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Institution Date Title Author
國立交通大學 2017-04-21T06:49:23Z The Effect of Surface Passivation on the Electrical Performance of AlG aN/GaNHEMTs with Slant Field Plates Hsu, Heng-Tung; Lin, Yueh-Chin; Huang, Lu-Che; Chang, Chia-Hua; Hsieh, Ting-En; Itoh, Yasushi; Chang, Edward Yi
國立交通大學 2014-12-16T06:14:02Z Method for forming T-shaped gate structure Chang Edward Yi; Huang Lu-Che; Chang Chia-Hua; Lin Yueh-Chin; Chieng Wei-Hua; Liu Shih-Chien
國立交通大學 2014-12-12T01:54:08Z 以深紫外光微影製作具傾斜型電場板之氮化鋁鎵/氮化鎵高電子遷移率電晶體 黃祿哲; Huang, Lu-Che; 張翼; Chang, Yi Edward
國立交通大學 2014-12-08T15:30:48Z Fabrication of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Silicon Substrate with Slant Field Plates Using Deep-UV Lithography Featuring 5W/mm Power Density at X-band Chang, Chia-Hua; Hsu, Heng-Tung; Huang, Lu-Che; Chiang, Che-Yang; Chang, Edward Yi

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