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Institution Date Title Author
國立交通大學 2014-12-08T15:15:04Z Very high density (44 fF/mu m(2)) SrTiO3 MIM capacitors for RF applications Chiang, K. C.; Lin, J. W.; Pan, H. C.; Hsiao, C. N.; Chen, W. J.; Kao, H. L.; Hsieh, I. J.; Chin, Albert
國立交通大學 2014-12-08T15:15:03Z Thermal leakage improvement by using a high-work-function ni electrode in high-kappa TiHfO metal-insulator-metal capacitors Chiang, K. C.; Huang, C. C.; Pan, H. C.; Hsiao, C. N.; Lin, J. W.; Hsieh, I. J.; Cheng, C. H.; Chou, C. P.; Chin, A.; Hwang, H. L.; McAlister, S. P.
國立交通大學 2014-12-08T15:13:18Z A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retention Yang, H. J.; Chin, Albert; Chen, W. J.; Cheng, C. F.; Huang, W. L.; Hsieh, I. J.; McAlister, S. P.
國立交通大學 2014-12-08T15:11:24Z Low threshold voltage and high drive current poly-silicon thin film transistors using Ytterbium metal gate and LaAlO3 dielectric Hung, B. F.; Wu, C. H.; Chin, Albert; Wang, S. J.; Lin, J. W.; Hsieh, I. J.
國立交通大學 2014-12-08T15:07:53Z High-kappa TiCeO MIM Capacitors with a Dual-Plasma Interface Treatment Cheng, C. H.; Hsu, H. H.; Hsieh, I. J.; Deng, C. K.; Chin, Albert; Yeh, F. S.

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