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Showing items 1-25 of 77 (4 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:28Z |
Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen
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Chen, LP; Chan, YC; Chang, SJ; Huang, GW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:49:23Z |
Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen
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Chen, LP; Chan, YC; Chang, SJ; Huang, GW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:41Z |
CMOS RFIC: Application to wireless transceiver design
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Wen, KA; Wuen, WS; Huang, GW; Chen, LP; Chen, KY; Liu, SF; Chen, ZS; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:07Z |
Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxy
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Chen, KM; Huang, HJ; Chang, CY; Chen, LP; Huang, GW |
| 國立交通大學 |
2014-12-08T15:45:07Z |
Study of boron effects on the reaction of Co and Si1-xGex at various temperatures
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Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chang, TC; Chen, LP; Huang, GW |
| 國立交通大學 |
2014-12-08T15:45:02Z |
Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETs
|
Su, CY; Chen, LP; Chang, SJ; Huang, GW; Ho, YP; Tseng, BM; Lin, DC; Lee, HY; Kuan, JF; Deng, YM; Chen, CL; Leu, LY; Wen, KA; Chang, CY |
| 國立交通大學 |
2014-12-08T15:44:56Z |
Study on Ge/Si ratio, silicidation, and strain relaxation of high temperature sputtered Co/Si1-xGex structures
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Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW |
| 國立交通大學 |
2014-12-08T15:44:54Z |
Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si1-xGex source/drain
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Huang, HJ; Chen, KM; Chang, CY; Chen, LP; Huang, GW; Huang, TY |
| 國立交通大學 |
2014-12-08T15:44:34Z |
Improved electrical properties of shallow p(+)-n junction using selectively grown graded Si1-xGex epitaxial structure
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Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW |
| 國立交通大學 |
2014-12-08T15:44:07Z |
The reaction of Co and Si1-xGex for MOSFET with poly-Si1-xGex gate
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Chen, KM; Huang, HJ; Chang, CY; Huang, TY; Huang, GW; Chen, LP |
| 國立交通大學 |
2014-12-08T15:43:36Z |
Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drain
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Huang, HJ; Chen, KM; Huang, TY; Chao, TS; Huang, GW; Chien, CH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:43:21Z |
An automatic macro program for radio frequency MOSFET characteristics analysis
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Su, CY; Chang, SJ; Chen, LP; Ho, YP; Huang, GW; Lin, DC; Tseng, BM; Lee, HY; Kuan, JF; Deng, YM; Wen, KA; Chang, CY |
| 國立交通大學 |
2014-12-08T15:42:30Z |
A method to characterize the dielectric and interfacial properties of metal-insulator-semiconductor structures by microwave measurement
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Lue, HT; Tseng, TY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:42:25Z |
A macro model of silicon spiral inductor
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Su, CY; Chen, LP; Chang, SJ; Tseng, BM; Lin, DC; Huang, GW; Ho, YP; Lee, HY; Kuan, JF; Wen, WY; Liou, P; Chen, CL; Leu, LY; Wen, KA; Chang, CY |
| 國立交通大學 |
2014-12-08T15:41:56Z |
Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors
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Chen, KM; Huang, GW; Chiu, DY; Huang, HJ; Chang, CY |
| 國立交通大學 |
2014-12-08T15:39:42Z |
Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETs
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Lee, DY; Huang, TY; Lin, HC; Chiang, WJ; Huang, GW; Wanga, T |
| 國立交通大學 |
2014-12-08T15:39:27Z |
DC-12-GHz 10-dB gain shunt-series shunt-shunt wideband amplifiers by commercially available 0.35 mu M SiGe HBT technology
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Meng, CC; Wu, TH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Low-frequency noise in partially depleted SOI MOSFETs operating from linear region to saturation region at various temperatures
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Chen, KM; Hu, HH; Huang, GW; Yeh, WK; Chang, CY |
| 國立交通大學 |
2014-12-08T15:39:17Z |
A new method to extract MOSFET threshold voltage, effective channel length, and channel mobility using S-parameter measurement
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Chen, HY; Chen, KM; Huang, GW; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:08Z |
Hot-carrier effects on power characteristics of SiGeHBTs
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Huang, SY; Chen, KM; Huang, GW; Tseng, HC; Hsu, TL; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:05Z |
Low-noise metamorphic HEMTs with reflowed 0.1 mu m T-gate
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Lien, YC; Chang, EY; Chang, HC; Chu, LH; Huang, GW; Lee, HM; Lee, CS; Chen, SH; Shen, PT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:38:58Z |
InGaP/InGaAs PHEMT with high IP3 for low noise applications
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Lin, YC; Chang, EY; Chen, GJ; Lee, HM; Huang, GW; Biswas, D; Chang, CY |
| 國立交通大學 |
2014-12-08T15:38:55Z |
Composite-channel metamorphic high electron mobility transistor for low-noise and high-linearity applications
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Chang, EY; Lin, YC; Chen, GJ; Lee, HM; Huang, GW; Biswas, D; Chang, CY |
| 國立交通大學 |
2014-12-08T15:38:44Z |
Pocket implantation effect on drain current flicker noise in analog nMOSFET devices
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Wu, JW; Cheng, CC; Chiu, KL; Guo, JC; Lien, WY; Chang, CS; Huang, GW; Wang, TH |
| 國立交通大學 |
2014-12-08T15:37:19Z |
A fully integrated 5.2-GHz single-ended-in and single-ended-out 0.18-mu m CMOS Gilbert upconverter
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Meng, CC; Lin, MQ; Huang, GW |
Showing items 1-25 of 77 (4 Page(s) Totally)
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