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機構 日期 題名 作者
臺大學術典藏 2018-09-10T14:56:28Z Single crystal Gd 2 O 3 epitaxially on GaAs (111) A Chiang, Tsung-Hung;Wu, Shao-Yun;Huang, Tsung-Shiew;Hsu, Chia-Hung;Kwo, Jueinai;Hong, Minghwei; Chiang, Tsung-Hung; Wu, Shao-Yun; Huang, Tsung-Shiew; Hsu, Chia-Hung; Kwo, Jueinai; Hong, Minghwei; MINGHWEI HONG
臺大學術典藏 2018-09-10T14:56:28Z Single crystal Gd 2 O 3 epitaxially on GaAs (111) A Chiang, Tsung-Hung;Wu, Shao-Yun;Huang, Tsung-Shiew;Hsu, Chia-Hung;Kwo, Jueinai;Hong, Minghwei; Chiang, Tsung-Hung; Wu, Shao-Yun; Huang, Tsung-Shiew; Hsu, Chia-Hung; Kwo, Jueinai; Hong, Minghwei; MINGHWEI HONG
臺大學術典藏 2018-09-10T09:46:44Z Surface Passivation of GaSb (100) Using Molecular Beam Epitaxy of Y2O3 and Atomic Layer Deposition of Al2O3: A Comparative Study others; MINGHWEI HONG; Chu, Rei-Lin;Hsueh, Wei-Jen;Chiang, Tsung-Hung;Lee, Wei-Chin;Lin, Hsiao-Yu;Lin, Tsung-Da;Brown, Gail J;Chyi, Jen-Inn;Huang, Tsung-Shiew;Pi, Tun-Wen;others; Chu, Rei-Lin; Hsueh, Wei-Jen; Chiang, Tsung-Hung; Lee, Wei-Chin; Lin, Hsiao-Yu; Lin, Tsung-Da; Brown, Gail J; Chyi, Jen-Inn; Huang, Tsung-Shiew; Pi, Tun-Wen
臺大學術典藏 2018-09-10T09:46:44Z Surface Passivation of GaSb (100) Using Molecular Beam Epitaxy of Y2O3 and Atomic Layer Deposition of Al2O3: A Comparative Study others; MINGHWEI HONG; Chu, Rei-Lin;Hsueh, Wei-Jen;Chiang, Tsung-Hung;Lee, Wei-Chin;Lin, Hsiao-Yu;Lin, Tsung-Da;Brown, Gail J;Chyi, Jen-Inn;Huang, Tsung-Shiew;Pi, Tun-Wen;others; Chu, Rei-Lin; Hsueh, Wei-Jen; Chiang, Tsung-Hung; Lee, Wei-Chin; Lin, Hsiao-Yu; Lin, Tsung-Da; Brown, Gail J; Chyi, Jen-Inn; Huang, Tsung-Shiew; Pi, Tun-Wen
臺大學術典藏 2018-09-10T09:46:43Z Phase Transformation of Molecular Beam Epitaxy-Grown Nanometer-Thick Gd2O3 and Y2O3 on GaN Chang, Wen-Hsin;Wu, Shao-Yun;Lee, Chih-Hsun;Lai, Te-Yang;Lee, Yi-Jun;Chang, Pen;Hsu, Chia-Hung;Huang, Tsung-Shiew;Kwo, J Raynien;Hong, Minghwei; Chang, Wen-Hsin; Wu, Shao-Yun; Lee, Chih-Hsun; Lai, Te-Yang; Lee, Yi-Jun; Chang, Pen; Hsu, Chia-Hung; Huang, Tsung-Shiew; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG
臺大學術典藏 2018-09-10T09:46:43Z Phase Transformation of Molecular Beam Epitaxy-Grown Nanometer-Thick Gd2O3 and Y2O3 on GaN Chang, Wen-Hsin;Wu, Shao-Yun;Lee, Chih-Hsun;Lai, Te-Yang;Lee, Yi-Jun;Chang, Pen;Hsu, Chia-Hung;Huang, Tsung-Shiew;Kwo, J Raynien;Hong, Minghwei; Chang, Wen-Hsin; Wu, Shao-Yun; Lee, Chih-Hsun; Lai, Te-Yang; Lee, Yi-Jun; Chang, Pen; Hsu, Chia-Hung; Huang, Tsung-Shiew; Kwo, J Raynien; Hong, Minghwei; MINGHWEI HONG
臺大學術典藏 2018-09-10T09:20:49Z 高介電閘極氧化層和金屬閘極於矽和三五半導體之研究 Kwo, Raynien; Hong, Minghwei; Huang, Tsung-Shiew; 吳彥達; Wu, Yan-Dar; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:40:09Z 利用高介電材料與三五族高電子遷移率通道材料之介面調變工程作為鈍化保護以實現超越矽互補式金氧半場效電晶體技術之研究 Huang, Tsung-Shiew; Hong, Mingwhei; Chang, Pen; Kwo, Jueinai; 張翔筆; Huang, Tsung-Shiew; Hong, Mingwhei; Chang, Pen; Kwo, Jueinai; 張翔筆; MINGHWEI HONG
臺大學術典藏 2018-09-10T08:40:09Z 利用高介電材料與三五族高電子遷移率通道材料之介面調變工程作為鈍化保護以實現超越矽互補式金氧半場效電晶體技術之研究 Huang, Tsung-Shiew; Hong, Mingwhei; Chang, Pen; Kwo, Jueinai; 張翔筆; Huang, Tsung-Shiew; Hong, Mingwhei; Chang, Pen; Kwo, Jueinai; 張翔筆; MINGHWEI HONG

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