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Showing items 11-35 of 55 (3 Page(s) Totally)
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| 國立成功大學 |
2008-06-16 |
Further investigation of a hydrogen-sensing Pd/GaAs heterostructure field-effect transistor (HFET)
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Hung, Ching-Wen; Tsai, Tsung-Han; Chen, Huey-Ing; Tsai, Yan-Ying; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2008-06-06 |
高性能化合物半導體式氫氣感測器之研製
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洪慶文; Hung, Ching-Wen |
| 國立成功大學 |
2008-06-06 |
高性能化合物半導體式氫氣感測器之研製
|
洪慶文; Hung, Ching-Wen |
| 國立成功大學 |
2008-06-05 |
Improved performance of non-annealed ohmic-recess metamorphic high electron mobility transistor
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Chen, Li-Yang; Cheng, Shiou-Ying; Chu, Kuei-Yi; Hung, Ching-Wen; Chen, Tzu-Pin; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2008-06-01 |
Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector
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Chen, Tzu-Pin; Chen, Wei-Hsin; Lee, Chi-Jhung; Chu, Kuei-Yi; Chen, Li-Yang; Hung, Ching-Wen; Tsai, Tsung-Han; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2008-06 |
Comprehensive study on hydrogen sensing properties of a Pd-AlGaN-based Schottky diode
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Tsai, Tsung-Han; Chen, Huey-Ing; Lin, Kun-Wei; Hung, Ching-Wen; Hsu, Chia-Hao; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-04 |
Influence of emitter-ledge thickness on the surface-recombination mechanism of InGaP/GaAs heterojunction bipolar transistor
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Chu, Kuei-Yi; Cheng, Shiou-Ying; Chen, Tzu-Pin; Hung, Ching-Wen; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau; Chen, Lu-An |
| 國立成功大學 |
2008-04 |
Hydrogen sensing characteristics of a Pd/AlGaN/GaN Schottky diode
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Tsai, Tsung-Han; Chen, Huey-Ing; Lin, Kun-Wei; Hung, Ching-Wen; Hsu, Chia-Hao; Chen, Tzu-Pin; Chen, Li-Yang; Chu, Kuei-Yi; Chang, Chung-Fu; Liu, Wen-Chau |
| 國立成功大學 |
2008-04 |
On the hydrogen sensing behaviors of an InAlAs-based Schottky diode with a thin Pt catalytic metal
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Yen, Chih-Hung; Hung, Ching-Wen; Chen, Huey-Ing; Tsai, Tsung-Han; Chen, Tzu-Pin; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-03 |
Comparative study on temperature-dependent characteristics of InP/InGaAs single- and double-heterojunction bipolar transistors
|
Chen, Wei-Hsin; Chen, Tzu-Pin; Lee, Chi-Jhung; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2008-02 |
Investigation on heterostructural optoelectronic switches
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Guo, Der-Feng; Tsai, Jung-Hui; Weng, Tzu-Yen; Yeng, Chih-Hung; Lai, Po-Hsien; Fu, Ssu-Yi; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2008-01-15 |
Temperature-dependent hydrogen sensing characteristics of a new Pt/InAlAs Schottky diode-type sensor
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Hung, Ching-Wen; Tsai, Tsung-Han; Chen, Huey-Ing; Tsai, Yan-Ying; Chen, Tzu-Pin; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-01 |
A new InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure
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Chen, Tzu-Pin; Cheng, Shiou-Ying; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2008 |
Characteristics of an InP/InGaAs double heterojunction bipolar transistor with an InAlGaAs/InP composite collector structure
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Chen, Tzu-Pin; Cheng, Shiou-Ying; Chen, Wei-Hsin; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2008 |
Hydrogen-induced effect on device performance of a Pd/GaAs-based heterostructure field-effect transistor
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Hung, Ching-Wen; Chen, Huey-Ing; Tsai, Tsung-Han; Chang, Chung-Fu; Chen, Tzu-Pin; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008 |
Effect of nonannealed ohmic-recess structure on temperature-dependent characteristics of metamorphic high-electron-mobility transistors
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Chen, Li-Yang; Cheng, Shiou-Ying; Chu, Kuei-Yi; Tsai, Tsung-Han; Chen, Tzu-Pin; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2007-12 |
A hydrogen sensor based on InAlAs material with Pt catalytic thin film
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Hung, Ching-Wen; Tsai, Tsung-Han; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007-07-16 |
On the hydrogen sensing properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambiance
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Hung, Ching-Wen; Lin, Kun-Wei; Liu, Rong-Chau; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Su-I; Chen, Tzu-Pin; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-06-26 |
Comprehensive investigation of hydrogen-sensing properties of Pt/InAIP-based Schottky diodes
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Tsai, Yan-Ying; Hung, Ching-Wen; Fu, Ssu-I; Lai, Po-Hsien; Chang, Hung-Chi; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-06-26 |
Three-terminal-controlled field-effect resistive hydrogen sensor
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Hung, Ching-Wen; Lin, Kun-Wei; Chang, Hung-Chi; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I.; Chen, Tzu-Pin; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-06-18 |
Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistor
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Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hung, Ching-Wen; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
Comprehensive investigation on emitter ledge length of InGaP/GaAs heterojunction bipolar transistors
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Fu, Ssu-I; Liu, Rong-Chau; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
On the temperature-dependent characteristics of metamorphic heterostructure field-effect transistors with different Schottky gate metals
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Lai, Po-Hsien; Fu, SSu-I; Hung, Ching-Wen; Tsai, Yan-Ying; Chen, Tzu-Pin; Chen, Chun-Wei; Huang, Yi-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
Study of a new field-effect resistive hydrogen sensor based on a Pd/oxide/AlGaAs transistor
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Hung, Ching-Wen; Chang, Hung-Chi; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, SSu-I; Chen, Tzu-Pin; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-03-08 |
Comprehensive study of a Pd-GaAs high electron mobility transistor (HEMT)-based hydrogen sensor
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Hung, Ching-Wen; Lin, Han-Lien; Chen, Huey-Ing; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chuang, Hung-Ming; Liu, Wen-Chau |
Showing items 11-35 of 55 (3 Page(s) Totally)
1 2 3 > >>
View [10|25|50] records per page
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