臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

???ui.leftmenu.abouttair???
	???ui.leftmenu.explanation???

???ui.leftmenu.bartitle???
	Repositories
	Author
	Title
	Date
	???ui.leftmenu.statisticschart???
	???ui.leftmenu.realtimefacts???
	???ui.leftmenu.trend???

???index.news???
	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

???ui.leftmenu.copyrighttitle???
	???ui.leftmenu.copyrightpublisher???
	???ui.leftmenu.copyrightconference???

???ui.leftmenu.link???
	機構典藏計畫網站
	ROAR
	OpenDOAR
	SHERPA
	OAIster
	JAIRO
	Ira
	DSPACE
	RWWR
	臺大學術典藏NTU Scholars

"hong m"???jsp.browse.items-by-author.description???

???jsp.browse.items-by-author.back???
???jsp.browse.items-by-author.order1???	???jsp.browse.items-by-author.order2???

Showing items 81-105 of 752 (31 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
View [10|25|50] records per page

Institution	Date	Title	Author
臺大學術典藏	2019-12-27T07:49:44Z	Defining new frontiers in electronic devices with high 庥 dielectrics and interfacial engineering	Hong, M.; Lee, W.C.; Huang, M.L.; Chang, Y.C.; Lin, T.D.; Lee, Y.J.; Kwo, J.; Hsu, C.H.; Lee, H.Y.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:44Z	III-V metal-oxide-semiconductor field-effect transistors with high 庥 dielectrics	Hong, M.; Kwo, J.R.; Tsai, P.-C.; Chang, Y.; Huang, M.-L.; Chen, C.-P.; Lin, T.-D.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:43Z	Inelastic electron tunneling spectroscopy study of metal-oxide- semiconductor diodes based on high-庥 gate dielectrics	You, S.L.; Huang, C.C.; Wang, C.J.; Ho, H.C.; Kwo, J.; Lee, W.C.; Lee, K.Y.; Wu, Y.D.; Lee, Y.J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:43Z	Ga2 O3 (Gd2 O3) Si3 N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion	Zheng, J.F.; Tsai, W.; Lin, T.D.; Lee, Y.J.; Chen, C.P.; Hong, M.; Kwo, J.; Cui, S.; Ma, T.P.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:43Z	Self-aligned inversion n-channel In0.2Ga0.8As/GaAs MOSFET with TiN gate and Ga2O3 (Gd2O 3) dielectric	MINGHWEI HONG;Kwo, J.R.;Hong, M.;Chang, Y.-C.;Lin, T.-D.;Chen, C.-P.; Chen, C.-P.; Lin, T.-D.; Chang, Y.-C.; Hong, M.; Kwo, J.R.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:43Z	InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation	MINGHWEI HONG;Lay, T.S.;Cheng, K.Y.;Liao, C.C.;Kwo, J.;Hong, M.;Lin, T.D.;Lee, K.Y.;Lee, Y.J.;Huang, M.L.;Chang, Y.C.; Chang, Y.C.; Huang, M.L.; Lee, Y.J.; Lee, K.Y.; Lin, T.D.; Hong, M.; Kwo, J.; Liao, C.C.; Cheng, K.Y.; Lay, T.S.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:43Z	Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)	Yang, Z.K.; Lee, W.C.; Lee, Y.J.; Chang, P.; Huang, M.L.; Hong, M.; Yu, K.L.; Tang, M.-T.; Lin, B.-H.; Hsu, C.-H.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	1 nm equivalent oxide thickness in Ga2 O3 (Gd2 O3) In0.2 Ga0.8 As metal-oxide-semiconductor capacitors	Shiu, K.H.;Chiang, T.H.;Chang, P.;Tung, L.T.;Hong, M.;Kwo, J.;Tsai, W.; Shiu, K.H.; Chiang, T.H.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	Correlation between crystal structure and photoluminescence for epitaxial ZnO on Si (1 1 1) using a 帠-Al2O3 buffer layer	Liu, W.-R.; Li, Y.-H.; Hsieh, W.F.; Hsu, C.-H.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	Atomic-layer-deposited Hf O2 on In0.53 Ga0.47 As: Passivation and energy-band parameters	Chang, Y.C.; Huang, M.L.; Lee, K.Y.; Lee, Y.J.; Lin, T.D.; Hong, M.; Kwo, J.; Lay, T.S.; Liao, C.C.; Cheng, K.Y.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	Nanometer thick single crystal Y2 O3 films epitaxially grown on Si (111) with structures approaching perfection	Nieh, C.W.; Lee, Y.J.; Lee, W.C.; Yang, Z.K.; Kortan, A.R.; Hong, M.; Kwo, J.; Hsu, C.-H.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:42Z	Time dependent preferential sputtering in the HfO2 layer on Si(100)	Chang, S.J.;Lee, W.C.;Hwang, J.;Hong, M.;Kwo, J.; Chang, S.J.; Lee, W.C.; Hwang, J.