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| 國立交通大學 |
2019-04-02T05:59:28Z |
Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen
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Chen, LP; Chan, YC; Chang, SJ; Huang, GW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:49:23Z |
Direct oxidation of Si1-xGex layers using Vacuum-Ultra-Violet light radiation in oxygen
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Chen, LP; Chan, YC; Chang, SJ; Huang, GW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:41Z |
CMOS RFIC: Application to wireless transceiver design
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Wen, KA; Wuen, WS; Huang, GW; Chen, LP; Chen, KY; Liu, SF; Chen, ZS; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:07Z |
Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxy
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Chen, KM; Huang, HJ; Chang, CY; Chen, LP; Huang, GW |
| 國立交通大學 |
2014-12-08T15:45:07Z |
Study of boron effects on the reaction of Co and Si1-xGex at various temperatures
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Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chang, TC; Chen, LP; Huang, GW |
| 國立交通大學 |
2014-12-08T15:45:02Z |
Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETs
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Su, CY; Chen, LP; Chang, SJ; Huang, GW; Ho, YP; Tseng, BM; Lin, DC; Lee, HY; Kuan, JF; Deng, YM; Chen, CL; Leu, LY; Wen, KA; Chang, CY |
| 國立交通大學 |
2014-12-08T15:44:56Z |
Study on Ge/Si ratio, silicidation, and strain relaxation of high temperature sputtered Co/Si1-xGex structures
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Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW |
| 國立交通大學 |
2014-12-08T15:44:54Z |
Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si1-xGex source/drain
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Huang, HJ; Chen, KM; Chang, CY; Chen, LP; Huang, GW; Huang, TY |
| 國立交通大學 |
2014-12-08T15:44:34Z |
Improved electrical properties of shallow p(+)-n junction using selectively grown graded Si1-xGex epitaxial structure
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Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW |
| 國立交通大學 |
2014-12-08T15:44:07Z |
The reaction of Co and Si1-xGex for MOSFET with poly-Si1-xGex gate
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Chen, KM; Huang, HJ; Chang, CY; Huang, TY; Huang, GW; Chen, LP |
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