| 國立交通大學 |
2019-04-02T05:59:29Z |
Asymmetric gate capacitance and dynamic characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants
|
Lee, Kuo-Fu; Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-12T02:31:23Z |
具立體通道之矽奈米級金氧半場效應電晶體本質參數擾動之研究
|
黃至鴻; Hwang, Chih-Hong; 李義明; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:48:22Z |
Asymmetric Gate Capacitance and High Frequency Characteristic Fluctuations in 16 nm Bulk MOSFETs Due to Random Distribution of Discrete Dopants
|
Li, Yiming; Hwang, Chih-Hong; Yeh, Ta-Ching |
| 國立交通大學 |
2014-12-08T15:43:49Z |
Discrete-dopant-fluctuated threshold voltage roll-off in sub-16 nm bulk fin-type field effect transistors
|
Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:43:31Z |
Large-scale "atomistic" approach to discrete-dopant-induced characteristic fluctuations in silicon nanowire transistors
|
Li, Yiming; Hwang, Chih-Hong; Huang, Hsuan-Ming |
| 國立交通大學 |
2014-12-08T15:40:40Z |
Discrete-Dopant-Fluctuated Transient Behavior and Variability Suppression in 16-nm-Gate Complementary Metal-Oxide-Semiconductor Field-Effect Transistors
|
Li, Yiming; Hwang, Chih-Hong; Cheng, Hui-Wen |
| 國立交通大學 |
2014-12-08T15:28:22Z |
Temperature dependence on the contact size of GeSbTe films for phase change memories
|
Li, Yiming; Yu, Shao-Ming; Hwang, Chih-Hong; Kuo, Yi-Ting |
| 國立交通大學 |
2014-12-08T15:25:39Z |
Statistical Analysis of Metal Gate Workfunction Variability, Process Variation, and Random Dopant Fluctuation in Nano-CMOS Circuits
|
Hwang, Chih-Hong; Li, Tien-Yeh; Han, Ming-Hung; Lee, Kuo-Fu; Cheng, Hui-Wen; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:24:49Z |
Process-Variation- and Random-Dopant-Induced Static Noise Margin Fluctuation in Nanoscale CMOS and FinFET SRAM Cells
|
Li, Tien-Yeh; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:24:48Z |
Propagation Delay Dependence on Channel Fins and Geometry Aspect Ratio of 16-nm Multi-Gate MOSFET Inverter
|
Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:24:03Z |
Electrical Characteristics of Nanoscale Multi-Fin Field Effect Transistors with Different Fin Aspect Ratio
|
Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:24:02Z |
Process- and Random-Dopant-Induced Characteristic Variability of SRAM with nano-CMOS and Bulk FinFET Devices
|
Li, Tien-Yeh; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:24:02Z |
Characteristics Variability of Novel Lateral Asymmetry Nano-MOSFETs due to Random Discrete Dopant
|
Lee, Kou-Fu; Hwang, Chih-Hong; Li, Tien-Yeh; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:23:44Z |
Effect of Flash Lamp Annealing and Laser Spike Annealing on Random Dopant Fluctuation of 15-nm Metal-Oxide-Semiconductor Devices
|
Cheng, Hui-Wen; Hwang, Chih-Hong; Chao, Ko-An; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:22:31Z |
Effect of Process Variation on 15-nm-Gate Stacked Multichannel Surrounding-Gate Field Effect Transistor
|
Han, Ming-Hung; Cheng, Hui-Wen; Hwang, Chih-Hong; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:18:51Z |
Large-Scale Atomistic Circuit-Device Coupled Simulation of Discrete-Dopant-Induced Characteristic Fluctuation in Nano-CMOS Digital Circuits
|
Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:17:22Z |
Process-variation- and random-dopants-induced threshold voltage fluctuations in nanoscale planar MOSFET and bulk FinFET devices
|
Li, Yiming; Hwang, Chih-Hong; Cheng, Hui-Wen |
| 國立交通大學 |
2014-12-08T15:15:13Z |
Discrete Dopant Induced Characteristic Fluctuations in 16nm Multiple-Gate SOI Devices
|
Li, Yiming; Hwang, Chih-Hong; Huang, Hsuan-Ming; Yeh, Ta-Ching |
| 國立交通大學 |
2014-12-08T15:13:32Z |
The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit
|
Han, Ming-Hung; Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:13:30Z |
Discrete Dopant Induced Electrical and Thermal Fluctuation in Nanoscale SOI FinFET
|
Li, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming |
| 國立交通大學 |
2014-12-08T15:13:29Z |
Effect of Single Grain Boundary Position on Surrounding-Gate Polysilicon Thin Film Transistors
|
Li, Yiming; Huang, Jung Y.; Lee, Bo-Shian; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:13:15Z |
Discrete-dopant-induced characteristic fluctuations in 16 nm multiple-gate silicon-on-insulator devices
|
Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:13:07Z |
Statistical variability in FinFET devices with intrinsic parameter fluctuations
|
Hwang, Chih-Hong; Li, Yiming; Han, Ming-Hung |
| 國立交通大學 |
2014-12-08T15:13:01Z |
Effect of fin angle on electrical characteristics of nanoscale round-top-gate bulk FinFETs
|
Li, Yiming; Hwang, Chih-Hong |
| 國立交通大學 |
2014-12-08T15:11:11Z |
Numerical simulation of nanoscale multiple-gate devices including random impurity effect
|
Hwang, Chih-Hong; Li, Yiming |