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:41Z	Oxide scalability in Al2 O3 Ga2 O3 (Gd2 O3) In0.20 Ga0.80 AsGaAs heterostructures	Shiu, K.H.; Chiang, C.H.; Lee, Y.J.; Lee, W.C.; Chang, P.; Tung, L.T.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:41Z	Growth and structural characteristics of GaN/AIN/nanothick 帠-Al 2O3/Si(111)	Lee, W.C.; Lee, Y.J.; Tung, L.T.; Wu, S.Y.; Lee, C.H.; Hong, M.; Ng, H.M.; Kwo, J.; Hsu, C.H.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:41Z	Transmission electron microscopy characterization of HfO 2/GaAs(001) heterostructures grown by molecular beam epitaxy	Liou, S.C.; Chu, M.-W.; Chen, C.H.; Lee, Y.J.; Chang, P.; Lee, W.C.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:40Z	Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2 O3 as gate dielectric	Lee, C.H.; Shiu, K.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG; Tung, L.T.; Chiu, H.C.; Chang, W.H.; Chang, Y.C.
臺大學術典藏	2019-12-27T07:49:40Z	High-performance self-aligned inversion-channel In0.53 Ga0.47 As metal-oxide-semiconductor field-effect-transistor with Al2 O3 Ga2 O3 (Gd2 O3) as gate dielectrics	Lin, T.D.;Chiu, H.C.;Chang, P.;Tung, L.T.;Chen, C.P.;Hong, M.;Kwo, J.;Tsai, W.;Wang, Y.C.; Lin, T.D.; Chiu, H.C.; Chang, P.; Tung, L.T.; Chen, C.P.; Hong, M.; Kwo, J.; Tsai, W.; Wang, Y.C.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:40Z	Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO2 on In0.53Ga0.47As	MINGHWEI HONG; Lee, K.Y.; Lee, Y.J.; Chang, P.; Huang, M.L.; Chang, Y.C.; Hong, M.; Kwo, J.
臺大學術典藏	2019-12-27T07:49:40Z	Molecular beam epitaxy grown Ga2 O3 (Gd2 O3) high 庥 dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics	Lee, C.H.; Lin, T.D.; Tung, L.T.; Huang, M.L.; Hong, M.; Kwo, J.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:40Z	Si metal-oxide-semiconductor devices with high 庥 Hf O2 fabricated using a novel MBE template approach followed by atomic layer deposition	Pan, C.H.;Kwo, J.;Lee, K.Y.;Lee, W.C.;Chu, L.K.;Huang, M.L.;Lee, Y.J.;Hong, M.; Pan, C.H.; Kwo, J.; Lee, K.Y.; Lee, W.C.; Chu, L.K.; Huang, M.L.; Lee, Y.J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:39Z	Achieving a low interfacial density of states in atomic layer deposited Al2 O3 on In0.53 Ga0.47 As	Chiu, H.C.; Tung, L.T.; Chang, Y.H.; Lee, Y.J.; Chang, C.C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:39Z	Self-aligned inversion-channel and D-mode InGaAs MOSFET using Al 2O3/Ga2O3(Gd2O3) as gate dielectrics	MINGHWEI HONG;Tsai, W.;Kwo, J.;Hong, M.;Lin, C.A.;Chang, P.;Chiu, H.C.;Chen, C.P.;Lin, T.D.; Lin, T.D.; Chen, C.P.; Chiu, H.C.; Chang, P.; Lin, C.A.; Hong, M.; Kwo, J.; Tsai, W.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:39Z	Inversion n-channel GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as gate dielectrics	Lee, C.H.; Hong, M.; Kwo, J.; Hong, J.M.; Tsai, C.C.; MINGHWEI HONG; Shiu, K.H.; Chiu, H.C.; Chang, W.H.; Chang, Y.C.; MINGHWEI HONG;Tsai, C.C.;Hong, J.M.;Kwo, J.;Hong, M.;Lee, C.H.;Shiu, K.H.;Chiu, H.C.;Chang, W.H.;Chang, Y.C.
臺大學術典藏	2019-12-27T07:49:39Z	Approaching fermi level unpinning in oxide-ino.2gao.8as	MINGHWEI HONG;Hong, M.;Tsai, W.;Wang, W.E.;Kwo, J.;Shiu, K.H.;Lin, D.;Lin, T.D.;Lee, W.C.;Chiang, T.H.; Chiang, T.H.; Lee, W.C.; Lin, T.D.; Lin, D.; Shiu, K.H.; Kwo, J.; Wang, W.E.; Tsai, W.; Hong, M.; MINGHWEI HONG
臺大學術典藏	2019-12-27T07:49:39Z	Self-aligned inversion n-channel In0.2Ga0.8As/GaAs metal-oxide-semiconductor field-effect-transistors with TiN gate and Ga2O3(Gd2O3) dielectric	Chen, C.P.; Lin, T.D.; Lee, Y.J.; Chang, Y.C.; Hong, M.; Kwo, J.; MINGHWEI HONG

Showing items 81-105 of 752 (31 Page(s) Totally)
<< < 1 2 3 4 5 6 7 8 9 10 > >>
View [10|25|50] records per page

	English \| 正體中文 \| 简体中文 \| 2822924
	???header.visitor??? : 30005765 ???header.onlineuser??? : 1182 ???header.sponsordeclaration???