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Institution Date Title Author
臺大學術典藏 2019-12-27T07:49:21Z High-performance self-aligned inversion-channel In0.53Ga 0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2 Lin, T.D.;Chang, W.H.;Chu, R.L.;Chang, Y.C.;Chang, Y.H.;Lee, M.Y.;Hong, P.F.;Chen, M.-C.;Kwo, J.;Hong, M.; Lin, T.D.; Chang, W.H.; Chu, R.L.; Chang, Y.C.; Chang, Y.H.; Lee, M.Y.; Hong, P.F.; Chen, M.-C.; Kwo, J.; Hong, M.; MINGHWEI HONG
臺大學術典藏 2019-12-27T07:49:21Z High-performance self-aligned inversion-channel In0.53Ga 0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2 Lin, T.D.;Chang, W.H.;Chu, R.L.;Chang, Y.C.;Chang, Y.H.;Lee, M.Y.;Hong, P.F.;Chen, M.-C.;Kwo, J.;Hong, M.; Lin, T.D.; Chang, W.H.; Chu, R.L.; Chang, Y.C.; Chang, Y.H.; Lee, M.Y.; Hong, P.F.; Chen, M.-C.; Kwo, J.; Hong, M.; MINGHWEI HONG

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