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Showing items 1-3 of 3 (1 Page(s) Totally)
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| 國立成功大學 |
2016-08 |
Analysis of high-voltage metal-oxide-semiconductor transistors with gradual junction in the drift region
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Chen, Jone F.; Ai, Teng-Jen; Tsai, Yan-Lin; Hsu, Hao-Tang; Chen, Chih-Yuan; Hwang, Hann-Ping |
| 國立成功大學 |
2016-01 |
Drift region doping effects on characteristics and reliability of high-voltage n-type metal-oxide-semiconductor transistors
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Chen, Jone F.; Chang, Chun-Po; Liu, Yu Ming; Tsai, Yan-Lin; Hsu, Hao-Tang; Chen, Chih-Yuan; Hwang, Hann-Ping |
| 國立成功大學 |
2013-04 |
Characteristics of Lateral Diffused Metal-Oxide-Semiconductor Transistors with Lightly Doped Drain Implantation through Gradual Screen Oxide
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Yan, Chin-Rung; Chen, Jone F.; Lin, Chung-Yi; Hsu, Hao-Tang; Liao, Yu-Jie; Yang, Min-Ti; Chen, Chih-Yuan; Lin, Yin-Chia; Chen, Huei-Haurng |
Showing items 1-3 of 3 (1 Page(s) Totally)
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