臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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Institution	Date	Title	Author
大葉大學	2008-04	A high rectification-ratio nano-crystalline p-n junction diode prepared by metal-induced lateral crystallization for solar cell applications	Hwang, Jun-Dar;Lee, K. S.
大葉大學	2005-01	A Novel Transparent Ohmic Contact of Indium Tin Oxide to N-Type GaN	Hwang, Jun-Dar;Yang, G.H.;Chang, W. T.;Lin, C.C.;Chuang, R.W.;Chang, S. J.
國立成功大學	2005-01	A novel transparent ohmic contact of indium tin oxide to n-type GaN	Hwang, Jun-Dar; Yang, Gow-Huei; Chang, Wen-Tse; Lin, C. C.; Chuang, R. W.; Chang, Shoou-Jinn
大葉大學	2007-09	Deep Ultraviolet-Assisted Photo-Electro-Chemical Wet Etching of N-Type GaN	HWANG, JUN-DAR;YANG, GWO-HUEI;XU, NAI-WEI;GUO, YOU-XIN;ZHANG, ZHENG-HONG;LI, RONG-YUAN;CHAN, CHIEN-MAO
大葉大學	2005-05	Dopant Effect on in-situ Doped Metal-Induced Lateral Crystallization of Amorphous Silicon Films	Hwang, Jun-Dar;Chang, Jyh-Yeu;Wu, Ching-Yuan
大葉大學	2007-06	Effect of Different Sputter Power on ITO/p-GaN and their Interface Investigation	Lan, C. H.;Chang, S. J.;Hwang, Jun-Dar;Lin, J. C.;Hwang, C. C.
大葉大學	2007-11	Effects of Hydrogenated-Amorphous-Silicon Layer on the Performance of SiGe Metal-Semiconductor-Metal Photodetectors	Hwang, Jun-Dar;Chen, Y.H.;Kun, C.Y.;Liu, J.C.
大葉大學	2006-12	Electrical properties of SiO2/n-GaN metal oxide semiconductor with Liquid-Phase-Deposition Oxide	Hwang, Jun-Dar;Lin, T. C.
大葉大學	2005-04	Enhancing P-Type Conductivity in Mg-Doped GaN Using Oxygen and Nitrogen Plasma Activation	Hwang, Jun-Dar;Lai, Zhca-Young;Wu, Ching-Yuan;Chang, Shoou-Jinn
國立成功大學	2005-04	Enhancing P-type conductivity in Mg-doped GaN using oxygen and nitrogen plasma activation	Hwang, Jun-Dar; Lai, Zhca-Yong; Wu, Ching-Yuan; Chang, Shoou-Jinn
大葉大學	2005-07	Gallium nitride photoconductive ultraviolet sensor with a sputtered transparent indium-tin-oxide ohmic contac	Hwang, Jun-Dar;Lin, C.C.
大葉大學	2005-02	GaN MOS Ultraviolet Photodetector with Liquid Phase Deposition (LPD) Oxide	Hwang, Jun-Dar
大葉大學	2007-09	High Photo-to-Dark Current Ratuo in SiGe/Si Schottky-Barrier Photodetector by using an a-Si:H Cap layer	Hwang, Jun-Dar;Chen, Y.H.;Kung, C.Y.;Liu, J.C.
國立成功大學	2000-01-06	Improvement of beta-SiC/Si pn diode high temperature characteristics with porous silicon layer	Hsieh, Wen-Tse; Fang, Yean-Kuen; Lee, William J.; Ho, Chi-Wei; Wu, Kuen-Hsien; Ho, Jyh-Jier; Hwang, Jun-Dar
大葉大學	2007-12	Improving the Performance of SiGe Meatl-Semiconductor-Metal Photodetectors by using an Amorphous Silicon Passivation Layer	Chen, Y.H.;Hwang, Jun-Dar;Kung, C.Y.;Chen, P.S.;Wei, C.S.;Wu, C.K.;Liu, J.C.
國立成功大學	2007-08	Indium-tin-oxide metal-insulator-semiconductor GaN ultraviolet photodetectors using liquid-phase-deposition oxide	Yang, Gow-Huei; Hwang, Jun-Dar; Lan, Chih-Hsueh; Chan, Chien-Mao; Chen, Hone-Zem; Chang, Shoou-Jinn
大葉大學	2007-11	Investigation of AlGaN MOS Diode Prepared by Liquid-Phase Deposition	Chang, S. J.;Lan, C. H.;Hwang, Jun-Dar;Lin, J.C.
大葉大學	2007-11	Investigation of the Si1-xGex/Si heterojunction Schottky-barrier diodes with various Si-cap layers	Chen, Y. H.;Hwang, Jun-Dar;Kung, C. Y.;Chang, W. T.;Liu, J. C.;Chen, P. S.
大葉大學	2007-11	Low Temperature Oxidation of SiGe by Liquid-Phase Deposition	Chen, Y. H.;Kung, C. Y.;Hwang, Jun-Dar;Lin, H. Y.;Chan, H. J.
大葉大學	2008-06	Low Temperature Oxidation of SiGe by Liquid-Phase Deposition	Cheng, Y. H.;Kung, C. Y.;Hwang, Jun-Dar;Lin, H. Y.;Chan, H. J.;Chen, P. S.
大葉大學	2006-12	Metal-Induced Solar Cell Fabricated on Silicon Substrate	Hwang, Jun-Dar;Liu, Jun-Chin;Kung, Chung-Yuan
大葉大學	2005-01	Nano-structural silicon films prepared by metal-induced growth using RTCVD system	Hwang, Jun-Dar;Lin, Jyh-Wei
大葉大學	2005-10	Nitride-Based UV Metal-Insulator semiconductor Photodetector with Liquid-Phase-Deposition Oxide	Hwang, Jun-Dar;Yang, G.H.;Yang, Y.Y.;Yao, P.C.
國立成功大學	2006-02	Nonalloyed Ti/indium tin oxide and Ti ohmic contacts to n-type GaN using plasma pre-treatmentnn	Hwang, Jun-Dar; Yang, Gow-Huei; Lin, C. C.; Chang, Shoou-Jinn
大葉大學	2005-10	Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si0.8Ge0.2	Hwang, Jun-Dar;Chang, W.T.;Hseih, K.H.;Yang, G.H.;wu, C.Y.;Chen, P. S.

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