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机构	日期	题名	作者
臺大學術典藏	2018-09-10T07:41:38Z	Floating-Body-Effect-Related Gate Tunneling Leakage Current Phenomenon of 40nm PD SOI NMOS Device	H. J. Hung;J. B. Kuo;C. T. Tsai;D. Chen; H. J. Hung; J. B. Kuo; C. T. Tsai; D. Chen; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:38Z	Floating-Body-Effect-Related Gate Tunneling Leakage Current Phenomenon of 40nm PD SOI NMOS Device	H. J. Hung;J. B. Kuo;C. T. Tsai;D. Chen; H. J. Hung; J. B. Kuo; C. T. Tsai; D. Chen; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:38Z	Low-Voltage CMOS VLSI Circuits	J. B. Kuo; J. H. Lou; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device	J. I. Lu;H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai; J. I. Lu; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Shallow Trench Isolated-Related Narrow Channel Effect on Kink Effect and Breakdown Behavior of 40nm PD SOI NMOS Device	J. I. Lu;H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh;C. T. Tsai; J. I. Lu; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; C. T. Tsai; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Floating-body-effect-related gate tunneling leakage current phenomenon of 40nm PD SOI NMOS device	H. J. Hung;J. I. Lu;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. I. Lu; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Floating-body-effect-related gate tunneling leakage current phenomenon of 40nm PD SOI NMOS device	H. J. Hung;J. I. Lu;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. I. Lu; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	0.5V SOI CMOS Dual-Threshold Circuit Technique Via DTMOS for Design Optimization of Low-Power VLSI System Applications	W. J. H. Lin;C. Y. Chien;J. B. Kuo; W. J. H. Lin; C. Y. Chien; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	0.5V SOI CMOS Dual-Threshold Circuit Technique Via DTMOS for Design Optimization of Low-Power VLSI System Applications	W. J. H. Lin;C. Y. Chien;J. B. Kuo; W. J. H. Lin; C. Y. Chien; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Design Optimization of Low-Power 90nm CMOS SOC Applications Using 0.5V Bulk PMOS Dynamic-Threshold with Dual Threshold (MTCMOS) BP-DTMOS-DT Technique	C. H. Lin;J. B. Kuo; C. H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Design Optimization of Low-Power 90nm CMOS SOC Applications Using 0.5V Bulk PMOS Dynamic-Threshold with Dual Threshold (MTCMOS) BP-DTMOS-DT Technique	C. H. Lin;J. B. Kuo; C. H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Modeling the Floating-Body-Effect-Induced Drain Current Behavior of PD SOI NMOS Device Via SPICE BJT/MOS Model Approach	J. S. Su;J. B. Kuo; J. S. Su; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Modeling the Floating-Body-Effect-Induced Drain Current Behavior of PD SOI NMOS Device Via SPICE BJT/MOS Model Approach	J. S. Su;J. B. Kuo; J. S. Su; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:37Z	Gate Tunneling Leakage Current Behavior of 40nm PD SOI NMOS Device Considerign the Floating Body Effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Temperature-Dependent Kink Effect Model for Partially-Depleted SOI NMOS Devices	S. C Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Bandgap Narrowing	J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Closed-Form Partitioned Gate Tunneling Current Model for NMOS Devices with an Ultra-thin Gate Oxide	C. H. Lin;J. B. Kuo; C. H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Closed-Form Partitioned Gate Tunneling Current Model for NMOS Devices with an Ultra-thin Gate Oxide	C. H. Lin;J. B. Kuo; C. H. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Compact MOS/Bipolar Charge-Control Model of Partially-Depleted SOI CMOS Devices for VLSI Circuit Simulation---SOI-Technology (ST)-SPICE	J. B. Kuo; K. W. Su; S. C. Lin; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	A Novel 0.7V Two-Port 6T SRAM Memory Cell Structure with Single-Bit-Line Simultaneous Read-and-Write Access (SBLSRWA) Capability using Partially Depleted SOI Dynamic-Threshold Technique	S. C. Liu; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:36Z	Semiconductor R&D in Taiwan	J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:35Z	A CMOS Semi-Static Latch Circuit without Charge Sharing and Leakage Current Problems	P. F. Lin; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:35Z	A Low-Voltage Semi-Dynamic DCVSPG-Domino Logic Circuit	J. H. Lou; J. B. Kuo; JAMES-B KUO
臺大學術典藏	2018-09-10T07:41:35Z	Modeling of Deep-Submicron SOI CMOS VLSI Devices	J. B. Kuo; JAMES-B KUO

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