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Showing items 1-4 of 4 (1 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:49:23Z |
The Effect of Surface Passivation on the Electrical Performance of AlG aN/GaNHEMTs with Slant Field Plates
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Hsu, Heng-Tung; Lin, Yueh-Chin; Huang, Lu-Che; Chang, Chia-Hua; Hsieh, Ting-En; Itoh, Yasushi; Chang, Edward Yi |
| 國立交通大學 |
2014-12-16T06:14:02Z |
Method for forming T-shaped gate structure
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Chang Edward Yi; Huang Lu-Che; Chang Chia-Hua; Lin Yueh-Chin; Chieng Wei-Hua; Liu Shih-Chien |
| 國立交通大學 |
2014-12-12T01:54:08Z |
以深紫外光微影製作具傾斜型電場板之氮化鋁鎵/氮化鎵高電子遷移率電晶體
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黃祿哲; Huang, Lu-Che; 張翼; Chang, Yi Edward |
| 國立交通大學 |
2014-12-08T15:30:48Z |
Fabrication of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Silicon Substrate with Slant Field Plates Using Deep-UV Lithography Featuring 5W/mm Power Density at X-band
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Chang, Chia-Hua; Hsu, Heng-Tung; Huang, Lu-Che; Chiang, Che-Yang; Chang, Edward Yi |
Showing items 1-4 of 4 (1 Page(s) Totally)
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