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Showing items 46-70 of 752 (31 Page(s) Totally)
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| 臺大學術典藏 |
2019-12-27T07:49:54Z |
Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy
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Lay, T.S.;Huang, K.H.;Hung, W.H.;Hong, M.;Kwo, J.;Mannaerts, J.P.; Lay, T.S.; Huang, K.H.; Hung, W.H.; Hong, M.; Kwo, J.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Electrical characteristics of ultrathin Pt/Y2O3/Si capacitor with rapid post-metallisation annealing
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Lay, T.S.;Liu, W.D.;Kwo, J.;Hong, M.;Mannaerts, J.P.; Lay, T.S.; Liu, W.D.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Structure of Gd2O3 films epitaxially grown on GaAs(100) and GaN(0001) surfaces
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Fl?ckiger, T.;Erbudak, M.;Hensch, A.;Weisskopf, Y.;Hong, M.;Kortan, A.R.; Fl?ckiger, T.; Erbudak, M.; Hensch, A.; Weisskopf, Y.; Hong, M.; Kortan, A.R.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Impact of metal/oxide interface on DC and RF performance of D-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric
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Ng, K.; Bude, J.; MINGHWEI HONG; Yang, B.;Ye, P.D.;Kwo, J.;Frei, M.R.;Gossmann, H.-J.L.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.;Bude, J.; Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:53Z |
Energy-band parameters at the GaAs- and GaN-Ga2O3(Gd2O3) interfaces
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Lay, T.S.;Hong, M.;Kwo, J.;Mannaerts, J.P.;Hung, W.H.;Huang, D.J.; Lay, T.S.; Hong, M.; Kwo, J.; Mannaerts, J.P.; Hung, W.H.; Huang, D.J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:51Z |
Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga 2 O 3 (Gd 2 O 3 ) as gate dielectric
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Yang, B.;Ye, P.D.;Kwo, J.;Frei, M.R.;Gossmann, H.-J.L.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.;Bude, J.; Yang, B.; Ye, P.D.; Kwo, J.; Frei, M.R.; Gossmann, H.-J.L.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.; Bude, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:51Z |
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
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Ye, P.D.;Wilk, G.D.;Kwo, J.;Yang, B.;Gossmann, H.-J.L.;Frei, M.;Chu, S.N.G.;Mannaerts, J.P.;Sergent, M.;Hong, M.;Ng, K.K.;Bude, J.; Ye, P.D.; Wilk, G.D.; Kwo, J.; Yang, B.; Gossmann, H.-J.L.; Frei, M.; Chu, S.N.G.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:51Z |
Advances in high 庥 gate dielectrics for Si and III-V semiconductors
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Kwo, J.;Hong, M.;Busch, B.;Muller, D.A.;Chabal, Y.J.;Kortan, A.R.;Mannaerts, J.P.;Yang, B.;Ye, P.;Gossmann, H.;Sergent, A.M.;Ng, K.K.;Bude, J.;Schulte, W.H.;Garfunkel, E.;Gustafsson, T.; Kwo, J.; Hong, M.; Busch, B.; Muller, D.A.; Chabal, Y.J.; Kortan, A.R.; Mannaerts, J.P.; Yang, B.; Ye, P.; Gossmann, H.; Sergent, A.M.; Ng, K.K.; Bude, J.; Schulte, W.H.; Garfunkel, E.; Gustafsson, T.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
Depth-profile study of the electronic structures at Ga2O 3(Gd2O3) and Gd2O3-GaN interfaces by X-ray photoelectron spectroscopy
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MINGHWEI HONG; Mannaerts, J.P.; Kwo, J.; Hung, W.H.; Hong, M.; Liao, Y.Y.; Lay, T.S.; Mannaerts, J.P.; Kwo, J.; Hong, M.; Hung, W.H.; Lay, T.S.; Liao, Y.Y. |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
Thin single-crystal Sc2O3 films epitaxially grown on Si (1 1 1) - Structure and electrical properties
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Chen, C.P.; Hong, M.; Kwo, J.; Cheng, H.M.; Huang, Y.L.; Lin, S.Y.; Chi, J.; Lee, H.Y.; Hsieh, Y.F.; Mannaerts, J.P.; Chen, C.P.; Hong, M.; Kwo, J.; Cheng, H.M.; Huang, Y.L.; Lin, S.Y.; Chi, J.; Lee, H.Y.; Hsieh, Y.F.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
MBE-grown high 庥 gate dielectrics of HfO 2 and (Hf-Al)O 2 for Si and III-V semiconductors nano-electronics
