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| 國立交通大學 |
2019-04-02T05:58:51Z |
Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contents
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Wu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan |
| 國立交通大學 |
2014-12-08T15:29:44Z |
Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy
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Wong, Yuen-Yee; Chang, Edward Yi; Wu, Yue-Han; Hudait, Mantu K.; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Chou, Wu-Ching; Chen, Chiang-Yao; Maa, Jer-Shen; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:07:51Z |
The Roles of Threading Dislocations on Electrical Properties of AlGaN/GaN Heterostructure Grown by MBE
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Wong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Ku, Jui-Tai; Hudait, Mantu K.; Chou, Wu-Ching; Chen, Micheal; Lin, Kung-Liang |
| 國立交通大學 |
2014-12-08T15:07:38Z |
Study of the inversion behaviors of Al(2)O(3)/In(x)Ga(1-x)As metal-oxide-semiconductor capacitors with different In contents
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Wu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan |
Showing items 1-4 of 4 (1 Page(s) Totally)
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