K.; Chiang, T.-H.; Huang, M.-L.; Chen, B.-R.; Pi, T.-W. |
| 臺大學術典藏 |
2019-12-27T07:49:24Z |
Realization of high-quality HfO 2 on In 0.53Ga 0.47As by in-situ atomic-layer-deposition
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Lin, T.D.; Chang, Y.H.; Lin, C.A.; Huang, M.L.; Lee, W.C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:24Z |
The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a 帠-Al 2O 3 buffer layer
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Liu, W.-R.;Lin, B.H.;Yang, S.;Kuo, C.C.;Li, Y.-H.;Hsu, C.-H.;Hsieh, W.F.;Lee, W.C.;Hong, M.;Kwo, J.; Liu, W.-R.; Lin, B.H.; Yang, S.; Kuo, C.C.; Li, Y.-H.; Hsu, C.-H.; Hsieh, W.F.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Growth mechanism of atomic layer deposited Al2O3on GaAs(001)-4 ? 6 surface with trimethylaluminum and water as precursors
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Huang, M.L.; Chang, Y.H.; Lin, T.D.; Lin, H.Y.; Liu, Y.T.; Pi, T.W.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Effective passivation of In 0.2Ga 0.8As by HfO 2 surpassing Al 2O 3 via in-situ atomic layer deposition
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Liu, Y.T.; Chiang, T.H.; Lin, H.Y.; Huang, M.L.; Lin, T.D.; Pi, T.W.; Kwo, J.; Hong, M.; MINGHWEI HONG; Lin, C.A.; Chang, Y.H.; Chang, Y.H.;Lin, C.A.;Liu, Y.T.;Chiang, T.H.;Lin, H.Y.;Huang, M.L.;Lin, T.D.;Pi, T.W.;Kwo, J.;Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Room temperature ferromagnetic behavior in cluster free, Co doped Y 2O 3 dilute magnetic oxide films
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Wu, C.N.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Wu, T.S.; Soo, Y.L.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Correlation between oxygen vacancies and magnetism in Mn-doped Y 2 O 3 nanocrystals investigated by defect engineering techniques
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Wu, T.S.;Chen, Y.C.;Shiu, Y.F.;Peng, H.J.;Chang, S.L.;Lee, H.Y.;Chu, P.P.;Hsu, C.W.;Chou, L.J.;Pao, C.W.;Lee, J.F.;Kwo, J.;Hong, M.;Soo, Y.L.; Wu, T.S.; Chen, Y.C.; Shiu, Y.F.; Peng, H.J.; Chang, S.L.; Lee, H.Y.; Chu, P.P.; Hsu, C.W.; Chou, L.J.; Pao, C.W.; Lee, J.F.; Kwo, J.; Hong, M.; Soo, Y.L.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:23Z |
Metal oxide semiconductor device studies of molecular-beam-deposited Al 2O 3/InP heterostructures with various surface orientations (001), (110), and (111)
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Chu, L.-K.; Merckling, C.; Dekoster, J.; Kwo, J.R.; Hong, M.; Caymax, M.; Heyns, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:22Z |
Ferromagnetism in cluster free, transition metal doped high 庥 dilute magnetic oxides: Films and nanocrystals
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Wu, C.N.;Wu, T.S.;Huang, S.Y.;Lee, W.C.;Chang, Y.H.;Soo, Y.L.;Hong, M.;Kwo, J.; Wu, C.N.; Wu, T.S.; Huang, S.Y.; Lee, W.C.; Chang, Y.H.; Soo, Y.L.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:22Z |
Detection of inverse spin Hall effect in epitaxial ferromagnetic Fe 3Si films with normal metals Au and Pt
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Hung, H.Y.;Luo, G.Y.;Chiu, Y.C.;Chang, P.;Lee, W.C.;Lin, J.G.;Lee, S.F.;Hong, M.;Kwo, J.; Hung, H.Y.; Luo, G.Y.; Chiu, Y.C.; Chang, P.; Lee, W.C.; Lin, J.G.; Lee, S.F.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:22Z |
Phase transformation of molecular beam epitaxy-grown nanometer-thick Gd2O3 and Y2O3 on GaN
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Chang, P.; Hsu, C.-H.; Huang, T.-S.; Kwo, J.R.; Hong, M.; MINGHWEI HONG; Lee, Y.-J.; Chang, W.-H.;Wu, S.-Y.;Lee, C.-H.;Lai, T.-Y.;Lee, Y.-J.;Chang, P.;Hsu, C.-H.;Huang, T.-S.;Kwo, J.R.;Hong, M.; Chang, W.-H.; Wu, S.-Y.; Lee, C.-H.; Lai, T.-Y. |
| 臺大學術典藏 |
2019-12-27T07:49:22Z |
Inversion-channel GaAs(100) metal-oxide-semiconductor field-effect- transistors using molecular beam deposited Al2O3as a gate dielectric on different reconstructed surfaces
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Chang, Y.C.;Chang, W.H.;Merckling, C.;Kwo, J.;Hong, M.; Chang, Y.C.; Chang, W.H.; Merckling, C.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:22Z |
Vertical-cavity and randomly scattered lasing from different thicknesses of epitaxial ZnO films grown on Y2O3-buffered Si (111)
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Kuo, C.C.;Liu, W.-R.;Lin, B.H.;Hsieh, W.F.;Hsu, C.-H.;Lee, W.C.;Hong, M.;Kwo, J.; Kuo, C.C.; Liu, W.-R.; Lin, B.H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG |
Showing items 151-175 of 752 (31 Page(s) Totally)
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