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Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
國立交通大學 |
2019-04-02T05:57:57Z |
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
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Trinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K. |
國立交通大學 |
2014-12-08T15:06:33Z |
The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al(2)O(3)/n-In(0.53)Ga(0.47)As metal-oxide-semiconductor capacitor
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Trinh, H. D.; Chang, E. Y.; Wu, P. W.; Wong, Y. Y.; Chang, C. T.; Hsieh, Y. F.; Yu, C. C.; Nguyen, H. Q.; Lin, Y. C.; Lin, K. L.; Hudait, M. K. |
Showing items 1-2 of 2 (1 Page(s) Totally) 1 View [10|25|50] records per page
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