| 中原大學 |
2009-07 |
The Construction of an Ontology-Based Ubiquitous Learning Grid
|
C.-J. Liao;J.-C. Chou;J.-T. David Yang |
| 國立中山大學 |
2005-10 |
Effect of La3+-dopant on the characteristics of lead titanate sensing membrane for ion-sensitive field-effect transistor
|
S.S. Jan;Y.C. Chen;J.C. Chou |
| 國立中山大學 |
2005 |
Study on Light and Temperature Properties of AlN pH-ion-sensitive Field-effect Transistor Devices
|
J.L. Chiang; J.C. Chou; Y.C. Chen |
| 國立中山大學 |
2005 |
Effect of Mg2+-dopant on the Characteristics of Lead Titanate Sensing Membrane for Ion-sensitive Field-effect Transistors
|
S.S. Jan; Y.C. Chen; J.C. Chou |
| 國立中山大學 |
2004-01 |
Effect of Mg2+-dopant on the characteristics of lead titanate sensing membrane for ion-sensitive field-effect transistors
|
Y.C. Chen;S.S. Jan;J.C. Chou |
| 國立中山大學 |
2004 |
Temperature Effect on the Characteristics of Hydrogen Ion-Sensitive Field-Effect Transistors with Sol-Gel-Derived Lead Titanate Gates
|
Y.C. Chen; S.S. Jan; J.C. Chou |
| 國立中山大學 |
2003 |
Preparation and Properties of Hydrogen Ion-Sensitive Field Effect Transistors with Sol-Gel-Derived Mg-modified Lead Titanate Gate
|
S.S. Jan; Y.C. Chen; J.C. Chou; P.P. Jan; C.C. Cheng |
| 國立中山大學 |
2003 |
Drift and Hysteresis Effects on AlN/SiO2 Gate pH Ion-Sensitive Field-Effect Transistor
|
J.L. Chiang; J.C. Chou; Y.C. Chen; G.S. Liau; C.C. Cheng |
| 國立中山大學 |
2002-01 |
Photoelectric Characteristics of pH-ISFET Based on AlN/SiO2 Insulator Gate
|
Y.C. Chen;J.L. Chiang; J.C. Chou; C.C. Cheng |
| 國立中山大學 |
2002-01 |
Study on Separative Structure Extended Gate pH-Sensitive Field Effect Transistor Based on WO3 Thin Film
|
J.L. Chiang; J.C. Chou ; Y.C. Chen |
| 國立中山大學 |
2002 |
Sensitivity and Hysteresis Properties of a-WO3, Ta2O5, and a-Si:H Gate Ion-sensitive Field-effect Transistors
|
J.L. Chiang; J.C. Chou; Y.C. Chen |
| 國立中山大學 |
2002 |
Characteristics of the Hydrogen Ion-Sensitive Field-Effect Transistors with Sol-Gel-Derived Lead Titanate Gate
|
S.S. Jan; J.L. Chiang; Y.C. Chen; J.C. Chou; C.C. Cheng |
| 國立中山大學 |
2002 |
Temperature Effect on AlN/SiO2 Gate pH-ISFET Devices
|
J.L. Chiang; Y.C. Chen; J.C. Chou; C.C. Cheng |
| 國立中山大學 |
2002 |
Preparation and Properties of Lead Titanate Gate Ion-Sensitive Field-Effect Transistors by the Sol-Gel Method
|
S.S. Jan; Y.C. Chen; J.C. Chou; C.C. Cheng; C.T. Lu |
| 國立中山大學 |
2002 |
Nonideal Factors of Ion-Sensitive Field-Effect Transistors with Lead Titanate Gate
|
S.S. Jan; Y.C. Chen; J.C. Chou; C.C. Cheng; L.T. Lu |
| 國立中山大學 |
2001-01 |
Photoelectric Characteristics of pH-ISFET Based on AlN/SiO2 Insulator Gate
|
Y.C. Chen;J.L. Chiang;J.C. Chou;C.C. Cheng |
| 國立中山大學 |
2001-01 |
Study on Separative Structure Extended Gate pH-Sensitive Field Effect Transistor Based on WO3 Thin Film
|
J.L. Chiang;J.C. Chou;Y.C. Chen |
| 國立中山大學 |
2001 |
Simulation and Experimental Study of the pH Sensing Property for AlN Thin Films
|
J.L. Chiang; Y.C. Chen; J.C. Chou |
