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Showing items 21-45 of 55 (3 Page(s) Totally)
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| 國立成功大學 |
2008-02 |
Investigation on heterostructural optoelectronic switches
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Guo, Der-Feng; Tsai, Jung-Hui; Weng, Tzu-Yen; Yeng, Chih-Hung; Lai, Po-Hsien; Fu, Ssu-Yi; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2008-01-15 |
Temperature-dependent hydrogen sensing characteristics of a new Pt/InAlAs Schottky diode-type sensor
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Hung, Ching-Wen; Tsai, Tsung-Han; Chen, Huey-Ing; Tsai, Yan-Ying; Chen, Tzu-Pin; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008-01 |
A new InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure
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Chen, Tzu-Pin; Cheng, Shiou-Ying; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2008 |
Characteristics of an InP/InGaAs double heterojunction bipolar transistor with an InAlGaAs/InP composite collector structure
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Chen, Tzu-Pin; Cheng, Shiou-Ying; Chen, Wei-Hsin; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Tsai, Tsung-Han; Liu, Wen-Chau |
| 國立成功大學 |
2008 |
Hydrogen-induced effect on device performance of a Pd/GaAs-based heterostructure field-effect transistor
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Hung, Ching-Wen; Chen, Huey-Ing; Tsai, Tsung-Han; Chang, Chung-Fu; Chen, Tzu-Pin; Chen, Li-Yang; Chu, Kuei-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2008 |
Effect of nonannealed ohmic-recess structure on temperature-dependent characteristics of metamorphic high-electron-mobility transistors
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Chen, Li-Yang; Cheng, Shiou-Ying; Chu, Kuei-Yi; Tsai, Tsung-Han; Chen, Tzu-Pin; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2007-12 |
A hydrogen sensor based on InAlAs material with Pt catalytic thin film
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Hung, Ching-Wen; Tsai, Tsung-Han; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007-07-16 |
On the hydrogen sensing properties of a Pd/GaAs transistor-type gas sensor in a nitrogen ambiance
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Hung, Ching-Wen; Lin, Kun-Wei; Liu, Rong-Chau; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Su-I; Chen, Tzu-Pin; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-06-26 |
Comprehensive investigation of hydrogen-sensing properties of Pt/InAIP-based Schottky diodes
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Tsai, Yan-Ying; Hung, Ching-Wen; Fu, Ssu-I; Lai, Po-Hsien; Chang, Hung-Chi; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-06-26 |
Three-terminal-controlled field-effect resistive hydrogen sensor
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Hung, Ching-Wen; Lin, Kun-Wei; Chang, Hung-Chi; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I.; Chen, Tzu-Pin; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-06-18 |
Comprehensive analysis of hydrogen sensing properties of a Pd-gate metal-semiconductor high electron mobility transistor
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Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hung, Ching-Wen; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
Comprehensive investigation on emitter ledge length of InGaP/GaAs heterojunction bipolar transistors
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Fu, Ssu-I; Liu, Rong-Chau; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
On the temperature-dependent characteristics of metamorphic heterostructure field-effect transistors with different Schottky gate metals
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Lai, Po-Hsien; Fu, SSu-I; Hung, Ching-Wen; Tsai, Yan-Ying; Chen, Tzu-Pin; Chen, Chun-Wei; Huang, Yi-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2007-05 |
Study of a new field-effect resistive hydrogen sensor based on a Pd/oxide/AlGaAs transistor
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Hung, Ching-Wen; Chang, Hung-Chi; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, SSu-I; Chen, Tzu-Pin; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-03-08 |
Comprehensive study of a Pd-GaAs high electron mobility transistor (HEMT)-based hydrogen sensor
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Hung, Ching-Wen; Lin, Han-Lien; Chen, Huey-Ing; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2007-01 |
On the emitter ledge length effect for InGaP/GaAs heterojunction bipolar transistors
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Fu, Ssu-I; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Liu, Wen-Chau |
| 東吳大學 |
2007 |
郭芝苑臺語獨唱歌曲的研究
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洪靜彣; Hung, Ching-wen |
| 國立成功大學 |
2007 |
A hydrogen gas sensitive Pt-In0.5Al0.5P metal-semiconductor schottky diode
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Tsai, Yan-Ying; Chen, Huey-Ing; Hung, Ching-Wen; Chen, Tzu-Pin; Tsai, Tsung-Han; Chu, Kuei-Yi; Chen, Li-Yang; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
On the temperature-dependent electron impact ionizations in a step-graded InAlGaAs/InP collector double heterojunction bipolar transistor
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Chen, Tzu-Pin; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Tsai, Tsung-Han; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Comprehensive study of thermal stability performance of metamorphic heterostructure field-effect transistors with Ti/Au and Au metal gates
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Lai, Po-Hsien; Liu, Rong-Chau; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Chen, Tzu-Pin; Chen, Chun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Effect of formal passivations on temperature-dependent characteristics of high electron mobility transistors
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Lai, Po-Hsien; Liu, Rong-Chau; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Chen, Tzu-Pin; Liu, Wen-Chau |
| 國立成功大學 |
2007 |
Influence of emitter-edge-thinning thickness on the heterojunction bipolar transistor performance
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Fu, Ssu-I; Chen, Tzu-Pin; Liu, Rong-Chau; Cheng, Shiou-Ying; Lai, Po-Hsien; Tsai, Yan-Ying; Hung, Ching-Wen; Liu, Wen-Chau |
| 國立成功大學 |
2006-12-25 |
Temperature effect on impact ionization characteristics in metamorphic high electron mobility transistors
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Lai, Po-Hsien; Fu, Ssu-I; Hung, Ching-Wen; Tsai, Yan-Ying; Chen, Tzu-Pin; Chen, Chun-Wei; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
Further suppression of surface-recombination of an InGaP/GaAs HBT by conformal passivation
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Fu, Ssu-I; Cheng, Shiou-Ying; Chen, Tzu-Pin; Lai, Po-Hsien; Hung, Ching-Wen; Chu, Kuei-Yi; Chen, Li-Yang; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
A novel Pt/In0.52Al0.48As Schottky diode-type hydrogen sensor
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Hung, Ching-Wen; Lin, Han-Lien; Chen, Huey-Ing; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Liu, Wen-Chau |
Showing items 21-45 of 55 (3 Page(s) Totally)
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