臺大學術典藏 |
2018-09-10T04:35:18Z |
Novel Sub-1V CMOS Domino Dynamic Logic Circuit Using a Direct Bootstrap (DB) Technique for Low-voltage CMOS VLSI
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P. C. Chen; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T04:35:18Z |
A Novel 0.8V BP-DTMOS Content Addressable Memory Cell Circuit Derived from SOI-DTMOS Techniques
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E. Shen; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T04:35:18Z |
Analysis of Gate Misalignment Effect on the Threshold Voltage of Double-Gate (DG) Ultrathin FD SOI NMOS Devices Using a Compact Model Considering Fringing Electric Field Effect
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J. B. Kuo; E. C. Sun; M. T. Lin; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T04:15:06Z |
The Fringing Electric Field Effect on the Short-Channel Effect Threshold Voltage of FD SOI NMOS Devices with LDD/Sidewall Oxide Spacer Structure
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J. B. Kuo; S. C. Lin; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T04:15:06Z |
Fringing-Induced Barrier Lowering (FIBL) Effects of 100nm FD SOI NMOS Devices with High Permittivity Gate Dielectrics and LDD/Sidewall Oxide Spacer
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S. C. Lin; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T04:15:06Z |
Compact Breakdown Model for PD SOI NMOS Devices Considering BJT/MOS Impact Ionization for SPICE Circuits Simulation
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J. B. Kuo; S. C. Lin; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T04:15:06Z |
High-Temperature Quasi-Saturation Model of High-Voltage DMOS Power Devices
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C. L. Yang; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T04:15:05Z |
Sub-1V CMOS Large Capacitive-Load Driver Circuit Using Direct Bootstrap Technique for Low-Voltage CMOS VLSI
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P. C. Chen; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T04:15:05Z |
A 0.8-V 128-Kb Four-Way Set-Associative Two-Level CMOS Cache Memory Using Two-Stage Wordline/Bitline-Oriented Tag-Compare (WLOTC/BLOTC) Scheme
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P. F. Lin; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T03:50:15Z |
Novel 0.8V True-Single-Phase-Clocking (TSPC) Latches Using PD-SOI DTMOS Techniques for Low-Voltage CMOS VLSI Circuits
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J. B. Kuo; T. Y. Chiang; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T03:50:15Z |
Low-Voltage SOI CMOS VLSI Devices and Circuits
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J. B. Kuo; S. C. Lin; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T03:50:14Z |
A 1-V 128-kb four-way set-associative CMOS cache memory using wordline-oriented tag-compare (WLOTC) structure with the content-addressable-memory (CAM) 10-transistor tag cell
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P. F. Lin; J. B. Kuo; P. F. Lin; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T03:50:14Z |
A 1-V 128-kb four-way set-associative CMOS cache memory using wordline-oriented tag-compare (WLOTC) structure with the content-addressable-memory (CAM) 10-transistor tag cell
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P. F. Lin; J. B. Kuo; P. F. Lin; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T03:50:14Z |
A novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques
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S. C. Liu; J. B. Kuo; Frank Wu; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T03:50:14Z |
Modeling of Single-Transistor Latch Behavior in Partially-Depleted (PD) SOI CMOS Devices Using a Concise SOI-SPICE Model
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J. B. Kuo; S. C. Lin; JAMES-B KUO |
臺大學術典藏 |
2018-09-10T03:50:14Z |
Future Trends on SOI CMOS VLSI
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J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
2013-12 |
Turn-on Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect
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D. H. Lung;J. B. Kuo;D. Chen; D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO |
臺大學術典藏 |
2013-12 |
Turn-on Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect
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D. H. Lung;J. B. Kuo;D. Chen; D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO |
臺大學術典藏 |
2012-12 |
A Closed-form Analytical Transient Response Model for On-Chip Distortionless Interconnect
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T. C. Liu;J. B. Kuo;S. D. Zhang; T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO |
臺大學術典藏 |
2012-12 |
A Closed-form Analytical Transient Response Model for On-Chip Distortionless Interconnect
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T. C. Liu;J. B. Kuo;S. D. Zhang; T. C. Liu; J. B. Kuo; S. D. Zhang; JAMES-B KUO |
臺大學術典藏 |
2012-04 |
Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect
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C. H. Chen;J. B. Kuo;D. Chen;C. S. Yeh; C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO |
臺大學術典藏 |
2012-04 |
Function of the parasitic bipolar transistor in the 40 nm PD SOI NMOS device considering the floating body effect
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C. H. Chen;J. B. Kuo;D. Chen;C. S. Yeh; C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO |
臺大學術典藏 |
2001-05 |
Low-Voltage Content Addressable Memory Cell with a Fast Tag-Compare Capability Using Partially-Depleted SOI CMOS Dynamic-Threshold Techniques
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JAMES-B KUO; S. C. Liu; J. B. Kuo |
臺大學術典藏 |
1999-05 |
A 1.5-V CMOS all-N-logic true-single-phase bootstrapped dynamic-logic circuit suitable for low supply voltage and high-speed pipelined system operation
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J. H. Lou; J. B. Kuo; JAMES-B KUO |
臺大學術典藏 |
0-01 |
A High-Speed 1.5V Clocked BiCMOS Latch for BiCMOS Dynamic Pipelined Digital Logic VLSI Systems
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J. B. Kuo;J. H. Lou; J. B. Kuo; J. H. Lou; JAMES-B KUO |
臺大學術典藏 |
0-01 |
A High-Speed 1.5V Clocked BiCMOS Latch for BiCMOS Dynamic Pipelined Digital Logic VLSI Systems
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J. B. Kuo;J. H. Lou; J. B. Kuo; J. H. Lou; JAMES-B KUO |