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Showing items 1-10 of 78 (8 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Greatly improved interfacial passivation of in-situ high $κ$ dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge (100)
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Chu, RL;Liu, YC;Lee, WC;Lin, TD;Huang, ML;Pi, TW;Kwo, J;Hong, M; Chu, RL; Liu, YC; Lee, WC; Lin, TD; Huang, ML; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
Mapping the band profile across the Gd2O3/GaAs (100) hetero-interface by using scanning tunneling microscopy
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Huang, BC; Chiu, YP; Shih, MC; Shen, JY; Chang, P; Chang, CS; Huang, ML; Tsai, MH; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
$\\backslash$ textit ${$In-situ$}$ MBE and ALD deposited HfO $ _ ${$2$}$ $ on In $ _ ${$0.53$}$ $ Ga $ _ ${$0.47$}$ $ As
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Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:51Z |
InAs MOS devices passivated with molecular beam epitaxy-grown Gd2O3 dielectrics
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Lin, CA; Huang, ML; Chiu, P-C; Lin, H-K; Chyi, J-I; Chiang, TH; Lee, WC; Chang, YC; Chang, YH; Brown, GJ; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Growth mechanism of atomic layer deposited Al2O3 on GaAs (001)-4$\\times$ 6 surface with trimethylaluminum and water as precursors
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Huang, ML;Chang, YH;Lin, TD;Lin, HY;Liu, YT;Pi, TW;Hong, M;Kwo, J; Huang, ML; Chang, YH; Lin, TD; Lin, HY; Liu, YT; Pi, TW; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition
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Chang, YH; Lin, CA; Liu, YT; Chiang, TH; Lin, HY; Huang, ML; Lin, TD; Pi, TW; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition
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Lin, TD; Chang, YH; Lin, CA; Huang, ML; Lee, WC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
In-situ MBE and ALD deposited HfO2 on In0. 53Ga0. 47As
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Lee, WC; Lin, CA; Huang, ML; Kwo, J; Chang, YH; Chang, P; Lin, TD; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
In-situ photoemission analyses of ALD-oxide/InxGa1-xAs (001) interfaces
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Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T09:20:50Z |
$\\backslash$ textit ${$In-situ$}$ photoemission analyses of ALD-oxide/In $ _ ${$x$}$ $ Ga $ _ ${$1-x$}$ $ As (001) interfaces
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Kwo, J; MINGHWEI HONG; Hong, M; Huang, ML; Chang, YH; Lin, TD; Lee, WC; Chiang, TH; Lin, CA; Lin, HY; Pi, T-W |
Showing items 1-10 of 78 (8 Page(s) Totally)
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