| 國立交通大學 |
2019-04-02T06:04:29Z |
Reliability Improvement of HfO2/SiON Gate Stacked nMOSFET using Fluorinated Silicate Glass Passivation Layer
|
Hsieh, Chih-Ren; Chen, Yung-Yu; Chung, Jer-Fu; Lou, Jen-Chung |
| 國立交通大學 |
2019-04-02T06:00:27Z |
Charge Trapping and Detrapping Behavior of Fluorinated HfO2/SiON Gate Stacked nMOSFET
|
Chen, Yung-Yu; Hsieh, Chih-Ren |
| 國立交通大學 |
2019-04-02T05:59:56Z |
Constant voltage stress induced charge trapping and detrapping characteristics of the Si3N4 uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor with fluorinated HfO2/SiON gate stack
|
Chen, Yung-Yu; Hsieh, Chih-Ren; Chiu, Fang-Yu |
| 國立交通大學 |
2019-04-02T05:58:18Z |
Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO2/SiON gate stacked nMOSFET
|
Hsieh, Chih-Ren; Chen, Yung-Yu; Lou, Jen-Chung |
| 國立交通大學 |
2017-04-21T06:49:39Z |
HfO2 Inter-Poly Dielectric Characteristics with Interface Fluorine Passivation
|
Chen, Yung-Yu; Hsieh, Chih-Ren; Lu, Kwung-Wen; Lou, Jen-Chung |
| 國立交通大學 |
2017-04-21T06:48:14Z |
Characteristics of the SiN Uniaxial Strained NMOSFET with Channel Fluorine Implantation
|
Chen, Yung-Yu; Hsieh, Chih-Ren; Chiu, Fang-Yu |
| 國立交通大學 |
2014-12-12T01:27:28Z |
氟鈍化製程與氮氧化層於高介電常數金氧半場效應電晶體與快閃記憶體的特性研究
|
謝智仁; Hsieh, Chih-Ren; 林國瑞; 羅正忠; Lin, Gray; Lou, Jen-Chung |
| 國立交通大學 |
2014-12-08T15:47:59Z |
Charge Trapping and Detrapping Behavior of Fluorinated HfO(2)/SiON Gate Stacked nMOSFET
|
Chen, Yung-Yu; Hsieh, Chih-Ren |
| 國立交通大學 |
2014-12-08T15:47:54Z |
Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO(2)/SiON gate stacked nMOSFET
|
Hsieh, Chih-Ren; Chen, Yung-Yu; Lou, Jen-Chung |
| 國立交通大學 |
2014-12-08T15:47:38Z |
Characteristics of the Fluorinated High-k Inter-Poly Dielectrics
|
Hsieh, Chih-Ren; Chen, Yung-Yu; Lu, Kwung-Wen; Lin, Gray; Lou, Jen-Chung |
| 國立交通大學 |
2014-12-08T15:37:37Z |
Constant voltage stress induced charge trapping and detrapping characteristics of the Si(3)N(4) uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor with fluorinated HfO(2)/SiON gate stack
|
Chen, Yung-Yu; Hsieh, Chih-Ren; Chiu, Fang-Yu |
| 國立交通大學 |
2014-12-08T15:23:37Z |
Stress immunity enhancement of the SiN uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor by channel fluorine implantation
|
Chen, Yung-Yu; Hsieh, Chih-Ren; Chiu, Fang-Yu |
| 國立交通大學 |
2014-12-08T15:21:42Z |
Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF4-plasma-induced deep electron trap level
|
Hsieh, Chih-Ren; Chen, Yung-Yu; Lin, Wen-Shin; Lin, Gray; Lou, Jen-Chung |
| 國立交通大學 |
2014-12-08T15:17:54Z |
Reliability Improvement of HfO(2)/SiON Gate Stacked nMOSFET using Fluorinated Silicate Glass Passivation Layer
|
Hsieh, Chih-Ren; Chen, Yung-Yu; Chung, Jer-Fu; Lou, Jen-Chung |
| 國立交通大學 |
2014-12-08T15:11:58Z |
Improved Retention Characteristic in Polycrystalline Silicon-Oxide-Hafnium Oxide-Oxide-Silicon-Type Nonvolatile Memory with Robust Tunnel Oxynitride
|
Hsieh, Chih Ren; Lai, Chiung Hui; Lin, Bo Chun; Zheng, Yuan Kai; Lou, Jen Chung; Lin, Gray |
| 國立交通大學 |
2014-12-08T15:11:31Z |
Effect of interfacial fluorination on the electrical properties of the inter-poly high-k dielectrics
|
Hsieh, Chih-Ren; Chen, Yung-Yu; Lu, Kwung-Wen; Lin, Gray; Lou, Jen-Chung |
| 國立交通大學 |
2014-12-08T15:07:35Z |
Improved performance and reliability for metal-oxide-semiconductor field-effect-transistor with fluorinated silicate glass passivation layer
|
Hsieh, Chih-Ren; Chen, Yung-Yu; Lou, Jen-Chung |
