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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
臺大學術典藏 2020-04-16T02:35:42Z Simulations of optoacoustic wave propagation in light-absorbing media using a finite-difference time-domain method PAI-CHI LI; Huang, D.-H.; Liao, C.-K.; Wei, C.-W.; Li, P.-C.
國立臺灣科技大學 2020 Reliability analysis for a hybrid flow shop with due date consideration Lin, Y.-K.;Huang, D.-H.
臺大學術典藏 2018-09-10T04:08:15Z Conformational studies of sialyl lewis X in aqueous solution YING-CHIH LIN; Wong, C.-H.; Lin, Y.-C.;Hummel, C.W.;Huang, D.-H.;Ichikawa, Y.;Nicolaou, K.C.;Wong, C.-H.; Lin, Y.-C.; Hummel, C.W.; Huang, D.-H.; Ichikawa, Y.; Nicolaou, K.C.
國立臺灣科技大學 2016 Reliability evaluation of a multistate flexible flow shop with stochastic capacity for multiple types of jobs Lin, Y.-K;Huang, D.-H;Lin, J.-S.
國立臺灣科技大學 2016 Reliability Evaluation of a Hybrid Flow-Shop with Stochastic Capacity Within a Time Constraint Lin, Y.-K;Huang, D.-H;Yeng, L.C.-L.
國立臺灣科技大學 2016 Estimated network reliability evaluation for a stochastic flexible flow shop network with different types of jobs Lin, Y.-K;Huang, D.-H;Huang, C.-F.
國立成功大學 2007-02-26 delta-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition Lin, Y. S.; Huang, D. H.; Chen, Yen-Wei; Huang, J. C.; Hsu, Wei-Chou
國立東華大學 2007 -doped InGaP/GaAs heterostrucure-emitter bipolar transistor grown by metalorganic chemical vapor deposition Lin,Y. S.; Huang,D. H.; Hsu,W. C.; Huang,J. C.; Chen,Y. W.
國立東華大學 2007 A metamorphic heterostructure field-effect transistor with a double delta-doped channel Lin,Y. S.; Yeh,J. H.; Huang,J. C.; Huang,D. H.; Hsu,W. C.
國立東華大學 2007 Thermal-stable characteristics of metamorphic double delta-doped heterostructure field-effect transistor Lin,Y. S.; Huang,J. C.; Huang,D. H.; Hsu,W. C.
國立東華大學 2006-08 n+-GaAs/p+-InAlGaP/n-InAlGaP camel-gate high-electron mobility transistors grown by MOCVD Lin,Y. S.; Huang,D. H.; Hsu, W. C.; Hsu,R. T.; Wu,Y. H.
國立東華大學 2006-08 InP-based composite-collector double heterojunction bipolar transistor Lin,Y. S.; Hsu,W. C.; Huang,D. H.; Wang,T. B.; Su,K. H.
國立成功大學 2006-05-29 High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAs/GaAs metamorphic high electron mobility transistor Lee, C. S.; Chen, Y. J.; Hsu, Wei-Chou; Su, K. H.; Huang, J. C.; Huang, D. H.; Wu, C. L.
國立成功大學 2006-04 Improved InAlGaP-based heterostructure field-effect transistors Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Wang, T. B.; Su, K. H.; Huang, J. C.; Ho, Ching-Hwa
國立成功大學 2006-03 Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Su, K. H.; Wang, T. B.
國立東華大學 2006 n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors Lin,Y. S.; Huang,D. H.; Wu,Y. H.; Hsu,R. T.; Wang,T. B.; Hsu,W. C.
國立東華大學 2006 Improved InAlGaP-based heterostructure field-effect transistors Lin,Y. S.; Huang,D. H.; Ho,C. H.; Huang,J. C.; Su,K. H.; Wang,T. B.; Hsu,W. C.
國立東華大學 2006 Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistor using emitter edge-thinning Lin,Y. S.; Huang,D. H.; Wang,T. B.; Su,K. H.; Hsu,W. C.
國立東華大學 2006 Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron- mobility transistors with a symmetrically graded 3 and an inversely graded channel Lin,Y. S.; WuY. H.; Liao,Y. K.; Huang,J. C.; Hsu,R. T.; Huang,D. H.; Hsu,W. C.
國立東華大學 2006 InP-based double heterojunction bipolar transistor with emitter edge-thinning Lin,Y. S.; Huang,D. H.; Wang,T. B.; Hsu,W. C.; Su,K. H.; Huang, J. C.; Yu,S. J.
國立東華大學 2005-08 Electrical characteristics of -doping InGaP/GaAs heterojunction-emitter bipolar transistor Lin,Y. S.; Hsu,W. C.; Huang,D. H.; Wang, T. B.; Su,K. H.
國立成功大學 2005-06 Characteristics of In0.425Al0.575As-InxGa(1-x) as metamorphic HEMTs with pseudomorphic and symmetrically graded channels Hsu, Wei-Chou; Chen, Y. J.; Lee, C. S.; Wang, T. B.; Huang, J. C.; Huang, D. H.; Su, K. H.; Lin, Y. S.; Wu, C. L.
國立東華大學 2005 Characteristics of In0.425Al0.575As/ InXGa1-XAs metamorphic HEMTs with pseudomorphic and symmetrically- graded channel Lin,Y. S.; Wu,C. L.; Hsu,W. C.; Su,K. H.; Huang,D. H.; Huang,J. C.; Wang,T. B.; Lee,C. S.; Chen,Y. J.
國立東華大學 2005 Improved InP/InGaAs double heterojunction bipolar transistor Lin,Y. S.; Hsu,W. C.; Chen,Y. J.; Huang,D. H.; Wang, T. B.; Huang,J. H.
國立成功大學 2004-11-22 Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors Chen, Y. J.; Hsu, Wei-Chou; Lee, C. S.; Wang, T. B.; Tseng, C. H.; Huang, J. C.; Huang, D. H.; Wu, C. L.

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