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Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; Lee, W.C.; Lee, Y.J.; Wu, Y.D.; Chang, P.; Huang, Y.L.; Hsu, Y.L.; Mannaerts, J.P.; Lo, R.L.; Chen, F.R.; Maikap, S.; Lee, L.S.; Hsieh, W.Y.; Tsai, M.J.; Lin, S.Y.; Gustffson, T.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
GaAs-based metal-oxide semiconductor field-effect transistors with Al 2 O 3 gate dielectrics grown by atomic layer deposition
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Ye, P.D.; Wilk, G.D.; Yang, B.; Kwo, J.; Gossmann, H.-J.L.; Frei, M.; Mannaerts, J.P.; Sergent, M.; Hong, M.; Ng, K.K.; Bude, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:50Z |
Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor
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Lay, T.S.;Liao, Y.Y.;Liu, W.D.;Lai, Y.H.;Hung, W.H.;Kwo, J.;Hong, M.;Mannaerts, J.P.; Lay, T.S.; Liao, Y.Y.; Liu, W.D.; Lai, Y.H.; Hung, W.H.; Kwo, J.; Hong, M.; Mannaerts, J.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:49Z |
High-quality thin single-crystal 帠-Al 2 O 3 films grown on Si (111)
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Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; Wu, S.Y.; Hong, M.; Kortan, A.R.; Kwo, J.; Mannaerts, J.P.; Lee, W.C.; Huang, Y.L.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:49Z |
Thermodynamic stability of Ga 2 O 3 (Gd 2 O 3 ) GaAs interface
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Huang, Y.L.; Chang, P.; Yang, Z.K.; Lee, Y.J.; Lee, H.Y.; Liu, H.J.; Kwo, J.; Mannaerts, J.P.; Hong, M.; Huang, Y.L.; Chang, P.; Yang, Z.K.; Lee, Y.J.; Lee, H.Y.; Liu, H.J.; Kwo, J.; Mannaerts, J.P.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:48Z |
Measuring interface strains at the atomic resolution in depth using x-ray Bragg-surface diffraction
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Sun, W.C.; Chang, H.C.; Wu, B.K.; Chen, Y.R.; Chu, C.H.; Chang, S.L.; Hong, M.; Tang, M.T.; Stetsko, Y.P.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:48Z |
Structure of Sc 2O 3 films epitaxially grown on 帢-Al 2O 3 (0001)
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Kortan, A.R.; Kopylov, N.; Kwo, J.; Hong, M.; Chen, C.P.; Mannaerts, J.P.; Liou, S.H.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:48Z |
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
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Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:48Z |
Advanced high 庥 dielectrics for nano-electronics - Science and technologies
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MINGHWEI HONG; Kwo, J.; Hong, M.; Kwo, J.; Hong, M. |
| 臺大學術典藏 |
2019-12-27T07:49:48Z |
Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy
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Lay, T.S.; Chang, S.C.; Din, G.J.; Yeh, C.C.; Hung, W.H.; Lee, W.G.; Kwo, J.; Hong, M.; Lay, T.S.; Chang, S.C.; Din, G.J.; Yeh, C.C.; Hung, W.H.; Lee, W.G.; Kwo, J.; Hong, M.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:47Z |
Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectrics
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Lee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:47Z |
III-V MOSFET's with advanced high 庥 dielectrics
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Hong, M.; Kwo, J.; Chen, C.P.; Chang, Y.C.; Huang, M.L.; Lin, T.D.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:47Z |
Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
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Chang, C.-H.; Chiou, Y.-K.; Chang, Y.-C.; Lee, K.-Y.; Lin, T.-D.; Wu, T.-B.; Hong, M.; Kwo, J.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:47Z |
Structure of HfO2films epitaxially grown on GaAs (001)
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Hsu, C.-H.; Chang, P.; Lee, W.C.; Yang, Z.K.; Lee, Y.J.; Hong, M.; Kwo, J.; Huang, C.M.; Lee, H.Y.; MINGHWEI HONG |
| 臺大學術典藏 |
2019-12-27T07:49:46Z |
Structural and magnetic properties of epitaxial Fe3Si/GaAs heterostructures
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MINGHWEI HONG; Kwo, J.; Hsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; Hong, M. |
Showing items 46-70 of 752 (31 Page(s) Totally)
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