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Showing items 26-35 of 210 (21 Page(s) Totally)
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| 國立臺灣大學 |
2009 |
Trapping Characteristics of Al2O3/HfO2/SiO2 Stack Structure Prepared by Low Temperature In-situ Oxidation in dc-sputtering
|
Chang, Chia-Hua; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2009 |
Metal–Oxide–Semiconductor Structure Solar Cell Prepared by Low-Temperature (<400°C) Anodization Technique
|
Wang, Chih-Yao; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Effect of strain-temperature stress on MOS structure with ultra-thin gate oxide
|
Lin, Chia-Nan; Yang, Yi-Lin; Chen, Wei-Ting; Lin, Shang-Chih; Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Ultrathin Gate Oxides Prepared by Tensile-Stress Oxidation in Tilted Cathode Anodization System
|
Wang, Chih-Ching; Li, Tsung-Hung; Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Shallow level trap formation in SiO2 induced by high field and thermal stresses
|
Lin, Hao-Peng; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Lateral Nonuniformity Effects of Border Traps on the Characteristics of Metal–Oxide–Semiconductor Field-Effect Transistors Subjected to High-Field Stresses
|
Tseng, Jen-Chou; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2008 |
Silicon Oxide Gate Dielectric on N-Type 4H-SiC Prepared by Low Thermal Budget Anodization Method
|
Chuang, Kai-Chieh; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Effects of electrostatic discharge high-field current impulse on oxide breakdown
|
Tseng, Jen-Chou; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Low temperature (<400 ?C) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation
|
Chiang, Jung-Chin; Hwu, Jenn-Gwo |
| 國立臺灣大學 |
2007 |
Modeling and Characterization of Hydrogen Induced Charge Loss in Nitride Trapping Memory
|
Yang, Yi-Lin; Chang, Chia-Hua; Shih, Yen-Hao; Hsieh, Kuang-Yeu; Hwu, Jenn-Gwo |
Showing items 26-35 of 210 (21 Page(s) Totally)
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