|
|
???tair.name??? >
???browser.page.title.author???
|
"huang mao lin"???jsp.browse.items-by-author.description???
Showing items 1-15 of 15 (1 Page(s) Totally)
1
View [10|25|50] records per page
| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Method and system for manufacturing semiconductor device
|
Hong, Ming-Hwei;Kwo, Ray-Nien;Pi, Tun-Wen;Huang, Mao-Lin;Chang, Yu-Hsing;Chang, Pen;Lin, Chun-An;Lin, Tsung-Da; Hong, Ming-Hwei; Kwo, Ray-Nien; Pi, Tun-Wen; Huang, Mao-Lin; Chang, Yu-Hsing; Chang, Pen; Lin, Chun-An; Lin, Tsung-Da; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:49Z |
064603 Surface-Atom Core-Level Shift in GaAs (III) A-2$\\times$ 2
|
Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; Wertheim, Gunther K; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:40:10Z |
Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Chang, Pen;Chiu, Han-Chin;Lin, Tsung-Da;Huang, Mao-Lin;Chang, Wen-Hsin;Wu, Shao-Yun;Wu, Kang-Hua;Hong, Minghwei;Kwo, Jueinai; Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:49Z |
In-situ XPS, STM and STS analyses of high k oxide/III-V interfaces
|
Huang, Mao-Lin;Chang, Yu-Shing;Chang, Pen;Chiu, Han-Chin;Shen, Jyun-Yang;Lin, Tsung-Da;Raynien Kwo, J;Hong, Minghwei;Pi, Tun-Wen; Huang, Mao-Lin; Chang, Yu-Shing; Chang, Pen; Chiu, Han-Chin; Shen, Jyun-Yang; Lin, Tsung-Da; Raynien Kwo, J; Hong, Minghwei; Pi, Tun-Wen; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T08:12:49Z |
$\\backslash$ textit ${$In-situ$}$ XPS, STM and STS analyses of high k oxide/III-V interfaces
|
Huang, Mao-Lin;Chang, Yu-Shing;Chang, Pen;Chiu, Han-Chin;Shen, Jyun-Yang;Lin, Tsung-Da;Kwo, J Raynien;Hong, Minghwei;Pi, Tun-Wen; Huang, Mao-Lin; Chang, Yu-Shing; Chang, Pen; Chiu, Han-Chin; Shen, Jyun-Yang; Lin, Tsung-Da; Kwo, J Raynien; Hong, Minghwei; Pi, Tun-Wen; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:13Z |
III? V Metal? Oxide? Semiconductor Field-Effect Transistors with High? Dielectrics
|
Hong, Minghwei; Kwo, J Raynien; Tsai, Pei-chun; Chang, Yaochung; Huang, Mao-Lin; Chen, Chih-ping; others; MINGHWEI HONG |
| 國立交通大學 |
2016-03-28T00:04:16Z |
Evaluating overall quality of graph visualizations based on aesthetics aggregation
|
Huang, Weidong; Huang, Mao Lin; Lin, Chun-Cheng |
| 國立交通大學 |
2014-12-08T15:36:08Z |
Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrate
|
Lin, Yueh-Chin; Huang, Mao-Lin; Chen, Chen-Yu; Chen, Meng-Ku; Lin, Hung-Ta; Tsai, Pang-Yan; Lin, Chun-Hsiung; Chang, Hui-Cheng; Lee, Tze-Liang; Lo, Chia-Chiung; Jang, Syun-Ming; Diaz, Carlos H.; Hwang, He-Yong; Sun, Yuan-Chen; Chang, Edward Yi |
| 國立臺灣大學 |
2012 |
Surface-Atom Core-Level Shift in GaAs(111)A-2x2
|
Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; Wertheim, Gunther K.; Hong, Minghwei; Kwo, Jueinai |
| 臺大學術典藏 |
2012 |
Surface-Atom Core-Level Shift in GaAs(111)A-2x2
|
Kwo, Jueinai; Hong, Minghwei; Wertheim, Gunther K.; Chiang, Tsung-Hung; Huang, Mao-Lin; Chen, Bor-Rong; Pi, Tun-Wen; Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; Wertheim, Gunther K.; Hong, Minghwei; Kwo, Jueinai |
| 臺大學術典藏 |
2012 |
Surface-atom core-level shift in GaAs (111) A-2$\\times$ 2
|
Pi, Tun-Wen;Chen, Bor-Rong;Huang, Mao-Lin;Chiang, Tsung-Hung;K. Wertheim, Gunther;Hong, Minghwei;Kwo, Jueinai; Pi, Tun-Wen; Chen, Bor-Rong; Huang, Mao-Lin; Chiang, Tsung-Hung; K. Wertheim, Gunther; Hong, Minghwei; Kwo, Jueinai; MINGHWEI HONG |
| 國立臺灣大學 |
2011 |
Self-Aligned Inversion-Channel In0. 53Ga0. 47As Metal--Oxide--Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai |
| 國立臺灣大學 |
2011 |
Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai |
| 臺大學術典藏 |
2011 |
Self-Aligned Inversion-Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with In-situ Deposited Al2O3/Y2O3 as Gate Dielectrics
|
Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai; Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Chang, Pen; Chiu, Han-Chin; Lin, Tsung-Da; Huang, Mao-Lin; Chang, Wen-Hsin; Wu, Shao-Yun; Wu, Kang-Hua; Hong, Minghwei; Kwo, Jueinai |
| 臺大學術典藏 |
2009 |
Nanometer-Thick Single-Crystal Hexagonal Gd2O3 on GaN for Advanced Complementary Metal-Oxide-Semiconductor Technology
|
Chang, Wen Hsin;Lee, Chih Hsun;Chang, Yao Chung;Chang, Pen;Huang, Mao Lin;Lee, Yi Jun;Hsu, Chia-Hung;Hong, J Minghuang;Tsai, Chiung Chi;Kwo, J Raynien;others; Chang, Wen Hsin; Lee, Chih Hsun; Chang, Yao Chung; Chang, Pen; Huang, Mao Lin; Lee, Yi Jun; Hsu, Chia-Hung; Hong, J Minghuang; Tsai, Chiung Chi; Kwo, J Raynien; others; MINGHWEI HONG |
Showing items 1-15 of 15 (1 Page(s) Totally)
1
View [10|25|50] records per page
|
