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Showing items 31-55 of 78 (4 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T07:34:13Z |
Advances on III-V MOSFET for Science and Technology beyond Si CMOS
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Kwo, JR;Lin, TD;Huang, ML;Chang, P;Lee, YJ;Hong, M; Kwo, JR; Lin, TD; Huang, ML; Chang, P; Lee, YJ; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:12Z |
High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layers
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Chu, LK;Chu, RL;Huang, ML;Tung, LT;Lin, TD;Chang, CC;Kwo, J;Hong, M; Chu, LK; Chu, RL; Huang, ML; Tung, LT; Lin, TD; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:11Z |
Nano-electronics of high $κ$ dielectrics on InGaAs for key technologies beyond Si CMOS
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Lin, TD;Chang, P;Chiu, HC;Chang, YC;Lin, CA;Chang, WH;Lee, YJ;Chang, YH;Huang, ML;Kwo, J;others; Lin, TD; Chang, P; Chiu, HC; Chang, YC; Lin, CA; Chang, WH; Lee, YJ; Chang, YH; Huang, ML; Kwo, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parameters
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Chang, YC; Huang, ML; Lee, KY; Lee, YJ; Lin, TD; Hong, M; Kwo, J; Lay, TS; Liao, CC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Molecular beam epitaxy grown Ga2O3 (Gd2O3) high kappa dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics
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Lee, CH; Lin, TD; Tung, LT; Huang, ML; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As
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Lee, KY; Lee, YJ; Chang, P; Huang, ML; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:19Z |
Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition
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Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:17Z |
Sub-nanometer EOT scaling on In 0.53 Ga 0.47 As with atomic layer deposited HfO 2 as gate dielectric
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Lee, KY; Chang, P; Chang, YC; Huang, ML; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:14Z |
Interfacial-layers-free Ga2O3 (Gd2O3)/Ge MOS Diodes
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Lee, CH; Lin, TD; Lee, KY; Huang, ML; Tung, LT; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:22Z |
Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaN
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Chang, YC; Chiu, HC; Lee, YJ; Huang, ML; Lee, KY; Hong, M; Chiu, YN; Kwo, J; Wang, Yeong-Her; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:20Z |
Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant
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Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; Hong, M; Hsu, CH; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
Structural and magnetic properties of epitaxial Fe 3 Si/GaAs heterostructures
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Huang, ML; Chiu, YN; Ho, CC; Chang, P; Hsu, CH; Hong, M; Kwo, J; MINGHWEI HONG; Hsu, YL; Lee, YJ; Chang, YH |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
Observation of room temperature ferromagnetic behavior in cluster-free, Co doped HfO2 films
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Chang, YH; Soo, YL; Lee, WC; Huang, ML; Lee, YJ; Weng, SC; Sun, WH; Hong, M; Kwo, J; Lee, SF; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)
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Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; Hong, M; Yu, KL; Tang, MT; Lin, BH; Hsu, CH; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:18Z |
Defining new frontiers in electronic devices with high $κ$ dielectrics and interfacial engineering
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Hong, M; Lee, WC; Huang, ML; Chang, YC; Lin, TD; Lee, YJ; Kwo, J; Hsu, CH; Lee, HY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:16Z |
MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALD
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Lee, Kun Yu; Lee, WC; Lin, TD; Lee, CS; Chang, YC; Lee, YJ; Huang, ML; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:16Z |
The mechanism of Fermi level pinning/unpinning at high k Oxide/GaAs interface
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Huang, ML; Lee, WC; Chang, P; Lin, TD; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:14Z |
MBE and ALD grown High k Dielectrics Gate Stacks on GaN
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Chang, YC; Lee, KY; Lee, WC; Lin, TD; Lee, YJ; Huang, ML; Hong, M; Kwo, J; Wang, YH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:14Z |
Investigations of a New Diluted Magnetic Oxide with Room Temperature Ferromagnetism in Co-doped HfO2
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Chang, YH; Lee, WC; Huang, ML; Lee, SF; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:12Z |
A novel approach of using a MBE template for ALD growth of high-$κ$ dielectrics
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Lee, KY; Lee, WC; Huang, ML; Chang, CH; Lee, YJ; Chiu, YK; Wu, TB; Hong, M; Kwo, R; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:11Z |
InGaAs n-MOS devices integrated using ALD-HfO2/metal gate without surface cleaning and interfacial layer passivation
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Chang, YC; Huang, ML; Lee, YJ; Lee, KY; Lin, TD; Hong, M; Kwo, J; Liao, CC; Cheng, KY; Lay, TS; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:16Z |
Energy-band parameters of atomic-layer-deposition Al̃ 2Õ 3/InGaAs heterostructure
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Huang, ML; Chang, YC; Chang, CH; Lin, TD; Kwo, J; Wu, TB; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:15Z |
Molecular beam epitaxy grown template for subsequent atomic layer deposition of high k dielectrics
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Lee, KY; Lee, WC; Lee, YJ; Huang, ML; Chang, CH; Wu, TB; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:10Z |
III-V MOSFET's with Advanced High k Dielectrics
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Hong, Minghwei; Kwo, J Raynien; Chen, CP; Chang, YC; Huang, ML; Lin, CF; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T05:56:09Z |
Magnetic Properties of Co-doped HfO2
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Lee, WC; Huang, ML; Yang, ZK; Hong, M; Lee, SF; Goncharova, L; Gustafsson, T; Hang, MC; Soo, YL; others; MINGHWEI HONG; Chang, YS |
Showing items 31-55 of 78 (4 Page(s) Totally)
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