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Showing items 1-10 of 10 (1 Page(s) Totally)
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| 元智大學 |
Jan-19 |
The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor deposition
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李清庭; Ha, Minh Thien Huu; Huynh, Sa Hoang; Do, Huy Binh; Luc, Quang Ho; Chang, Edward Yi |
| 國立交通大學 |
2019-04-03T06:43:48Z |
Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices
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Do, Huy Binh; Luc, Quang Ho; Ha, Minh Thien Huu; Huynh, Sa Hoang; Nguyen, Tuan Anh; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:23Z |
The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor deposition
|
Ha, Minh Thien Huu; Huynh, Sa Hoang; Do, Huy Binh; Lee, Ching Ting; Luc, Quang Ho; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:54:15Z |
Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal-oxide-semiconductor applications
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Huynh, Sa Hoang; Ha, Minh Thien Huu; Do, Huy Binh; Nguyen, Tuan Anh; Yu, Hung Wei; Luc, Quang Ho; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:24Z |
In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
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Luc, Quang Ho; Yang, Kun Sheng; Lin, Jia Wei; Chang, Chia Chi; Huy Binh Do; Huynh, Sa Hoang; Minh Thien Huu Ha; Tuan Anh Nguyen; Lin, Yueh Chin; Hu, Chenming; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:10Z |
Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate
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Yu, Hung Wei; Anandan, Deepak; Hsu, Ching Yi; Hung, Yu Chih; Su, Chun Jung; Wu, Chien Ting; Kakkerla, Ramesh Kumar; Minh Thien Huu Ha; Huynh, Sa Hoang; Tu, Yung Yi; Chang, Edward Yi |
| 國立交通大學 |
2018-01-24T07:40:20Z |
使用有機化學氣相沉積系統以介面差排陣列磊晶成長三五族銻化物材料對互補式金屬氧化物半導體之應用
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黃沙皇; 張翼; Huynh, Sa Hoang; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:27Z |
Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47As
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Do, Huy Binh; Luc, Quang Ho; Ha, Minh Thien Huu; Huynh, Sa Hoang; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:21Z |
Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor deposition
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Huynh, Sa Hoang; Minh Thien Huu Ha; Huy Binh Do; Quang Ho Luc; Yu, Hung Wei; Chang, Edward Yi |
| 國立交通大學 |
2015-07-21T08:30:58Z |
Effect of V/III Ratios on Surface Morphology in a GaSb Thin Film Grown on GaAs Substrate by MOCVD
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Hsiao, Chih-Jen; Liu, Chun-Kuan; Huynh, Sa-Hoang; Minh, Thien-Huu Ha; Yu, Hung-Wei; Nguyen, Hong-Quan; Maa, Jer-Shen; Chang, Shoou-Jinn; Chang, Edward Yi |
Showing items 1-10 of 10 (1 Page(s) Totally)
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