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Showing items 61-85 of 752 (31 Page(s) Totally) << < 1 2 3 4 5 6 7 8 9 10 > >> View [10|25|50] records per page
臺大學術典藏 |
2019-12-27T07:49:48Z |
Measuring interface strains at the atomic resolution in depth using x-ray Bragg-surface diffraction
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Sun, W.C.; Chang, H.C.; Wu, B.K.; Chen, Y.R.; Chu, C.H.; Chang, S.L.; Hong, M.; Tang, M.T.; Stetsko, Y.P.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:48Z |
Structure of Sc 2O 3 films epitaxially grown on 帢-Al 2O 3 (0001)
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Kortan, A.R.; Kopylov, N.; Kwo, J.; Hong, M.; Chen, C.P.; Mannaerts, J.P.; Liou, S.H.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:48Z |
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
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Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; Huang, M.L.; Chang, Y.C.; Chang, C.H.; Lee, Y.J.; Chang, P.; Kwo, J.; Wu, T.B.; Hong, M.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:48Z |
Advanced high 庥 dielectrics for nano-electronics - Science and technologies
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MINGHWEI HONG; Kwo, J.; Hong, M.; Kwo, J.; Hong, M. |
臺大學術典藏 |
2019-12-27T07:49:48Z |
Depth profiling the electronic structures at HfO2/Si interface grown by molecular beam epitaxy
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Lay, T.S.; Chang, S.C.; Din, G.J.; Yeh, C.C.; Hung, W.H.; Lee, W.G.; Kwo, J.; Hong, M.; Lay, T.S.; Chang, S.C.; Din, G.J.; Yeh, C.C.; Hung, W.H.; Lee, W.G.; Kwo, J.; Hong, M.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:47Z |
Molecular beam epitaxy grown template for subsequent atomic layer deposition of high 庥 dielectrics
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Lee, K.Y.; Lee, W.C.; Lee, Y.J.; Huang, M.L.; Chang, C.H.; Wu, T.B.; Hong, M.; Kwo, J.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:47Z |
III-V MOSFET's with advanced high 庥 dielectrics
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Hong, M.; Kwo, J.; Chen, C.P.; Chang, Y.C.; Huang, M.L.; Lin, T.D.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:47Z |
Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
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Chang, C.-H.; Chiou, Y.-K.; Chang, Y.-C.; Lee, K.-Y.; Lin, T.-D.; Wu, T.-B.; Hong, M.; Kwo, J.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:47Z |
Structure of HfO2films epitaxially grown on GaAs (001)
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Hsu, C.-H.; Chang, P.; Lee, W.C.; Yang, Z.K.; Lee, Y.J.; Hong, M.; Kwo, J.; Huang, C.M.; Lee, H.Y.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:46Z |
Structural and magnetic properties of epitaxial Fe3Si/GaAs heterostructures
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MINGHWEI HONG; Kwo, J.; Hsu, Y.L.; Lee, Y.J.; Chang, Y.H.; Huang, M.L.; Chiu, Y.N.; Ho, C.C.; Chang, P.; Hsu, C.H.; Hong, M. |
臺大學術典藏 |
2019-12-27T07:49:46Z |
Effect of Al incorporation in the thermal stability of atomic-layer- deposited HfO2 for gate dielectric applications
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Chiou, Y.-K.; Chang, C.-H.; Wang, C.-C.; Lee, K.-Y.; Wu, T.-B.; Kwo, R.; Hong, M.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:46Z |
Structural and electrical characteristics of Ga2 O3 (Gd2 O3) GaAs under high temperature annealing
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Chen, C.P.; Lee, Y.J.; Chang, Y.C.; MINGHWEI HONG; Lay, T.S.; Yang, Z.K.; Hong, M.; Kwo, J.; Lee, H.Y. |
臺大學術典藏 |
2019-12-27T07:49:45Z |
Cubic HfO2 doped with y2O2 epitaxial films on GaAs (001) of enhanced dielectric constant
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Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:45Z |
MBE grown high-quality Gd2O3/Si(1 1 1) hetero-structure
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Lin, T.D.; Hang, M.C.; Hsu, C.H.; Kwo, J.; Hong, M.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:45Z |
A novel approach of using a MBE template for ALD growth of high-庥 dielectrics
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Lee, K.Y.; Lee, W.C.; Huang, M.L.; Chang, C.H.; Lee, Y.J.; Chiu, Y.K.; Wu, T.B.; Hong, M.; Kwo, R.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:45Z |
MBE grown high 庥 dielectrics Ga2O3(Gd2O3) on GaN
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Chang, Y.C.; Lee, Y.J.; Chiu, Y.N.; Lin, T.D.; Wu, S.Y.; Chiu, H.C.; Kwo, J.; Wang, Y.H.; Hong, M.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:45Z |
Depletion-mode GaAs-based MOSFET with Ga 2 O 3 (Gd 2 O 3 ) as a gate dielectric
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Tsai, P.J.; Chu, L.K.; Chen, Y.W.; Chiu, Y.N.; Yang, H.P.; Chang, P.; Kwo, J.; Chi, J.; Hong, M.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:44Z |
Local environment surrounding Co in MBE-grown Co-doped Hf O2 thin films probed by EXAFS
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Soo, Y.L.; Weng, S.C.; Sun, W.H.; Chang, S.L.; Lee, W.C.; Chang, Y.S.; Kwo, J.; Hong, M.; Ablett, J.M.; Kao, C.-C.; Liu, D.G.; Lee, J.F.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:44Z |
Observation of room temperature ferromagnetic behavior in cluster-free, Co doped Hf O2 films
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Chang, Y.H.; Soo, Y.L.; Lee, W.C.; Huang, M.L.; Lee, Y.J.; Weng, S.C.; Sun, W.H.; Hong, M.; Kwo, J.; Lee, S.F.; Ablett, J.M.; Kao, C.-C.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:44Z |
Structural and electrical characteristics of atomic layer deposited high 庥 HfO2on GaN
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Chang, Y.C.; Chiu, H.C.; Lee, Y.J.; Huang, M.L.; Lee, K.Y.; Hong, M.; Chiu, Y.N.; Kwo, J.; Wang, Y.H.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:44Z |
Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineering
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Hong, M.; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:44Z |
III-V metal-oxide-semiconductor field-effect transistors with high 庥 dielectrics
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Hong, M.; Kwo, J.R.; Tsai, P.-C.; Chang, Y.; Huang, M.-L.; Chen, C.-P.; Lin, T.-D.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:43Z |
Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics
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You, S.L.; Huang, C.C.; Wang, C.J.; Ho, H.C.; Kwo, J.; Lee, W.C.; Lee, K.Y.; Wu, Y.D.; Lee, Y.J.; Hong, M.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:43Z |
Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
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Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG |
臺大學術典藏 |
2019-12-27T07:49:43Z |
Self-aligned inversion n-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3 (Gd2O 3) dielectric
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MINGHWEI HONG;Kwo, J.R.;Hong, M.;Chang, Y.-C.;Lin, T.-D.;Chen, C.-P.; Chen, C.-P.; Lin, T.-D.; Chang, Y.-C.; Hong, M.; Kwo, J.R.; MINGHWEI HONG |
Showing items 61-85 of 752 (31 Page(s) Totally) << < 1 2 3 4 5 6 7 8 9 10 > >> View [10|25|50] records per page
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