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Showing items 26-35 of 37 (4 Page(s) Totally)
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| 國立臺灣大學 |
2003 |
Strain-induced growth of SiO2 dots by liquid phase deposition
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Liu, C. W.; Hsu, B.-C.; Chen, K.-F.; Lee, M. H.; Shie, C.-R.; Chen, Pang-Shiu |
| 國立臺灣大學 |
2003 |
A High Efficient 820 nm MOS Ge Quantum Dot Photodetector
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Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; Liu, C.W. |
| 臺大學術典藏 |
2003 |
Strain-induced growth of SiO2 dots by liquid phase deposition
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Shie, C.-R.; Chen, Pang-Shiu; LiuCW; Lee, M. H.; Chen, K.-F.; Hsu, B.-C.; Liu, C. W.; Liu, C. W.; Hsu, B.-C.; Chen, K.-F.; Lee, M. H.; Shie, C.-R.; Chen, Pang-Shiu |
| 國立臺灣大學 |
2002-12 |
High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity
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Hsu, B.C.; Chang, S.T.; Shie, C.R.; Lai, C.C.; Chen, P.S.; Liu, C.W. |
| 國立臺灣大學 |
2002 |
Roughness- Enhanced Reliability of MOS Tunneling Diodes
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Lin, C.-H.; Yuan, F.; Shie, C.-R.; Chen, K.-F.; Hsu, B.-C.; Lee, M.H.; Pai, W.W.; Liu, C.W. |
| 國立臺灣大學 |
2002 |
Oxide roughness effect on tunneling current of MOS diodes
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Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; Liu, C.W. |
| 國立臺灣大學 |
2001-12 |
Novel photodetectors using metal-oxide-silicon tunneling structures
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Hsu, B.C.; Liu, W.T.; Lin, C.H.; Liu, C.W. |
| 國立臺灣大學 |
2001-12 |
Oxide roughness enhanced reliability of MOS tunneling diodes
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Lin, C.H.; Lee, M.H.; Hsu, B.C.; Chen, K.F.; Shie, C.R.; Liu, C.W. |
| 國立臺灣大學 |
2001 |
A PMOS Tunneling Photodetector
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Hsu, B.-C.; Liu, C.W.; Liu, W.T.; Lin, C.-H. |
| 國立臺灣大學 |
2001 |
A Comprehensive Study of Gate Inversion Current of Metal-Oxide-Silicon Tunneling diodes
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Lin, C.-H.; Hsu, B.-C.; Lee, M.H.; Liu, C.W. |
Showing items 26-35 of 37 (4 Page(s) Totally)
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