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Showing items 31-44 of 44  (2 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:09:07Z The geometric effect and programming current reduction in cylindrical-shaped phase change memory Li, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh; Cheng, Hui-Wen
國立交通大學 2014-12-08T15:09:00Z Random-Dopant-Induced Variability in Nano-CMOS Devices and Digital Circuits Li, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh
國立交通大學 2014-12-08T15:08:49Z The effect of the geometry aspect ratio on the silicon ellipse-shaped surrounding-gate field-effect transistor and circuit Li, Yiming; Hwang, Chih-Hong
國立交通大學 2014-12-08T15:08:40Z Doping profile and Ge-dose optimization for silicon-germanium heterojunction bipolar transistors Li, Yiming; Chen, Ying-Chieh; Hwang, Chih-Hong
國立交通大學 2014-12-08T15:08:33Z Characteristic fluctuation dependence on discrete dopant for 16nm SOI FinFETs at different temperature Li, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming; Huang, Hsuan-Ming; Yeh, Ta-Ching; Cheng, Hui-Wen; Chen, Hung-Ming; Hwang, Jiunn-Ren; Yang, Fu-Liang
國立交通大學 2014-12-08T15:07:40Z Discrete-Dopant-Induced Power-Delay Characteristic Fluctuation in 16 nm Complementary Metal-Oxide-Semiconductor with High Dielectric Constant Material Han, Ming-Hung; Li, Yiming; Hwang, Chih-Hong
國立交通大學 2014-12-08T15:07:35Z Effect of UV illumination on inverted-staggered a-Si : H thin film transistors Li, Yiming; Lou, Jen-Chung; Chen, Chung-Le; Hwang, Chih-Hong; Yan, Shuoting
國立交通大學 2014-12-08T15:07:27Z Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies Li, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh; Han, Ming-Hung
國立交通大學 2014-12-08T15:07:15Z Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuations Li, Yiming; Hwang, Chih-Hong; Han, Ming-Hung
國立交通大學 2014-12-08T15:07:07Z Asymmetric gate capacitance and dynamic characteristic fluctuations in 16 nm bulk MOSFETs due to random distribution of discrete dopants Lee, Kuo-Fu; Li, Yiming; Hwang, Chih-Hong
國立交通大學 2014-12-08T15:07:06Z Numerical simulation of static noise margin for a six-transistor static random access memory cell with 32nm fin-typed field effect transistors Li, Yiming; Hwang, Chih-Hong; Yu, Shao-Ming
國立交通大學 2014-12-08T15:02:42Z Reduction of Discrete-Dopant-Induced High-Frequency Characteristic Fluctuations in Nanoscale CMOS Circuit Li, Yiming; Hwang, Chih-Hong; Yeh, Ta-Ching; Huang, Hsuan-Ming; Li, Tien-Yeh; Cheng, Hui-Wen
國立交通大學 2014-12-08T15:02:21Z Comprehensive Examination of Threshold Voltage Fluctuations in Nanoscale Planar MOSFET and Bulk FinFET Devices Hwang, Chih-Hong; Cheng, Hui-Wen; Yeh, Ta-Ching; Li, Tien-Yeh; Huang, Hsuan-Ming; Li, Yiming
國立交通大學 2014-12-08T15:01:46Z Three-Dimensional Numerical Simulation of Switching Dynamics for Cylindrical-Shaped Phase Change Memory Li, Yiming; Hwang, Chih-Hong; Kuo, Yi-Ting; Cheng, Hui-Wen

Showing items 31-44 of 44  (2 Page(s) Totally)
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