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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:13:12Z |
Comparison of Ni-metal induced lateral crystallization thin-film transistors fabricated by rapid thermal annealing and conventional furnace annealing at 565 degrees C
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Hu, Chen-Ming; Wu, Yew Chung Sermon; Gong, Jun-Wei |
| 國立交通大學 |
2014-12-08T15:13:10Z |
Improving the electrical properties of NILC poly-Si films using a gettering substrate
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Hu, Chen-Ming; Wu, YewChung Sermon; Lin, Chi-Ching |
| 國立交通大學 |
2014-12-08T15:13:01Z |
Gettering of nickel within the Ni-metal induced lateral crystallization polycrystalline silicon film through the contact holes
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Hu, Chen-Ming; Wu, YewChung Sermon |
| 國立交通大學 |
2014-12-08T15:11:52Z |
Improve the electrical properties of NILC poly-Si films using a gettering substrate
|
Wu, YewChung Sermon; Hu, Chen-Ming; Lin, Chi-Ching |
Showing items 1-4 of 4 (1 Page(s) Totally)
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