|
"hsieh ij"的相關文件
顯示項目 1-17 / 17 (共1頁)
1
每頁顯示[10|25|50]項目
| 國立交通大學 |
2019-04-02T05:58:30Z |
Fabrication and characterization of the Pd-silicided emitters for field-emission devices
|
Wang, CC; Ku, TK; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:49:07Z |
Growth of MgWO4 phosphor by RF magnetron sputtering
|
Chu, JP; Hsieh, IJ; Chen, JT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:43:59Z |
The strong degradation of 30 angstrom gate oxide integrity contaminated by copper
|
Lin, YH; Chen, YC; Chan, KT; Pan, FM; Hsieh, IJ; Chin, A |
| 國立交通大學 |
2014-12-08T15:43:18Z |
Cu contamination effect in oxynitride gate dielectrics
|
Lin, YH; Pan, FM; Liao, YC; Chen, YC; Hsieh, IJ; Chin, A |
| 國立交通大學 |
2014-12-08T15:27:43Z |
Fabrication and characterization of gated Si field emitter arrays with gate aperture below 0.5 mu m
|
Ku, TK; Hsieh, BB; Chen, MS; Wang, CC; Wang, PW; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:27:43Z |
Fabrication and characterization of the Pd-silicided emitters for field-emission devices
|
Wang, CC; Ku, TK; Feng, MS; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:27:38Z |
Fabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii.
|
Ku, TK; Chen, SH; Yang, CD; She, NJ; Tarntair, FG; Wang, CC; Chen, CF; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:25:11Z |
Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retention
|
Chin, A; Laio, CC; Chen, C; Chiang, KC; Yu, DS; Yoo, WJ; Samudra, GS; Wang, T; Hsieh, IJ; McAlister, SP; Chi, CC |
| 國立交通大學 |
2014-12-08T15:03:57Z |
GROWTH OF ZNGA2O4 PHOSPHOR BY RADIO-FREQUENCY MAGNETRON SPUTTERING
|
HSIEH, IJ; FENG, MS; KUO, KT; LIN, P |
| 國立交通大學 |
2014-12-08T15:03:46Z |
CATHODOLUMINESCENT CHARACTERISTICS OF ZNGA2O4 PHOSPHOR GROWN BY RADIO-FREQUENCY MAGNETRON SPUTTERING
|
HSIEH, IJ; CHU, KT; YU, CF; FENG, MS |
| 國立交通大學 |
2014-12-08T15:03:37Z |
A NEW FABRICATION TECHNOLOGY FOR FIELD-EMISSION TRIODES WITH EMITTER-GATE SEPARATION OF 0.18-MU-M
|
WANG, CC; LEE, WF; KU, TK; CHEN, MS; FENG, MS; HSIEH, IJ; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:09Z |
SIMULATION OF THE ELECTRICAL CHARACTERISTICS OF FIELD-EMISSION TRIODES WITH VARIOUS GATE STRUCTURES
|
KU, TK; CHEN, MS; WANG, CC; FENG, MS; HSIEH, IJ; HUANG, JCM; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:03Z |
Fabrication and characterization of diamond-clad silicon field emitter arrays
|
Cheng, HC; Ku, TK; Hsieh, BB; Chen, SH; Leu, SY; Wang, CC; Chen, CF; Hsieh, IJ; Huang, JCM |
| 國立交通大學 |
2014-12-08T15:02:58Z |
Characterization and fabrication of chimney-shaped metal field emitters
|
Cheng, HC; Wang, CC; Ku, TK; Hsieh, IJ |
| 國立交通大學 |
2014-12-08T15:02:40Z |
Enhanced electron emission from phosphorus-doped diamond-clad silicon field emitter arrays
|
Ku, TK; Chen, SH; Yang, CD; She, NJ; Wang, CC; Chen, CF; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:37Z |
Fabrication and characterization of the Pd-silicided emitters for field-emission devices
|
Wang, CC; Ku, TK; Hsieh, IJ; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:11Z |
Enhanced electron emission from phosphorous- and boron-doped diamond-clad Si field emitter arrays
|
Ku, TK; Chen, SH; Yang, CD; She, NJ; Tarntair, FG; Wang, CC; Chen, CF; Hsieh, IJ; Cheng, HC |
顯示項目 1-17 / 17 (共1頁)
1
每頁顯示[10|25|50]項目
|
